- Research Article
- 10.1109/tmtt.2026.3655337
Performance-Optimized Heterogeneously Integrated 0.15 <i>μ</i> m GaN Circulator and 45 nm RF SOI Voltage-Boosted Clock Generation IC
- Apr 01, 2026
- IEEE Transactions on Microwave Theory and Techniques
- Nishant Patil + 3 more +3
Advanced CMOS technology nodes face limitations in linearity due to their reduced breakdown voltages, whereas III–V semiconductors offer superior device performance but have limited BEOL and integration capabilities, making complex circuit design challenging. The precise and efficient integration of III–V MMICs with CMOS ICs enables leveraging the most suitable device for each function, thereby achieving enhanced dynamic range. However, this approach demands precise integration of the ICs with carefully controlled interconnects. This article presents the demonstration of a heterogeneously integrated GaN LPTV switched-transmission-line circulator combined with a CMOS SOI clock generation IC, harnessing the high integration density of CMOS alongside the superior switching characteristics of GaN. Measurement results demonstrate a dc transmission loss of 2.0dB and port-to-port isolation >17dB across a 3-dB bandwidth from dc to 3.35GHz. The circulator achieved IP1dB of 12.1dBm and IIP3 of 25.6dBm, attributed to voltage-boosted swings and precise, robust phase alignment from the CMOS SOI IC. Furthermore, the circulator and clock chip operate using only one single-phase external clock at 2.6GHz, simplifying system-level integration significantly compared to other solutions that require complex multiphase clock sources.
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