Micron (Japan)

Traumatic brain injury is a world-leading cause of disability. Current treatments are not sufficient to promote neurological recovery. Intracerebral transplantation of allogeneic mesenchymal stem cells, specifically SB623, has shown promise in achieving better neurological recovery compared with a sham surgery group in the STEMTRA trial. However, the optimal location for cell transplantation remains unclear, as transplanted lesions vary between patients. This study aimed to explore the relationship between functional recovery and the location of transplanted lesions. This study included all Japanese subjects from the STEMTRA trial who were assigned to the cell transplantation group. Functional recovery was assessed by the difference in Fugl–Meyer Motor Scale (FMMS) scores between the screening period and 24 or 48 weeks post-transplantation. An FMMS score improvement of >8 was defined as an improved group. Lesions responsible for motor deficits were categorized into three groups: motor cortex (Cortex), deep white matter (DWM), or both (Cortex and DWM). Data on the 15 transplanted sites per patient were obtained from surgical navigation software, and the distance from the damaged area to the transplanted sites was calculated. Twelve patients were included in this post-hoc analysis. No patients in the 2.5 × 106 cells group showed improvement and were therefore excluded from further analysis. Five patients were categorized into the Cortex group and four into the DWM group. The distance between the transplanted site and the injury point ranged from 0 to 39 mm. A moderate to strong trend of correlations was observed, suggesting that a shorter distance is preferable for the motor cortex group, while a greater distance is preferable for the DWM group. The optimal site for stem cell transplantation may be different from the damaged site of the patient; however, a further large number cohort is necessary to elucidate this hypothesis.

As the proportion of LWR/CDU in the EPE budget has tightened in recent years, its reduction has become a critical issue. Among many factors, contributions of resist and speckle play a key role in LWR/CDU. The authors therefore carried out a series of experiments in which the resist compositions and the speckle were controlled in order to validate the above points. The spatial frequency of the speckle was controlled by controlling the illumination conditions of the scanner in the experiments. The experiments not only clarified the contributions of resist and speckle, but also confirmed the contribution of the interaction between resist and speckle. We were able to use PSD analysis with the results of a simplified model-based Monte Carlo simulation to explain the interaction between resist and speckle. In addition, experimental results proved that LWR/CDU reduction can be achieved by reducing speckle and optimizing resist composition.

With the recent evolution of AI, our digital world, constructed by networks, is advancing rapidly and driving demand for data bandwidth and transfer speed everywhere from mobiles to data centers, regardless of form factor. This paper presents a 1Tb 3b/cell 3DNAND Flash on 2YY Tiers with a 6-plane and 3.6GT/s data-transfer features designed for a variety of applications that require high bandwidth.

We consider the initial value problem for cubic derivative nonlinear Schr\"odinger equation in one space dimension. Under a suitable weakly dissipative condition on the nonlinearity, we show that the small data solution has a logarithmic time decay in $L^2$.

The accuracy of the Java simulation by the Runge-Kutta method for the charge motion in electric and magnetic fields has been investigated in comparison with the analytical solution. The error of the simulation depends on the time increment, h , used for the numerical calculation. If we use an increment that is larger than the boundary value, the simulation results in a non-accurate image of the charge motion. In this case, the simulation almost results in an underestimation, that is, a motion that is smaller than the real motion. The boundary increment is proportional to the mass of the charge, m , and is inversely proportional to the charge, q , and the magnetic field, B 0 . The empirical results conclude that the image of the charge motion can be obtained accurately by Java simulation using h < 0.2 m / qB 0 .

The electrochemical detection of dissolved ozone in water was examined using boron-doped diamond (BDD) electrodes. A well-defined reduction peak was observed at ~380 mV for H-terminated BDD, whereas it was observed at ~200 mV in the case of O-terminated BDD for an ozone solution in a 0.1 M phosphate buffer solution at pH 7. The peak potential for ozone reduction was selective with respect to oxygen reduction at both H- and O-terminated BDD electrodes, whereas it occurred at approximately the same potential as oxygen reduction at other types of solid electrodes, including glassy-carbon, platinum, and gold electrodes. Interference from chlorine was not observed in lower concentration than 300 μM ClO(-). Furthermore, in order to apply the detection technique to electrolyte-free media, BDD microelectrodes were also used. A linear calibration curve for dissolved ozone in water could be achieved between concentrations of 0.49 and 740 μM, with an estimated detection limit (S/N = 3) of 0.185 μM (S/N = 3). Excellent stability was demonstrated for repetitions of these calibration curves performed in 3 consecutive days.

A word-line voltage generator is proposed to compensate temperature variations in the threshold voltages of flash memory cells by mixing a first current with a negative temperature coefficient with a second current with zero temperature dependency whose current is adjustable per level per operation. The measured results showed that 1) the output voltage could be adjusted from 0.15V to 2.5V with a resolution of 10mV at 90C, and 2) the temperature coefficient could be adjusted from 0 to −5mV/K with a resolution of −0.04mV/K. Thus, a temperature variation in V t of the memory cells can be reduced to ±10% with the generator circuit. The generator consumed 500μA and occupied 0.24mm2.