Dalsa Corporation

Photon-to-digital converter (PDC) detectors are versatile photodetector arrays based on singlephoton avalanche diode (SPAD). They are adaptable to multiple applications, like medical imaging, high-energy physics experiments and lidar, among others. Renowned for their high sensitivity and subnanosecond timing resolution performance, they are suitable for large-scale, low-cost detection infrastructures where the compactness of their data readout can be leveraged. The development of 3D vertically integrated PDC (3D PDC) is ongoing for some years at Universite de Sherbrooke. With its custom <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$64 \times 64$</tex> SPAD array technology, leveraging Teledyne Dalsa's MEMS and CCD capabilities for deep trench isolation and high optical performance, coupled with CMOS electronics readout integrated circuit design (TSMC CMOS 180 nm), the 3D PDCs are designed using standardized industrial foundries processes for large-scale manufacturing capability. Two 3D PDC production lots have been completed since October 2024. We report on performance assessment at die level and wafer level.

This study presents the development and optimization of AlN-based optical waveguides and photonic devices for 1.55 μm applications, utilizing a CMOS-compatible sputtered thin film technology. The fabrication employs a two-step photoresist technique to fabricate AlN core waveguides with low propagation losses and other optical devices, such as a 1×2 multimode interference (MMI) coupler, Mach-Zehnder interferometers and ring resonators. The results of this study highlight the potential for efficient and cost-effective fabrication of AlN-based integrated optical circuits and pave the way for further research and development in the field of integrated optics.

O objetivo deste artigo é, a partir da filosofia de Deleuze, discutir em que medida a Estética surgiu como um problema para a filosofia, fazendo com que o pensamento fosse forçado a enfrentar a dimensão da obscuridade. A hipótese a ser seguida é a de que o pensamento foi desobrigado do compromisso com uma razão clara e distinta, com uma noção de ideia exclusivamente racional que sempre deixou o sensível e os corpos do lado de fora. Elencarei um conjunto de teses voltadas para a relação entre arte e pensamento, em Deleuze, conjunto ao qual pretendo guiar de acordo com a seguinte leitura: dentro da inegável reviravolta que Diferença e repetição provocou na tradição filosófica em geral, a reunião paradoxal entre sensibilidade e pensamento é uma das principais contribuições do pensamento de Deleuze para a Estética.

Background and aim.Vaccinations have dramatically impacted on the ongoing pandemic of COVID-19, the disease caused by severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). As morbid obese (MO) individuals are at high risk for severe complications, their acceptance of SARS-CoV-2 vaccines is of certain public health interest.Methods.We investigated the knowledge, attitudes and eventual acceptance of SARS-CoV-2/COVID-19 vaccination among MO individuals either in waiting list, or recipients of bariatric surgery from a reference center (Parma University Hospital) shortly before the inception of the Italian mass vaccination campaign (March 2021). Data were collected through a web-based questionnaire. Association of individual factors with acceptance of SARS-CoV-2 vaccine was assessed by means of a logistic regression analysis with eventual calculation of adjusted Odds Ratios (aOR) and corresponding 95% Confidence Intervals (95%CI).Results.Adequate, general knowledge of SARS-CoV-2/COVID-19 was found in the majority of MO patients. High perception of SARS-CoV-2 risk was found in around 80% of participants (79.2% regarding its occurrence, 73.6% regarding its potential severity). Acceptance of SARS-CoV-2/COVID-19 vaccination was reported by 65.3% of participants, and was more likely endorsed by MO patients who were likely to accept some sort of payment/copayment (aOR 5.783; 1.426; 23.456), or who were more likely towards a vaccination mandate (aOR 7.920; 1.995; 31.444).Conclusions.Around one third of the MO individuals among potential recipient of bariatric surgery exhibited some significant hesitancy towards SARS-CoV-2 vaccine, and a rational approach may fail to capture and address specific barriers/motivators in this subset of individuals, stressing the importance for alternative interventions. (www.actabiomedica.it)

O presente ensaio traz um estudo sobre a origem e a importância do dia 08 de março, marco internacional de luta das mulheres trabalhadoras, sob a perspectiva de classe e de gênero. Com o objetivo de registrar elementos da ressignifi cação da data, este ensaio apresenta uma refl exão sobre a ação das mulheres, em especial das camponesas, através do Movimento de Mulheres Camponesas (MMC). Tal ressignifi cação apresenta o dia 08 de março como uma data de resistência, além da participação das mulheres camponesas nesse processo, a partir de propostas de mobilização construídas pelo MMC. A metodologia utilizada foi a de pesquisa participante, através dos instrumentos de observação, análise documental e bibliográfica, além da inserção e participação da autora no movimento.

ABSTRACT We have developed a high resolution amorphous selenium (a-Se) direct detection imager using a large-areacompatible back-end fabrication process on top of a CMOS active pixel sensor having 25 micron pixel pitch.Integration of a-Se with CMOS technology requires overcoming CMOS/a-Se interfacial strain, which initiatesnucleation of crystalline selenium and results in high detector dark currents. A CMOS-compatible polyimidebu er layer was used to planarize the backplane and provide a low stress and thermally stable surface for a-Se.The bu er layer inhibits crystallization and provides detector stability that is not only a performance factor butalso critical for favorable long term cost-bene t considerations in the application of CMOS digital x-ray imagersin medical practice. The detector structure is comprised of a polyimide (PI) bu er layer, the a-Se layer, and agold (Au) top electrode. The PI layer is applied by spin-coating and is patterned using dry etching to open thebackplane bond pads for wire bonding. Thermal evaporation is used to deposit the a-Se and Au layers, and thedetector is operated in hole collection mode (i.e. a positive bias on the Au top electrode).High resolution a-Se diagnostic systems typically use 70 to 100  m pixel pitch and have a pre-samplingmodulation transfer function (MTF) that is signi cantly limited by the pixel aperture. Our results con rm that,for a densely integrated 25  m pixel pitch CMOS array, the MTF approaches the fundamental material limit,i.e. where the MTF begins to be limited by the a-Se material properties and not the pixel aperture. Preliminaryimages demonstrating high spatial resolution have been obtained from a rst prototype imager.Keywords: x-ray imaging, high spatial resolution, amorphous selenium, CMOS, CMOS-selenium, array pro-cessing, direct conversion, at panel imaging

We developed a Time Delay Integration (TDI) CCD image sensor that consists of four multispectral bands (B1-B4 zone) and one panchromatic band (P zone) in an integrated, compact package. The B zones have a horizontal resolution of 3k columns, with a pixel size of 28 μm x 28 μm. The P zone has a horizontal resolution of 12k columns, with a pixel size of 7 μm x 7 μm. The large pixel size of B zones provides excellent colour differentiation even under extremely low light intensity, while the small pixel size and the large pixel number of broad band zone (P zone) provides high resolution images within a wide spectrum range. By utilizing a particularly designed hybrid optical filter, the sensor is able to collect blue, green, red, and near infrared images with only negligible optical crosstalk. The sensor uses selectable outputs and data rate: 2 or 1 outputs running at 16.5 MHz (B1-B4 Zone) per output, and 8 or 4 outputs running at 33 MHz (P Zone) per output. Special design features minimize optical crosstalk between the image zones, and achieve a low signal noise: ≤ 85 e- in B zone, and ≤ 35 e- in P zone. To acquire spectral reflectance signatures with good fidelity, the image sensor must be very sensitive to weak light in some spectral bands and cannot be over exposed to light in other spectral bands. To fulfil this requirement, the sensor is designed to show a balanced responsivity in all the image zones. Over all, the sensor demonstrates outstanding performance, providing exceptional images that are crucial for remote sensing applications.

Vertical silicon nanowire arrays of different diameters ranging from 90 nm to 190 nm with a pitch of 400 nm are fabricated. Nanowires are arranged in a square lattice and have a length of 1 μm. Polarization resolved reflectances from these nanowire arrays are measured and significant differences are observed for the reflectance characteristics of the s- and p-polarized beams. A narrow wavelength band of increased absorption is reported by analyzing the reflectance using the finite difference time domain method. The center wavelength of this band shifts toward higher wavelengths as the diameter of the nanowires increases achieving tunable absorption spectra within the nanowires. The wavelength band shifts at a rate of approximately 3.3 nm with every 1 nm increment in diameter. The increased absorption is achieved due to modal excitation and near-field coupling between the nanowires.

An interface has been developed to capture frames taken by X-ray array imagers up to 64×64 pixels. An application specific integrated circuit (ASIC) designed solely for X-ray flat panel imaging readout circuitry, manufactured by FLIR® called Indigo (also known as ISC9717), was used as part of charge-amplifier block. An Altera Cyclone II FPGA is used to serve three purposes: Create pulses required for gate-driver block, Receive fast-stream data coming from the Indigo chip, and Send data through RS-232 protocol over a serial cable to a personal computer. Initial results for a 32×32 passive pixel sensor (PPS) with lateral amorphous Selenium metal-semiconductor-metal (MSM) photodetector were presented in [1]. This work focuses more on methods used to improve the images obtained from the array. Sharper images produced in sync with the light source are presented. In addition, insight into array readout circuitry and capturing a frame from an array is discussed.

Ordered arrays of silicon nanowires were fabricated by etching, and their bunching characteristics were parametrically studied by varying the diameter, the length, and the pitch. The diameter to length ratio was found to be critical for the nanowires to stand vertically without bunching. For a length of 650 nm, 40 nm and larger diameter nanowires were vertical, whereas for a length of 400 nm, 34 nm and larger diameter nanowires were vertical. Further, the phase change between the bunching and vertical nature of nanowires happens abruptly and was verified by finite element modeling of the deflections of the nanowire tips for different diameters. The detailed experimental study provides guidelines for silicon nanowire arrays being considered for different applications including solar cells, optical waveguides, and sensors.