Intevac (United States)

Die Einbindung von Freier Software in die betriebliche Leistungserstellung ist mit Chancen, Herausforderungen und Spannungsfeldern verbunden. Die Monetarisierung Freier Software weist spezifische Merkmale auf, welche zur erfolgreichen Konzipierung zu beachten sind. Am Beispiel des Konferenz- und Veranstaltungssystems OpenSlides der Intevation GmbH werden die Monetarisierungskonzepte drei tertiärer Wettbewerber auf Basis des Modells von Commercial Open Source Software analysiert, um ein personalisiertes Konzept für OpenSlides als Grundlage zur Preisermittlung zu schaffen. Dieses Konzept zur Preisermittlung berücksichtigt die typischerweise nicht direkt anzurechnenden Kosten der Entwicklung von Freier Software mittels einer iterativ gestalteten Entscheidungsmatrix. Das Konzept wird in einer theoretischen Testumgebung durchlaufen, um die Eignung zur Umsetzung in die Praxis zu validieren. Die Ergebnisse werden kritisch bewertet und kontextualisiert.

An overview of the Intensified Photodiode (IPD) is presented with an emphasis on IPDs optimized for use in the 950nm to 1350nm spectral range for single photon detection applications. The theory of operation of the IPD, two different electron optics designs, and device performance for a multichannel, 4x4 pixel array, low jitter IPD optimized for operation at 1060nm are presented in this paper. Key results include greater than 15% quantum efficiency, large active area, and less than 550ps impulse response.

The thickness of carbon overcoats has been reduced to 30 /spl Aring/ or less to achieve high areal density in magnetic media. Presently, technologies such as ion beam deposition and plasma enhanced chemical vapor deposition (PECVD) produce thin carbon overcoats with a high fraction of sp/sup 3/ bonding. These hard and dense overcoats exhibit good wear durability and corrosion resistance. This paper discusses processing, characterization, and tribological and corrosion performance of ultrathin overcoats (30 /spl Aring/ or less) produced by PECVD. The physical and chemical properties of the carbon overcoat affect the carbon-lubricant bonding, which subsequently determines the head-disk interaction. Since optimal properties of the carbon vary at the lubricant and magnetic layer interfaces, an interfacial functionality approach is needed for the design of thin overcoats. Functionalized carbon overcoat is a design that consists of a PECVD carbon layer with a sputtered functional layer on top. Characterization and tribological performance and comparison of functionalized carbon overcoat with PECVD carbon is also presented.

An ultra-low-noise, high-speed, hybrid photomultiplier tube sensitive from 900 to 1300 nm optical wavelength is described. The device, also known as an intensified photodiode (IPD), uses an active transferred electron (TE) photocathode with the quaternary In/sub .69/Ca/sub .31/As/sub .67/P/sub .33/ photo-absorbing layer and a GaAs Schottky avalanche photodiode (SAPD) anode. The detector has a combined electron bombarded and avalanche gain of over 15000 which is sufficient to overcome preamplifier noise and provide high internal counting efficiency of approximately 85%. At an active cathode bias of 1.5 V the room temperature cathode dark count rate is 6.67/spl times/10/sup 5//s. Cooling reduces this substantially corresponding to a dark current activation energy almost equal to the bandgap of the In/sub .69/Ca/sub .31/As/sub .67/P/sub .33/ layer.

Abstract In this work polysilicon TFI's were fabricated by excimer laser crystallization of active channel silicon which was deposited by three different methods: I) LPCVD at 550 °C; 2) PECVD at 225 °C; and 3) PVD at room temperature. CMOS devices were produced with the same low temperature (less than 600 °C) top gate process and the laser anneal condition was optimized for the material type and thickness. For PECVD material a pre-anneal step of 450 °C for 1 hour was required before crystallization to avoid bubbling and ablation due to hydrogen evolution, but no such anneal was required for either LPCVD or PVD material due to their low hydrogen and Ar content. For 50 nm films, laser energy densities were typically in the range of 300-400 miJ/cm2. Excellent device results were obtained for both LPCVD and PECVD material with n-channel field effect mobilities greater than 100 cm2/Vs and on/off ratios greater than 108 at 5 V drain bias. Good results were also obtained for PVD films that can be further improved by optimizing deposition and anneal conditions. In moving toward very low temperature polysilicon processing (less than 230 °C) both PECVD and PVD channel films appear to be viable candidates.

Abstract Polycrystalline silicon (poly‐Si) thin‐film transistors (TFTs) were fabricated with a dual‐layer gate dielectric of electron‐cyclotron resonance (ECR) oxide and plasma‐enhanced chemical vapor deposited (PECVD) oxide, with a maximum process temperature of 150°C, using excimer laser annealing. We demonstrate effective carrier mobilities > 90 cm2/Vs, threshold voltage < 10V and breakdown voltage > 35 V. These are the best results reported to date for any TFT technology compatible with polyester substrates.

ABSTRACTThe development of crystallographic texture in thin film longitudinal recording media is discussed. Polycrystalline thin films may obtain their crystallographic texture by means of a nucleation process such as epitaxial nucleation on a polycrystalline underlayer or by means of a process involving a preferred growth direction. In this paper we will discuss various epitaxial nucleation textures that are obtained in media produced for magnetic recording. We will discuss the way that the underlayer controls the crystallographic texture of the magnetic layer, as well as methods used to control the texture of the underlayer itself. We give a brief overview of some of our recent findings in the growth of NiAl and FeAl films used for underlayers. Finally we will briefly discuss what we have called the tilted electron beam technique. In this technique selected area electron diffraction patterns are obtained at different angles of tilt and the development of arcs in the patterns is analyzed so as to determine the type and amount of crystallographic texture which is present in the films.

Low light level surveillance cameras with significantly higher performance and reduced form factor, than present state of the art are critical for many commercial and military applications. Towards this end, a new approach to low light level cameras was successfully demonstrated. In a cooperative research and development effort between Scientific Imaging Technologies, Inc. of Beaverton, Ore., and Intevac EO Sensors of Palo Alto, Calif., back-illuminated, electron-bombarded CCD (EBCCD) sensors were designed and fabricated. Experiments demonstrated the EBCCD's sensitivity and contrast resolution superior to conventional intensified CCD (ICCD) approaches. Low light level signal to noise (STN) and contrast transfer function (CTF) data are presented. A model is derived that describes the performance of the EBCCD and the back-illuminated CCD relative to conventional approaches to nighttime imaging. A design and simulated performance of a video rate 2/3 inch, back-illuminated, electron-bombarded CCD currently under development for low light imaging applications is also described.