Technologiezentrum Halbleitermaterialien

This paper presents a modular platform architecture to support the development of Artificial Intelligence (AI)-based applications in the electronic systems domain. Built of freely available tools and open-source software, it tries to minimize the restrictions required while providing support to AI pipeline developers. In order to deal with unforeseen requirements, retain sovereignty and have the possibility to customize the pipeline where necessary, the presented solution comprises components and concepts such as data storage, versioning, pipeline execution, containerization or local and remote environments. Software tools implementing the aforementioned components can possibly be exchanged and adapted to the problem at hand. Furthermore, the modularized concept allows the developers to run the same pipeline seamlessly on a local machine or a remote server. Additionally, other entities can be integrated in the places where they are needed, e.g. data producers. Finally, the proposed architecture is applied to two different use cases. First, a classification model for electromagnetic compatibility is designed to identify possible root causes given measurement spectra. Second, a pipeline to derive netlists from schematics is depicted where data is represented as bitmaps only. For both use cases, excerpts of their implementation and special features using the proposed tools are shown. Although the two use cases could be implemented in the architecture, a slightly higher configuration effort is currently required.

Nghiên cứu nhằm xây dựng bản đồ phân bố PM2.5 và đánh giá tác động của PM2.5 đến tử vong do ung thư phổi và ung thư hệ hô hấp tại TPHCM năm 2018. Bản đồ PM2.5 được xây dựng dựa trên quan trắc 96 điểm vào mùa mưa và khô bằng thiết bị AirBeam2 và thuật toán nội suy IDW. Phân tích tác động của PM2.5 đến tử vong do ung thư phổi và hệ hô hấp dựa trên dữ liệu tử vong A6/YTCS Bộ Y tế và mô hình BenMAP. PM2.5 trung bình cả năm cao hơn tiêu chuẩn an toàn sức khỏe của WHO (PM2.5<10 µg/m3). PM2.5 đã đóng góp 6,3% (35/557) tử vong do ung thư phổi và 6,5% (41/629) tử vong do ung thư hệ hô hấp. Mỗi 10 mg/m3 PM2.5 tăng thêm thì số ca tử vong là 64 ca. Cần có những biện pháp ngắn hạn phòng tránh tác hại của PM2.5 và biện pháp dài hạn giảm thiểu ô nhiễm PM2.5.
 
 
 

Optical, and especially fiber-optic techniques for the sensing of pH have become very attractive and considerable research progress in this field has been made over a number of years. The determination of the pH level across a broad range of applications today, e.g. in life sciences, environmental monitoring, industry and widely in biologically research is now accessible from such optical sensors. This arises because familiar sensors are often limited in terms of their response time and drift, which reduces the use of the current group of such fiber-optic sensors in wider applications. A new compact sensor design has been developed in this work, based on a specially-formed fiber-optic tip that was coated with a pH-sensitive dye, covalently linked to a hydrogel matrix to provide high stability. The sensor developed has a very fast response time (to 90% of saturation, Δt₉₀) of < 5 seconds, a sensing uncertainty of about ± 0.04 pH units and given the covalently bonded nature of the dye, leeching is reduced and the probe is very stable over many days of use. During extended continuous use over ~12h in pH 7, this stability was confirmed, with drift of < 0.05 pH/h. Preliminary experiments in an important biological application, monitoring over pH levels from pH 5 to pH 8.5, are shown and discussed.

The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of various defects is discussed and attributed to feedstock (concentration of transition metals), growth setup (carbon concentration), or growth process (dislocation density), showing the potential for further optimization. A distinct correlation between crystal defects and bulk carrier lifetime is observed. A bulk carrier lifetime with values up to 600 μs on passivated surfaces of dislocation-free parts of the crystal is currently achieved.

During the growth of <100>‐oriented, heavily n‐type doped silicon crystals by the Czochralski method dislocation formation occurs frequently, leading to a reduction of the crystal yield. Up to now, it is not clear where and why the dislocations form. Therefore, heavily As‐doped crystals were studied in this work in more detail by means of X‐ray topography (XRT) and synchrotron X‐ray topography (SXRT). From the data obtained it is concluded that dislocations form during growth of the top cone of the crystals in the vicinity of one of the four so‐called growth ridges.