- Conference Article
1
- 10.1109/apec48139.2024.10509391
Embedded Gate Driver Transformers for use with Medium Voltage SiC MOSFETS
- Feb 25, 2024
- Jim Quilici + 1 more +1
Silicon Carbide (SiC) MOSFET devices are emerging to address Medium Voltage (MV) Utility Applications, where voltages range from 5kV to 15kV [1]. SiC MOSFETS used in these applications can be exposed to peak stress voltages ranging from 5kV to 30kV and drive signals with edges switching at 10kV/μs. Using these devices requires an isolation barrier between the MOSFETS and control circuitry. This paper presents embedded magnetic transformers that address the isolation requirements. Both control and power transformers are designed to exhibit low inter-winding capacitance, while maintaining the clearance and creepage distance that meet IEC standards. In this digest, the transformer device characteristics are presented. The results of AC isolation testing are presented to validate the integrity of the insulating material. The proposed gate drive transformers are aimed at providing a reliable and cost efficient means for implementing power systems using MV SiC MOSFETs
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