STMicroelectronics (Netherlands)

A peak-current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">PK</inf>) limited Pulse-Frequency Modulation (PFM)-based SoC-compatible buck converter is designed in scaled-CMOS technology. In an Li-ion compatible input supply range of 2.7V-4.2V, it delivers a 0.55V output. It employs a low-power Bandgap reference, in-built push-pull voltage-regulators with adaptive-biasing, duty-cycled sensors and a failsafe asynchronous block. This architecture alleviates the need for a clock and limits inrush current at startup. Made using 3.3V bulk-MOSFETs, device voltage stress is managed for each sub-block. It only needs external L & C of 4.7µH & 4.7µF. Occupying an area of 660µm x 1465µm, it targets Standby mode of operation for low-power applications like Internet-of-Things (IoT) and Bluetooth Low Energy (BLE), supporting a load-current of 0.5mA to 10mA with >80% efficiency and has >70% efficiency till 0.1mA. It achieves a peak efficiency of 84.7% at 5mA load.

Electronic System-Level design has arrived - but can ESL provide the bridge from systems to silicon? Comprised of real world designers, this DAC ESL panel will examine and debate what works, what doesn't, and what the gaps are in the methodology and tool offerings. Panelists from a variety of industry segments, including Military/aerospace, storage area networks (SAN), wireless communications and consumer electronics, will share their experiences, lessons learned and further needs.Does ESL bridge the gap between systems to silicon? Hear from designers about their real world experience with ESL. What worked according to expectations? What didn't? What are the gaps in the methodology and tool offerings that need to be filled, and why?This panel of ESL design methodology users will give us a reality check that will enable potential users to make an adoption decision, and enable ESL design tool suppliers to evaluate their product strategies against big picture requirements.

Electron beam pattern generators are nowadays used extensively for the production of masks and for direct writing on wafers. For obvious reasons electron beam pattern generators are optimized for integrated circuit fabrication. However there is also considerable potential for the use of electron beam lithography in other areas. In this paper recent trends in the development of electron beam pattern generators are described and the problems encountered in the application of electron beam machines in other areas e.g. integrat-ed optics are discussed.

Electron beam pattern generators are nowadays used extensively for the production of masks and for direct writing on wafers. For obvious reasons electron beam pattern generators are optimized for integrated circuit fabrication. However there is also considerable potential for the use of electron beam lithography in other areas. In this paper recent trends in the development of electron beam pattern generators are described and the problems encountered in the application of electron beam machines in other areas e.g. integrated optics are discussed.