- Conference Article
- 10.1109/icaect68478.2026.11426155
Machine Learning Approach to Predict Tunnel FET Characteristics Using Random Forest Regression
- Jan 08, 2026
- Ajaykumar Dharmireddy + 5 more +5
TFETs (Tunnel Field-Effects Transistors) are assumed to be ultra-low-power devices because they have steep subthreshold swing and a more favourable scaling characteristic. Their electrical characteristics, however, cannot be adequately simulated using extensive Technology Computer-Aided Design (TCAD) simulations, which are computationally intensive and time-consuming to analyze. In an attempt to overcome this bottleneck, a proposal for a machine learning (ML)-based surrogate modeling framework is provided where the prediction of the critical TFET properties of transfer curves, Ion, Ioff, threshold voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{th}}$</tex>), and subthreshold swing (SS) is endeavored with the help of the Random Forest Regression (RFR) model. The data collected based on TCAD simulations and literature reports was processed, trained, and tested on various ML models such as the Artificial Neural Networks (ANN), Support Vector Regression (SVR) and RFR. The calculated R2 of the proposed RFR model was better than ANN and SVR, with a much smaller MSE (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{3. 2 1} \times \mathbf{1 0}^{-\mathbf{7}}$</tex>) and an RMSE (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{1. 7 9} \times \mathbf{1 0}^{-\mathbf{4}}$</tex>), showing that the model is robust and exhibits better generalization within the conditions of the devices used. Also, the ranking of intrinsic feature importance offered by RFR has a better interpretation rate and complies well with the previous findings on TCAD. These findings place RFR as a sound and efficient substitute for TFET modelling, with lower computational expense and intact physical stability, and thus add another facet and a practical approach to future device design optimization, assisted by a novel and powerful ML
Read more