- Research Article
- 10.1299/jsmecmd.2025.38.os10-2
Numerical Simulation of Diamond Epitaxial Growth by MPCVD
- Jan 01, 2025
- Keisan Rikigaku Koenkai koen ronbunshu/Keisan Rikigaku Kouenkai kouen rombunshuu
- Yuji Mukaiyama
Diamond is a promising next-generation semiconductor because of its wide bandgap, high thermal conductivity, and excellent electrical properties. Microwave Plasma Chemical Vapor Deposition (MPCVD) method has been widely used for high-quality diamond epitaxial growth, but the process involves complex interactions among electromagnetic field, plasma dynamics, heat transfer, mass transport, and chemical reactions in the reactor. To analyze these phenomena, we developed a specialized simulation software, DiaDeMoTM, for modeling diamond epitaxial growth using MPCVD method. This software enables quantitative prediction of growth rate of diamond, and support reactor and process optimization. Using DiaDeMo, we investigated effect of pressure and microwave power to plasma density, temperature, radical species distributions, and growth rate on the substrate. Moreover, the simulation results were validated through comparison with optical emission spectroscopy measurements.
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