Dot Metrics Technologies (United States)

The degraded thermal path of 3-D integrated circuits (3DICs) makes thermal analysis at the chip-scale an essential part of the design process. Performing an appropriate thermal analysis on such circuits requires a model with junction-level fidelity; however, the computational burden imposed by such a model is tremendous. In this paper, we present enhancements to two thermal modeling techniques for integrated circuits to make them applicable to 3DICs. First, we present a resistive mesh-based approach that improves on the fidelity of prior approaches by constructing a thermal model of the full structure of 3DICs, including the interconnect. Second, we introduce a method for dividing the thermal response caused by a heat load into a high fidelity “near response” and a lower fidelity “far response” in order to implement Power Blurring high definition (HD), a hierarchical thermal simulation approach based on Power Blurring that incorporates the resistive mesh-based models and allows for junction-level accuracy at the full-chip scale. The Power Blurring HD technique yields approximately three orders of magnitude of improvement in memory usage and up to six orders of magnitude of improvement in runtime for a three-tier synthetic aperture radar circuit, as compared to using a full-chip junction-scale resistive mesh-based model. Finally, measurement results are presented showing that Power Blurring high definition (HD) accurately determines the shape of the thermal profile of the 3DIC surface after a correction factor is added to adjust for a discrepancy in the absolute temperature values.

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In this paper, we present a model that can be used to determine semiconductor material parameters for metal-semiconductor contacts with non-linear voltage-current (V-I) characteristics. The model uses the Circular Transmission Line Model (CTLM) approach to calculate sheet resistance (RSH) and resistivity (ρ) of Mg doped HVPE and MBE GaN epilayers giving values close to those achieved by Hall measurements.

Material structures on the nanoscale can enable enhancement of optoelectronic device performance. For example, in the InGaN active layers of MOCVD grown blue light emitting diodes, indium segregation plays a critical role in the interplay between blue luminescent channels and non-radiative recombination centers such as crystal defects. Unfortunately, high efficiency luminescence of InGaN does not extend into the “deep green” spectral region, around the wavelength of peak human eye response. We are investigating whether commercially available luminescent nanostructures such as CdSe quantum dots can be incorporated into III-nitride devices to extend their high-efficiency performance into the “deep green”. Surfactant stabilized CdSe particles in liquid dispersions are drop-cast onto HVPE grown GaN. Physical properties of resultant CdSe surface structures are examined. Luminescence is reported before and after subsequent growth of GaN. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)