Keysight Technologies (Austria)

We demonstrate the reconstruction of battery electrochemical impedance spectroscopy (EIS) curves from time-domain pulse testing and the distribution of relaxation times (DRT) analysis. In the proposed approach, the DRT directly utilizes measured current data instead of simulated current patterns, thereby enhancing robustness against current variations and data anomalies. The method is demonstrated with a simulation, a single cylindrical battery cell experiment, and an experimental EIS of a completely assembled module of 448 cells. For the 3.7 kWh battery module, we applied a transient current pulse and analyzed the dynamic voltage responses. The EIS curves were reconstructed with DRT and compared to experiments across different states of charge (SoC). The experimental EIS data were corrected by a multistep calibration workflow in a frequency range from 50 mHz to 1 kHz, achieving error corrections of up to 80% at 1 kHz. The reconstructed impedances from the pulse test data are in good agreement with the EIS experiments in a broad frequency range, delivering relevant electrochemical information including the ohmic resistance and dynamic time constants of a battery module and its corresponding submodules. With the proposed workflow, rapid pulse tests can be used for extracting electrochemical information faster than standard EIS, with a 67% reduction in measurement time. This time-domain pulsing approach provides an alternative to EIS characterization, making it particularly valuable for battery monitoring, the classification of battery packs upon their return to the manufacturer, second-life applications, and recycling.

We propose a wideband high-gain array antenna approach for 6G communications in D band (110-170 GHz) wholly using industry standard printed circuit board (PCB), based on the aperture coupled stacked patch structure. Notably, to enhance array gain, bandwidth and meanwhile to meet the low-cost PCB standard, we propose an antenna structure on 6 layers PCB in which two metal layers are placed between the top and bottom patch layers functioned as null ground layers and via connection to form via fences for the suppression of surface waves between all antenna elements. To characterize the antenna, a wideband WR6 waveguide to microstrip (WG to MS) transition is designed to interface with the microstrip line feeding. Simulated designs and measurements of the fabricated antennas and test structures are described and analyzed. Measurements well agree with the simulations, achieving excellent results with 35 GHz bandwidth ranging from 123 GHz to 158 GHz, and a peak measured array gain of 17.5 dBi for 16 antenna elements. The design approach is therefore a low-cost solution to meet the expected requirements of 6G communications in terms of bandwidth, gain, scalability, and ease of integration to radio frequency integrated circuits (RFICs).

Abstract Invited for this month′s cover picture is the group of researchers at Keysight Technologies Labs Austria. The front cover shows the error sources with different distribution functions affecting the battery impedance measurements. The uncertainties due to these errors are propagated in a metrology framework resulting in the confidence level of the impedance‐based cell classification. Read the full text of the article at 10.1002/batt.202200524

We have demonstrated the capabilities of the scanning microwave microscopy (SMM) technique for measuring ferromagnetic resonance (FMR) spectra in nanometric areas of magnetic samples. The technique is evaluated using three different samples, including a yttrium iron garnet (YIG) polycrystalline bulk sample and a thick YIG film grown by liquid phase epitaxy (LPE). Patterned permalloy (Py) micromagnetic dots have been characterized to assess the performance for imaging applications of the technique, measuring the variation of the magnetic properties of the sample along its surface. The proposed technique may pave the way for the development of high spatially resolved mapping of magnetostatic modes in different nanomagnetic and micromagnetic structures.

Novel approaches to materials design, fabrication processes and device architectures have accelerated next-generation electronics component production, pushing device dimensions down to the nano- and atomic-scale. For device metrology methods to keep up with these developments, they should not only measure the relevant electrical parameters at these length-scales, but ideally do so during active operation of the device. Here, we demonstrate such a capability using the full functionality of an advanced scanning microwave/scanning capacitance/kelvin probe atomic force microscope to inspect the charge transport and performance of an atomically thin buried phosphorus wire device during electrical operation. By interrogation of the contact potential, carrier density and transport properties, we demonstrate the capability to distinguish between the different material components and device imperfections, and assess their contributions to the overall electric characteristics of the device in operando. Our experimental methodology will facilitate rapid feedback for the fabrication of patterned nanoscale dopant device components in silicon, now important for the emerging field of silicon quantum information technology. More generally, the versatile setup, with its advanced inspection capabilities, delivers a comprehensive method to determine the performance of nanoscale devices while they function, in a broad range of material systems.

Development of future battery generations and quality control of current lithium-ion battery (LIB) systems require reliable techniques for the characterization of the complex dynamic processes in batteries. Electrochemical impedance spectroscopy (EIS) is an established tool for the electrochemical characterization of LIBs and the related ageing processes. Nevertheless, ensuring a reliable interpretation and validation of the impedance data remains challenging. Here we show how EIS complemented by microscopy data can be successfully used to follow battery ageing. We connect data from both methods in an electrochemical finite element model (FEM) to extract changes of intrinsic battery parameters, such as double layer capacitance, film resistance, exchange current density, and particle radii. Ageing mechanisms induced by cycling and temperature are investigated by EIS on commercial cells. Postmortem analysis of the anode and cathode electrodes is carried out to determine their initial micrometric and nanometric structure and to independently investigate morphological and electrical changes induced by ageing. While the obtained initial structural dimensions reduce drastically the number of adjustable parameters in the FEM model, which enables us to follow battery ageing processes noninvasively through the EIS spectra, the microscopy results of the aged cells prove independently the validity of the here presented approach.

A systematic and quantitative comparison of electrical detection systems in scanning microwave microscopy is reported. Scanning microwave microscopy (SMM) is capable of investigating nanoscale electrical properties with high accuracy over a broad frequency range of 1-20 GHz. However, due to the passive matching network only discrete frequencies can be used every 1 GHz with varying signal-to-noise ratio (SNR). Here we study in detail the impedance matching mechanism using an interferometric network where a two-port measurement is implemented with a reduction of the trace noise due to signal subtraction. The interferometer setup shows superior performance resulting in a 2-8 fold increased SNR with respect to the standard shunt solution, in addition to stable broadband performance over the full frequency range. We perform a comparison of the electrical sensitivity obtained using a direct connection from the network analyser to probe, the typically implemented shunt-resonator impedance matching network, and the proposed interferometer setup. The interferometer SMM allows us also for calibrated impedance measurements, which we demonstrate on Tobacco mosaic viruses with 18-nm diameter, with a capacitance resolution of 0.67 attoFarads at 10 ms acquisition time per pixel.

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope-based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers.