Micropyretics Heater International (United States)

24 month high-ZT stability of Bi0.5Sb1.5Te3/Sb2O3 nanocomposites that demonstrate simultaneous Seebeck coefficient enhancement and thermal conductivity decline through energy filtering effect.

It is known that a phenomenon in which a cardiac rhythm synchronizes with a locomotor rhythm occurs during running. At this synchronization, the cardiac rhythm rate increases in proportion to the locomotor rhythm intensity, and when it approaches the limit locomotor rhythm intensity, an unstable phenomenon of the cardiac rhythm increases becomes sometimes observed. This instability of the cardiac rhythm causes lower exercise efficiency, so it is necessary to keep the stable cardiac rhythm up to the faster locomotor rhythm as far as possible. Therefore, we obtain a frequency domain model with a locomotor rhythm added to the Van der Pol equation that expresses the cardiac rhythm, and propose a reset controller to suppress the instability of the cardiac rhythm by using the descriptive function method for this model.

We have reported a controlled crystal growth process, which allows the formation of NiCNNi CP nanoflakes derived Ni3C and fcc-Ni nanoparticles.

High-chromium containing single-phase ferritic alloy surfaces are commonly used in high-temperature radiant heating applications. The surface emissivity number at any given temperature determines the rate of conversion from internal to radiant energy. In this article, using experimental data and numerical simulations, we have determined the emissivity of a Fe-5.8 pct Al-22 pct Cr alloy surface, as a function of temperature. Experimentally measured temperature values were compared with results from numerical simulations in order to accurately determine the surface emissivity. In the temperature range of 1200 to 1350 K, the emissivity was noted to increase with temperature.

ABSTRACTSi+ implant activation efficiencies above 90%, even at doses of 5×1015 cm−2, have been achieved in GaN by RTP at 1400–1500°C for 10 secs. The annealing system utilizes with MoSi2 heating elements capable of operation up to 1900 °C, producing high heating and cooling rates (up to 100 °C · s−1). Unencapsulated GaN show severe surface pitting at 1300 °C, and complete loss of the film by evaporation at 1400 °C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AIN and 3.4 eV for InN). Encapsulation with either rf-magnetron reactively sputtered or MOMBE-grown AIN thin films provide protection against GaN surface degradation up to 1400 °C, where peak electron concentrations of ∼5×1020 cm-3 can be achieved in Si-implanted GaN. SIMS profiling showed little measurable redistribution of Si, suggesting Dsi ≤ 10-13 cm2 · s−1 at 1400 °C. The implant activation efficiency decreases at higher temperatures, which may result from SiGa to SiN site switching and resultant self-compensation.