BCL Technologies (United States)

We describe a method to produce GaN epitaxial layers in a single chamber where a low-temperature buffer layer is deposited using metalorganic vapor-phase epitaxy (MOVPE), followed by conventional hydride vapor-phase epitaxy (HVPE) of GaN at higher temperatures. While a typical 12μm sample is investigated here, the GaN film thickness can vary between 2 and 200μm, with HVPE growth rate ranging from 5 to 60μm∕h. Cross-sectional transmission-electron microscope images show a dense network of mixed dislocations, whose density is significantly reduced after 6μm to the high 107cm−2 range. 10 K photoluminescence shows bound exciton dominated emission associated with the A and B valence bands and phonon replicas. No yellow emission is observed. This versatile process can be extended to produce additional device layers by MOVPE.

We propose a generic multiple classifier system based solely on pairwise classifiers to classify web pages. Web page classification is getting huge attention now because of its use in enhancing the accuracy of search engines and in summarizing web content for small-screen handheld devices. We have used a Support Vector Machine (SVM) as our core pair-wise classifier. The proposed system has produced very encouraging results on the problem web page classification. The proposed solution is totally generic and should be applicable in solving a wide range of multiple class pattern recognition problems.KeywordsSupport Vector MachineHandwritten CharacterSupport Vector ClassifierMultiple Classifier SystemStructure Support Vector MachineThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.