Entegris (United States)

For multi-chip stacking using Chip-to-Wafer (C2W) Hybrid Bonding (HB) technique, one prominent approach is Inter-Die Gap Filling (IDGF) method. A major challenge in IDGF flow is achieving cost-effective, crack-free planarization of the dielectric fill. Ensuring crack-free planarization requires the dielectric thickness to match or exceed the silicon die thickness. Although thinner silicon dies can lower planarization time and costs, their fragile nature complicates handling during assembly. This study presents a novel non-standard silicon Chemical Mechanical Planarization (CMP) process for C2W hybrid-bonded wafers. The novel CMP process enables precise die thinning, significantly reducing dielectric planarization costs while mitigating thin-die handling challenges. Custom-designed slurry additives and polishing pads effectively minimize die-edge rounding and chipping. Process conditions, slurry composition and CMP pads-were optimized to achieve high silicon removal rates with enhanced surface integrity. This approach offers a scalable solution to improve manufacturing efficiency and reliability in advanced multi-chip integration.

The progression of transistor miniaturization with mass production at the 3nm process node, the risk of contamination in photochemicals photoresists, spin-on carbon (SOC), and spin-on glass (SOG) becomes increasingly significant, highlighting the essential role of contamination control systems such as filters (particles) and purifiers (organics, metals, etc.) in mitigating threats to electrical microstructures on semiconductor chips. Entegris has been at the forefront of developing advanced chemical integrity and performance tools to minimize wafer defects and enhance product yields. Due to their widespread application, ultrahigh molecular weight polyethylene (UPE) membranes have become vital at the point of use (POU) filtration. Their ability to eliminate typical sources of defectivity, such as particles and aggregates in photoresist materials, is a testament to their effectiveness. This has traditionally been achieved through sieving filtration, utilizing the tiny pores of UPE filters and their exceptional photochemical compatibility. Furthermore, for particles at the molecular level, adsorption filtration (non-sieving filtration) has grown to become instrumental in significantly reducing wafer defects. This paper introduces our latest innovative, dual-functional filtration technology for photoresist POU filtration, which provides superior performance with both sieving and non-sieving filtration mechanisms. In addition to its advanced filtration capabilities, the new dual-functional filter demonstrates higher cleanliness standards than its predecessors, resulting in a notable reduction in wafer defectivity.

The semiconductor industry is projected to grow at a compound annual growth rate (CAGR) of 12.28% from 2023 to 2032 which necessitates an enlarged workforce. In this paper, we present findings on strategies to attract the next generation of talent, with emphasis on increasing the participation of women within the semiconductor industry and opening the talent pipeline beyond electrical and computer engineering. Another key opportunity is for the industry to increase and highlight its contributions towards the common good-including social responsibility with an emphasis on environmental impact-to capture the interest of students.

The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T${}^\prime$ phase MoTe${}_2$ is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T${}^\prime$ MoTe${}_2$ using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C${}_4$H${}_9$)${}_2$Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T${}^\prime$ and 2H MoTe${}_2$ mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T${}^\prime$ MoTe${}_2$ films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T${}^\prime$ MoTe${}_2$/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T${}^\prime$ MoTe${}_2$ film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.

UV and visible photonics enable applications ranging from spectroscopic sensing to communication and quantum information processing. Photonics structures in these wavelength regimes, however, tend to experience higher loss than their IR counterpart. Particularly in the near-UV band, on-chip optical microresonators have not yet achieved a quality factor beyond 1 million. Here, we report ultra-low-loss photonic waveguides and resonators patterned from alumina thin films prepared by a highly scalable atomic layer deposition process. We demonstrate ultra high Q factor of 1.5×106 at 390 nm, a record value at UV bands, and 1.9×106 at 488.5 nm.

In this study, emissions of photoresist resin deposited on wafters in a FOUP are compared using impinger/GCMS at-line measurements and on-line Vocus AMC measurements based on chemical ionization mass spectrometry. While GCMS measurements are routinely used for VOC measurements, the Vocus AMC monitor allows simultaneous, real-time detection of acids, bases, and condensable organics, providing unique insights into the cleanroom and FOUP microenvironment Photoresist resin outgassing measurements show comparable absolute concentrations between the two methods (GCMS and CI-TOF) for targeted compounds in real world sampling scenarios. The rate of outgassing was tracked in real time with the Vocus and also allowed identification of unknown compounds emitted from the resin. Continuous monitoring of the cleanroom air around the FOUP highlights the importance of the cleanroom environment which can directly affect the FOUP microenvironment, and additionally we show that Entegris Barrier Material EBM can guarantee a good wafer protection.

- The locution ‘interaction’ could literally apply to several disparate of quite disparate social encounters. An adjacency pairs has the automatic sequences. At all times, they include of the first part and the second part, constructed by another speakers. An expectation of the utterance of a second part of the same pair is generated the utterance of the first part. The example of conversational turn-taking is an adjacency pair. This paper was in control of qualitative descriptive approach. This paper applied the theory of adjacency pairs to Jokowi’s interview with one of CNN host, Christiane Amanpour, on his first 100 days in office after elected as the seventh president of Indonesia. This paper describes about the definition of is the most commonly occurs. is the most commonly occurs. adjacency pairs, the characteristics of adjacency pairs, types of adjacency pairs and elements of adjacency pairs in conversational analysis. There are 44 adjacency pairs on this research. It was found six combinations of common adjacency pairs. The most common occurs was Question-Answer. It was caused by this is an interview where the interviewer offer some interrogation, judgement, and opinion then the interviewee respons all of them.Keywords: Adjacency pairs, Characteristics of adjacency pairs, Conversational analysis, Elements of adjacency pairs, Types of adjacency pairs.

Removing metallic contaminants from the photochemical supply chain is critical for the creation of high yielding, highly reliable semiconductors. Metallic contaminants may lead to various types of defects, such as cone defects, that can result in significant yield loss and degraded long-term reliability. This makes control of metallic contaminants even more critical in advanced photolithography processes, where the device reliability demands metal contaminants at parts per trillion (ppt) levels. Previous work3 demonstrated the ability of two purifiers, Purasol^TM SP and SN, to reduce the metal contaminants in a variety of organic solvents. In this paper we will discuss our continued work to reduce contamination sources that can contribute to defect formation in photolithography applications.