Jet Process Corporation (United States)

This paper describes a VCO (Voltage Controlled Oscillator) by ceramic resonator with variable reactance circuit using positive/negative capacitance circuit. Because ceramic resonator is made of stable piezoelectric ceramics and its oscillation frequency is primarily adjusted by the size and thickness of the ceramic element, a ceramic resonator has high oscillation and Q stabilities. Ceramic resonator is frequently used as VCO by adding external variable capacitance circuit. But external capacitance gives a negative effect that an oscillation frequency should go down lower than physical fixed value. The variable reactance circuit realized by positive and negative capacitance circuit can make the oscillation frequency either decrease or increase. Additionally, when a reactance circuit is balanced on neither positive nor negative, the ceramic resonator's oscillation frequency is equal to physical fixed value unaffected by reactance circuit. We designed the oscillation circuit and variable reactance circuit suitable for LSI, and we built this VCO with reactance circuit onto PLL system for evaluation.

In this work, we grew lead titanate (PbTiO3) and La-modified PbTiO3 thin films on platinized silicon (Si(100)) substrates under controlled substrate temperature and ambient by a modified jet-vapor deposition (JVD) process described in this paper. The x-ray diffraction patterns obtained from these films showed a single-phase perovskite structure. We examined locally homogeneity and thickness of these films through the comparative use of laser Raman spectroscopy. We also collected Raman and x-ray data on pure PbTiO3, as well as prepared lead zirconate titanate (PZT) (54/46), and PZT (50/50) films using the JVD process. This paper discusses the temperature variations of the pyroelectric and dielectric properties of three compositions of La-modified PbTiO3 films containing 5.2% to 15% of La, respectively, with a view toward studying the effect of La in place of Pb on these electrical properties. We detected significant pyroelectric currents on all three La-modified PbTiO3 films before performing poling treatments, and observed pyroelectric coefficeints as high as 84 nC/cm2·°C in the poled La-doped PbTiO3 films containing 5.2% La. The pyroelectric coefficient and dielectric constant varied significantly with La content. We compared the calculated figures of merit, which were based on the measured physical properties, with pure PbTiO3 as well as PZT and lead lanthanide zirconate titanate (PLZT) films. These properties just described illustrate that these films would be suitable for IR detectors.

The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when Jet Vapor Deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface and well behaved bulk properties, MOSFET characteristics, and ring oscillator performance. Process optimization and manufacturing issues remain to be addressed.

ABSTRACTAs MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.

This paper reports our results on the properties of gate-quality silicon nitride thin films produced by the jet vapor deposition (JVD) technique at room temperature. It will be shown that the electrical properties and reliability of the metal-nitride-silicon (MNS) capacitors, in terms of their densities of interface traps, leakage current, and resistance against hot-carrier or radiation damage, are significantly better than similar devices made by any other deposited nitrides previously reported.

The flowfield characteristics are simulated numerically in an oblique shock wave/laminar boundary-layer interaction for three different bleed configurations. The numerical solution for the flowfield is obtained for the strong conservation-law form of the two-dimensional compressible Navier-Stokes equations using an implicit scheme. The computations model the flow in the interaction region and inside the bleed slot for an impinging oblique shock of sufficient strength to cause boundary-layer separation on a flat plate boundary layer. The computed results are presented for a normal bleed slot at three different locations: 1) upstream, 2) across, and 3) downstream of the shock impingement point. The detailed flow characteristics in the interaction zone and inside the bleed slot are compared for the three cases. The resulting surface pressure and shear stress and boundary-layer displacement and momentum thickness distributions are also compared for the three bleed cases and for the shock wave/boundary-layer interaction without bleed.

Abstract