- Research Article
- 10.1109/led.2026.3659173
11.7 W/mm Continuous Wave Output Power in X-Band AlN-Buffer HEMTs
- Apr 01, 2026
- IEEE Electron Device Letters
- Reet Chaudhuri + 6 more +6
Power amplifiers (PAs) using HEMTs with aluminum nitride (AlN) buffer layers promise superior thermal performance over the current generation of GaN-buffer HEMT PAs. However, the continuous-wave (CW) output power densities from AlN-buffer HEMTs have been limited to <6 W/mm so far. This work presents the advancement in the large-signal RF performance of AlN-buffer HEMTs with a 2× improvement in CW output powers. AlN-buffer HEMTs with 180 nm gate length and 2 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i>m source-drain distance fabricated on 100 mm SiC substrates, show oncurrents of 1.1 A/mm and breakdown voltage ∼100 V. On-wafer load-pull power sweep measurements conducted at 10 GHz demonstrated a maximum CW power output (P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub>) of 5.5 W/mm at 28 V and 11.7 W/mm at 50 V bias. At 50 V, the peak PAE of 49 % had an associated Pout 11.32 W/mm and linear gain of 9.35 dB. This significant power enhancement in AlN-buffer HEMT performance, coupled with its intrinsic thermal advantage over GaN-buffer HEMTs, paves the way for adoption in critical RF applications.
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