Nice Solar Energy (Germany)

An open circuit voltage boost from 0.33 to 0.50 V is reported by M. Zutter et al. (article no. 1900145) for solar cells comprising industrial-grade Cu(In,Ga)Se2 absorbers and sputtered Zn(O,S) buffer layers. The research shows that thermal annealing up to 200 °C shifts the dominant recombination pathway from interface to bulk. Concurrently, ultraviolet-photoelectron spectroscopy reveals an increase of the work function of Zn(O,S) films deposited on Cu(In,Ga)Se2. The change of conduction band offset and the observed wavelength-dependent improvement of charge-carrier collection are consistent with solar cell capacitance simulations. The study identifies future steps needed to achieve efficient cells based on all-vacuum processed components.

Abstract A multipurpose interconnection layer based on poly(3,4‐ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS), and d‐sorbitol for monolithic perovskite/silicon tandem solar cells is introduced. The interconnection of independently processed silicon and perovskite subcells is a simple add‐on lamination step, alleviating common fabrication complexities of tandem devices. It is demonstrated experimentally and theoretically that PEDOT:PSS is an ideal building block for manipulating the mechanical and electrical functionality of the charge recombination layer by controlling the microstructure on the nano‐ and mesoscale. It is elucidated that the optimal functionality of the recombination layer relies on a gradient in the d‐sorbitol dopant distribution that modulates the orientation of PEDOT across the PEDOT:PSS film. Using this modified PEDOT:PSS composite, a monolithic two‐terminal perovskite/silicon tandem solar cell with a steady‐state efficiency of 21.0%, a fill factor of 80.4%, and negligible open circuit voltage losses compared to single‐junction devices is shown. The versatility of this approach is further validated by presenting a laminated two‐terminal monolithic perovskite/organic tandem solar cell with 11.7% power conversion efficiency. It is envisioned that this lamination concept can be applied for the pairing of multiple photovoltaic and other thin film technologies, creating a universal platform that facilitates mass production of tandem devices with high efficiency.

Large‐scale industrial fabrication of Cu(In,Ga)Se2 (CIGS) photovoltaic panels would benefit significantly if the buffer layer chemical bath deposition could be replaced by a cadmium‐free dry vacuum process suitable for in‐line production. This Letter reports on the development of a Zn(O,S) buffer layer deposited by vacuum‐based magnetron sputtering from a single target onto commercial CIGS absorbers cut from a module‐size glass/Mo/CIGS stack. The buffer‐window stack consisting of Zn(O0.75S0.25)/i‐ZnO/ZnO:Al is optimized for layer thickness and optical and electronic properties, leading to an average device efficiency of 4.7%, which can be improved by annealing at 200 °C to a maximum of 10.5%, mainly due to a considerable increase in the open‐circuit voltage (Voc). Temperature‐dependent current density versus voltage (J–V) characteristics show a reduced interface recombination upon annealing, explaining the observed Voc boost. Quantum efficiency shows improvements in the long and short wavelength region, setting in at different annealing temperatures, and photoemission depth profiling indicates interdiffusion of all atomic species at the CIGS/Zn(O,S) interface. Electrical device simulations explain the observed effects by a modification of the band offset at the interface and defects passivation. Both effects are attributed to the observed interdiffusion during annealing.