NAURA (China)

Shallow trench isolation in large-scale integrated circuits is currently the main isolation method. With the increase of integration density, the requirements of shallow trench isolation technology are getting higher and higher. In this paper, the problem of sidewall damage in shallow trench isolation (STI) etching is solved by adjusting the selection of process parameters. In the experiment, the formation of polymer is controlled by changing the content of O2 to solve the problem of Si top damage. After solving and optimizing the process difficulties of shallow trench isolation in this article, the performance of the obtained isolation structure fully meets the requirements of large-scale mass production of logic device technology.

As a neurodegenerative disease, early diagnosis of Alzheimer's disease (AD) is essential for delaying the progress of the disease. Due to the limitations of diagnostic methods, new biomarkers and detection technologies are urgently needed. Therefore, this paper mainly discusses the research and development of specific antibodies by lymphocyte hybridoma technology and the application of proximity extension assay (PEA) methodology in the field of in vitro diagnosis (IVD) for early screening detection of AD [1]. By applying Olink proteomic analysis technology with PEA methodology, the potential value of Olink proteomic analysis technology in improving the diagnostic accuracy and early identification of AD is clearly explained, which provided new ideas for future research direction and clinical application.

Accurate and strict etching processes are the development requirements for the continuous integration of semiconductor devices. In this paper, we based on CH3F/Ar dep and implemented it to the plasma etching process of dep-etch cycle, achieving a high aspect ratio and depth controllable Si trench etching with mask no-loss.

Precise technique can remove Al2O3 film slowly and evenly by adjusting the gas ratio, pressure, power, temperature and other parameters in ICP plasma. The volatile will release occurs during a physical bombard between a gaseous reactant and the surface modified layer. In this study, BCl3 and Ar/He plasma were used to carry out precise surface etching of Al2O3 layer. Overall this technique has the potential at low temperature for ~50A Al2O3 etching process in semiconductor integration.

The amorphous carbon used as the hard mask for the etching of slit trench in flash memory, was etched using O2/COS and pulsed dual-frequency inductively coupled plasma. Line edge roughness(LER) of carbon hard mask will transfer to slit trench and result in severe yield loss. In this paper, lots of methods are proposed to reduce LER. The results show that LER can be significantly improved by reducing deposition, lower bias power and enough time or plasma amounts to remove sidewall polymer.

BackgroundKampo medicine is widely used in Japan; however, most physicians and pharmacists have insufficient knowledge and experience in it. Although a chatbot-style system using machine learning and natural language processing has been used in some clinical settings and proven useful, the system developed specifically for the Japanese language using this method has not been validated by research. The purpose of this study is to develop a novel drug information provision system for Kampo medicines using a natural language classifier® (NLC®) based on IBM Watson.MethodsThe target Kampo formulas were 33 formulas listed in the 17th revision of the Japanese Pharmacopoeia. The information included in the system comes from the package inserts of Kampo medicines, Manuals for Management of Individual Serious Adverse Drug Reactions, and data on off-label usage. The system developed in this study classifies questions about the drug information of Kampo formulas input by natural language into preset questions and outputs preset answers for the questions. The system uses morphological analysis, synonym conversion by thesaurus, and NLC®. We fine-tuned the information registered into NLC® and increased the thesaurus. To validate the system, 900 validation questions were provided by six pharmacists who were classified into high or low levels of knowledge and experience of Kampo medicines and three pharmacy students.ResultsThe precision, recall, and F-measure of the system performance were 0.986, 0.915, and 0.949, respectively. The results were stable even with differences in the amount of expertise of the question authors.ConclusionsWe developed a system using natural language classification that can give appropriate answers to most of the validation questions.

As the feature size of device continues to shrink, the whole industry puts forward higher requirements for the performance and quality of silicon chips. Meanwhile, in order to reduce the cost of integrated circuit manufacturing, it has become a trend to use larger wafers (e.g. from 8 inches to 12 inches) for various silicon based devices.For those high temperature processes treated in furnace, especially exceeding 1000°C, a larger wafer size leads to an increase in thermal stress caused by gravity mostly, which often results in the defects including slip dislocations during heat treatment in high temperature oxidation and anneal processes. The dimension and distribution of slip defects are critical for devices. In some cases the aggregation and severe defects may cause device failure. Therefore, it becomes much more important to find methods to control the defect level by optimization of certain process condition to reduce the occurrence of slips during heat treatments. For instance, it is very critical for the design of wafer support structure, which is related to higher temperature requirements of vertical oxidation diffusion equipment.There are many literatures reporting on the generation and inhibition of silicon wafer slip defects. These papers mainly focus on the nailing effect of oxygen atoms, the influencing factors of gravity stress, the prediction of temperature rise and fall rate, and the theoretical calculation etc. But there are few summaries to analyze the correlations between them. Moreover, measurement techniques and early theories are needed to be updated iteratively. In this review, we describe the recent progresses in the field of silicon wafer slip and discuss the effect and following improve methods to control slip defects during various thermal processes. Meanwhile summarize the influencing factors of slip line defects, such as wafer strength, gravity-dependent stress and thermal stress, based on the formation mechanism of slip lines. Finally, we propose an optimization method to control slip defects for high-temperature process in vertical furnace.

The side wall angle is the main parameter to measure the profile of the side wall of trench. In this paper^^81CHBr, SF$_{6} , \mathrm{O}_{2}$, CF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> are used as the main etching gases, and the sidewall morphology is adjusted under the condition of optimizing the etching sequence of mixed gases, smooth and continuous sidewall morphology is obtained.