Blendics (United States)

System-on-a-chip designs typically employ multiple clock domains to interface several externally clocked circuits operating at different frequencies and to reduce power and area by breaking large clock trees into multiple small ones. The principal challenge of such globally asynchronous locally synchronous architectures is the need to reliably communicate between the different clock domains. To achieve high reliability margins in high-frequency designs implemented in modern process technologies, multistage synchronizers are often used. In this paper, we develop analytical formulas to calculate the probability of failure and the number of stages to use in such synchronizers. We compare our model with those reported in previous publications and show that most existing models underestimate mean time between failures (MTBF). Our model calculates an MTBF lower bound with significantly smaller margins. The concept of an effective resolution time constant for multistage synchronizers is introduced and the important effects of clock duty cycle and process variability are addressed. These process variability effects can be minimized by use of simple design rules for the synchronizer. For safety-critical applications, calculation of the probability of a failure-free lifetime for all products in a production run is developed and a simple lower bound is derived.

Recent synchronizer metastability measurements indicate degradation of MTBF with technology scaling, calling for measurement and calibration circuits in 65nm and below. Degradation of parameters can be even worse if the system is operated at extreme supply voltages and temperature conditions. In this work we study the behavior of synchronizers in a broad range of supply voltage and temperature corners. A digital on-chip measurement system is presented that helps to characterize synchronizers in future technologies and a new calibrating system is shown that accounts for changes in delay values due to supply voltage and temperature changes. We present a detailed comparison of measurements and simulations for a fabricated 65nm bulk CMOS circuit and discuss implications of the measurements for synchronization systems in 65nm and beyond. We propose an adaptive self-calibrating synchronizer to account for supply voltage, temperature, global process variations and DVFS.