MACOM (Japan)

The demand for BW is increasing at an unbelievable pace, the Chip, System and Optics industries are trying to converge on the next generation signaling rate to cater to this surge in BW demand. IEEE 802.3 is already working on 100G signaling for 100GBASE-DR1 and 400GBASE-DR4 & OIF PLL group has started to work on CEI-112G-PAM4-VSR. MACOM has envisioned this transition early and has had the opportunity to “play” with this technology in the lab for over a year. In this presentation we'll touch on some of the experiments conducted so far.

A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.