Toppan (United States)

The article contains sections titled: 1. Introduction 2. The Copper Ions 3. Copper Oxides and Basic Copper Compounds 3.1. Copper(I) Oxide 3.2. Copper(II) Oxide 3.3. Copper(II) Hydroxide 3.4. Copper(II) Carbonate Hydroxide 4. Selected Copper Salts and Basic Copper Salts 4.1. Copper(II) Acetate 4.2. Copper(I) Chloride 4.3. Copper(II) Chloride 4.4. Copper(II) Oxychloride 4.5. Copper(II) Sulfates 4.5.1. Copper(II) Sulfate Pentahydrate 4.5.2. Anhydrous Copper Sulfate 4.5.3. Copper(II) Sulfate Monohydrate 4.5.4. Basic Copper(II) Sulfates 5. Other Copper Compounds and Complexes 5.1. Other Copper Compounds 5.2. Copper Complexes 6. Copper Reclamation 7. Copper and the Environment 8. Economic Aspects 9. Toxicology and Occupational Health

Moving objects and oncoming pedestrians sometimes become obstacles for a pedestrian either on a crosswalk or in the pavement at night. Low vision persons and aged people with low eye sight sometimes dodge against the other pedestrians or danger. A dynamic object should suggest a person its affordance for the safe and pleasant mobility as static object like a chair affords. We propose an affordance of dynamic object based on instinct and an affordance indicator system for safe mobility based on face recognition. The results of examination of the indicator both in a passage and on the stairs are also discussed.

ABSTRACT Reticle cost and cycle time to deliver new circuit design s to a wafer fab remain key focus areas for advanced semiconductor manufacturing and new product development. Resolution enhancement techniques like optical proximity correction as applied to critical layers ha ve increased the burden on mask data pr eparation and reticle writing steps of the mask making flow. The growing data volume and complexity of designs must be reduced to a perfect image on a reticle in the shortest time possible against computer and machine constraints. Continued dependence on 193 nm wavelength exposure in extremely low k 1 lithography exacerbates the underlying trends. Two important factors come together to drive the economics and performance of the reticle line: the complexity of the designs and the productivity of e-beam writing tools. The designs, OPC methods , and writing tool capabilities continue to evolve with each node of technology. The study builds on prior evaluations to look at fundamental pattern complexity across 90nm, 65nm, and 45nm logic designs using the gate and metal-1 critical layers. The writing tool throughput testing uses a range of standard patterns to establish shot limited performance as a calibration method for arbitrary designs. Node to node design and tool to tool generation comparisons highlight actual step changes in complexity and capability by introducing new quantitative methods, be nchmarking metrics, and testing strategi es. The findings are projected into the future using design complexity and writing tool trends to suggest implications about reticle cost, cycle time, or possible gaps in technology development. Keywords : mask data volume, pattern file size, RET, OPC, write time, data density, geometric content

The ORIONTM series of test reticles have been used for many years as the photomask industry standard for evaluating contamination inspection algorithms. The deposition of Polystyrene Latex (PSL) spheres on various reticle pattern designs allow STARlightTM tool owners to measure the relative contamination inspection performance in a consistent and quantifiable manner. However, with recent inspection technology advances such as shorter laser (light source) wavelengths and smaller inspection pixels, PSL spheres were observed to physically degrade over relatively short time periods: especially for the smallest sized spheres used to characterize contamination inspection performance at the most advanced technology nodes. Investigations into using alternative materials or methods that address the issue of PSL shrinkage have not yet proven completely successful. Problems such as failure to properly adhere to reticle surfaces or identification of materials that can produce consistent and predictable sphere sizes for the reliable manufacture of these critical test masks are only some of the challenges that must be solved. Even if these and other criteria are met, the final substance must appear to inspection optics as pseudo soft defects which resemble actual contamination that inevitably appears on production reticle surfaces. In the interim, programmed pindot defects present in the quartz region of the SPICATM test reticle are being used to characterize contamination performance while a suitable long-term solution to address the issue of shrinking PSL spheres on ORION masks can be found. This paper examines the results of a programmed pindot test reticle specifically designed to evaluate contamination algorithms without the deposition of PSL spheres or similar structures. This alternative programmed pindot test reticle uses various background patterns similar to the ORION, however, it also includes multiple defects sizes and locations making it more desirable than the limited range of defects found on the SPICA.

Optical Proximity Correction (OPC) relies on predictive modeling to achieve consistent wafer results. To that end, understanding all sources of variation is essential to the successful implementation of OPC. This paper focuses on challenging SRAM layouts of contacts to study the sources of wafer variation. A range of shape geometries and contact configurations are studied. Contact shapes are no longer restricted to simple rectangles on the mask, some more complex OPC outputs may include shapes like H's or T's or even more fragmented figures. The result is a large group of parameters that can be measured at both mask and wafer level. The dependence of mask variation on geometry is studied through the statistical distributions of parameter variations. The mask metrology output is expanded from traditional linear dimensional measurements to include area, line edge roughness, corner rounding, and shape-to-shape metrics. Wafer mask error enhancement factor (MEEF) is then calculated for the various contact geometries. This collection of data makes it possible to study variation on many levels and determine the underlying source of wafer variations so that, ultimately, they can be minimized.

Previous work has shown that photomask blank flatness as well as photomask patterning and pelliclization all play an important role in finished photomask flatness. Other work has shown that pellicle mounting techniques and pellicle adhesives play a role as well. In this work, a comparison of the impact of various pellicle types, frame flatness, frame shape and pellicle mounting tools on final photomask flatness will be shown. Pellicles with various adhesives, frame shapes and flatness were mounted on blanks and completed photomasks using several mounting tools and the pellicle induced flatness change was measured. These data will be discussed with the objective of demonstrating the effects of pellicle type and mounting tool on photomask flatness.

The semiconductor industry will soon be putting >=1.07NA 193nm immersion lithography systems into production for the 45nm device node and in about three years will be putting >=1.30NA systems into production for the 32nm device node. For these very high NA systems, the maximum angle of light incident on a 4X reticle will reach ~16 degrees and ~20 degrees for the 45nm and 32nm nodes respectively. These angles can no longer be accurately approximated by an assumption of normal incidence. The optical diffraction and thin film effects of high incident angles on the wafer and on the photomask have been studied by many different authors. Extensive previous work has also investigated the impact of high angles upon hard (e.g., F-doped silica) thick (>700&#956;m) pellicles for 157nm lithography, e.g.,. However, the interaction of these high incident angles with traditional thin (< 1&#956;m) organic pellicles has not been widely discussed in the literature. In this paper we analyze the impact of traditional thin organic pellicles in the imaging plane for hyper-NA immersion lithography at the 45nm and 32nm nodes. The use of existing pellicles with hyper-NA imaging is shown to have a definite negative impact upon lithographic CD control and optical proximity correction (OPC) model accuracy. This is due to the traditional method of setting organic pellicle thickness to optimize normally incident light transmission intensity. Due to thin film interference effects with hyper-NA angles, this traditional pellicle optimization method will induce a loss of high spatial frequency (i.e., high transmitted angle) intensity which is similar in negative impact to a strong lens apodization effect. Therefore, using simulation we investigate different pellicle manufacturing options (e.g., multi-layer pellicle films) and OPC modeling options to reduce the high spatial frequency loss and its impact.

Three types of high transmission attenuated phase shift masks were evaluated. The attenuating materials were obtained from commercial and non-commercial sources. Various key performance metrics were investigated. Blanket film transmission and reflection was measured at various wavelengths. Laser durability and cleaning durability were measured. Standard dry etch processes were used for each film and the profile and surface properties were compared. Final mask transmission and phase were also measured. The summarized results show clear benefits of using some high transmission materials relative to others.

American Journal of Agricultural EconomicsVolume 56, Issue 2 p. 465-465 Book Review McCoy, John H., Livestock and Meat Marketing, Westport, The Avi Publishing Co., Inc., 1972, ix + 465 pp. ($21.00) Joseph C. Purcell, Joseph C. Purcell University of Georgia-GriffinSearch for more papers by this author Joseph C. Purcell, Joseph C. Purcell University of Georgia-GriffinSearch for more papers by this author First published: 01 May 1974 https://doi.org/10.2307/1238794AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat No abstract is available for this article. Volume56, Issue2May 1974Pages 465-465 RelatedInformation