Staib Instruments (United States)

Journal Article Capabilities of a New Compact SEM / STEM Electron Detector for Energy Resolved Scanning Imaging, Reflection Electron Energy Loss Spectroscopy (REELS) and Elastic Peak Electron Spectroscopy (EPES) Get access P Staib P Staib Williamsburg Scientific Instruments, Staib Instruments, Williamsburg, VA, USA Corresponding author: pstaib@wscientific.com Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 29, Issue Supplement_1, 1 August 2023, Pages 399–400, https://doi.org/10.1093/micmic/ozad067.187 Published: 22 July 2023

Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and (1¯12)-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO ⟨110⟩ and β-Ga2O3 [021] || STO ⟨100⟩, respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.

A new Auger electron spectrometer probe designed to monitor the surface composition during growth is presented. The device is able to operate without impairing the deposition process and is compatible with the environmental constraints of deposition chambers. Auger electron excitation can be generated by the electron beam used for reflection high energy electron diffraction studies, thus allowing simultaneous elemental and structural sample analyses. The Auger probe is mounted using one of the ports facing the sample, preferably at normal incidence angle. The distance between the sample surface and analyzer is large enough to clear the fluxes of material from multiple deposition sources commonly used in growth chambers. The probe has a variable energy resolution that can be electronically adjusted and can be set for higher sensitivity and shorter acquisition time or for better energy resolution. Examples of applications are shown to illustrate the capabilities of the instrument. In one example, the growth of zinc oxide (ZnO) layers is monitored during the deposition and in the other example, the stoichiometry of the lanthanide alloys (dysprosium and terbium) is deduced from the variation of the Auger MNN lines for pure elements and alloyed layers. In addition to AES, the probe provides reflection electron energy loss spectroscopy spectra of the distribution of characteristic energy losses.