- Book Chapter
- 10.1017/cbo9781316488720.002
Introduction
- Sep 01, 2016
- Vanessa Wilcox
Publications from 2021 to 2026
Showing 5 of 5 papers
Introduction
Yangge Dance: the Rhythm of Liability for Medical Malpractice in the People’s Republic of China
In this article, Chinese
England and Wales
Proposal of a topological M(atrix) theory
Keeping in mind the several models of M(atrix) theory we attempt to understand the possible structure of the topological M(atrix) theory ``underlying'' these approaches. In particular we are motivated by the issue about the nature of the structure of the vacuum of the topological M(atrix) theory and how this could be related to the vacuum of the electroweak theory. In doing so we are led to a simple topological matrix model. Moreover it is intuitively expected from the current understanding that the noncommutative nature of ``spacetime'' and background independence should lead to a topological Model. The main purpose of this note is to propose a simple topological Matrix Model which bears relation to F and M theories. Suggestions on the origin of the chemical potential term appearing in the matrix models are given.
Read moreDifference in silicon photodiode response between collimated and divergent beams
A theoretical model, whose validity was confirmed experimentally, has been used to investigate the polarization properties of silicon photodiodes as functions of the angle of incidence with wavelengths ranging from 10 nm to 800 nm. From this, spectral differences in the responses of silicon photodiodes between a collimated beam and a beam with angle divergence are derived. The calculation shows that divergent beams (both isotropic and Gaussian beams) usually give lower responses than those for a collimated beam except in a limited spectral region (approximately 120 nm to 220 nm for a Si photodiode coated with a SiO2 layer of thickness 27 nm). The decrease in response of the Si photodiode with 27 nm SiO2 for the isotropic divergent beam with half apex angle of the beam cone of 60° reaches a maximum of 14 % at a wavelength of 44 nm and the increase reaches a maximum of 7.5 % at 163 nm. Similar results for a Si photodiode coated with an 8 nm oxide layer and a divergent beam with Gaussian angular distribution were also obtained.
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