Determination of the Relative Nitrogen Doping Level of Tantalum Nitride Resistor Film by Means of the Seebeck Effect
Summary Tantalum film reactively sputtered in nitrogen is extensively used as a thin film resistor material in film integrated circuits. The control of nitrogen content is very important, since the nitrogen content of the film determines the aging characteristics, anodizability, sheet resistance, and temperature coefficient of resistance (TCR) of the film. A suitable method of identifying the nitrogen doping level of film immediately after sputtering is highly desirable. This paper describes the design and use of a diagnostic instrument called the “Seebeck apparatus,” which has been developed for this purpose. The film parameter measured is the so-called “Seebeck ratio @,” a quantity directly related to the Seebeck coefficient of the material. The instrument is capable of making measurements on as-sputtered film deposited on high resistivity substrates. The measurement is contacting but nondestructive, fast, and simple. Determination of the Seebeck ratio of film can be reproducibly made in less than 1 min and the ratio is presented as a direct digital readout. Using the Seebeck apparatus, the relationship between the Seebeck ratio and the nitrogen concentration in reactively sputtered tantalum nitride films has been examined. The nitrogen doping level of the films was controlled by varying the partial pressure of nitrogen in the sputtering system. Other material properties, such as resistivity (p), TCR, and aging were concurrently .‘examined and correlated with the Seebeck ratio. The results show that the Seebeck ratio of tantalum nitride films is a very rapidly varying function of the nitrogen doping level in the range suitable for resistor fabrication. Because of this functjonal relationship, it has been found that a measurement of the Seebeck ratio provides a much more sensitive test of whether film is suitably doped than the joint measurements of p and TCR alone.
Read more