Ulvac (Japan)

Ultrasmall-sized circularly polarized (CP) light-emitting devices are highly desired for a wide range of applications. However, most conventional approaches toward CP light-emitting diodes (CP-LEDs) have critical challenges in either device durability, polarization degree, or quantum efficiency to be addressed. Herein, we propose a (0001) InGaN-based CP-LED with a single-layer metasurface directly integrated on the light-emitting surface to convert unpolarized light into CP light. The metasurface is composed of GaN and achieves an efficient CP light exhibiting both a high circular polarization degree of 0.87 and a high transmission efficiency of around 35% for vertically extracted light. The CP-LED consists of inorganic materials that are highly stable under operating conditions, and these findings show that the novel, to the best of our knowledge, CP light source can overcome the conventional trade-off relationship between quantum efficiency and polarization degree.

We developed a low-temperature ohmic contact formation process for N-polar GaN surfaces. Specific-contact-resistances of 9.4 × 10−5 and 2.0 × 10−5 Ω cm2 were obtained using Ti/Al metal stacks on heavily-germanium-doped GaN films, which were deposited at 500 °C and 600 °C using a radical-assisted reactive sputtering method, respectively. The electrode sintering temperature was as low as 475 °C. Carrier concentrations for the 500 °C and 600 °C samples were 2.6 × 1020 and 1.8 × 1020 cm−3, respectively. These results suggest that this method is highly effective in reducing the contact resistance of GaN devices with low thermal budgets.

There are few reported cases in which the spatial distribution of spectral emission coefficients of plasmas from tomographic optical emission spectroscopy measurements is analyzed based on a collisional-radiative model to diagnose the spatial distribution electron temperature of Te and density Ne. This study aimed at in situ diagnosis of process plasma. The spectral radiance of 18 lines-of-sight was measured simultaneously in argon inductively coupled plasma. The spatial distribution of the excited level number density distribution was calculated from the spatial distribution of spectral emission coefficients obtained from spectral tomography calculations. The three-dimensional distribution of Te and Ne was analyzed using a collisional-radiative model from the obtained spatial distribution of the excited levels number density. The effects of power and pressure on the dependence of the spatial distribution of Te and Ne were discussed. Furthermore, data processing methods for spectral tomographic measurements with coarse wavelength resolution were also discussed.

Cancer Immunotherapy Opening new pathway in ex vivo cellular engineering: In article number 2304122, Yaping Chen, Nicolas H. Voelcker, Roey Elnathan, and co-workers showcase the prowess of electroactive nanoinjection, introducing a CAR construct into primary human T cells. This endows them with enhanced attributes, notably the robust capability to inhibit lymphoma cell growth.

We carried out atomic-scale observations of Mg-ion-implanted GaN by transmission electron microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic structures of extended defects and Mg agglomerations that form during post-implantation annealing. The complementary TEM and APT analyses have shown that Mg atoms agglomerate at dislocations that bound extended defects. The concentration of Mg is higher at the dislocations with a larger Burgers vector. This indicates that Mg agglomeration is caused by the pressure at the dislocations. Mg concentration in highly Mg-rich regions is 1 at. %, which exceeds the solubility limit of Mg in GaN. We investigated isothermal and isochronal evolution of the defects by TEM, cathodoluminescence analysis, and positron annihilation spectroscopy. The results indicated that the intensity of donor–acceptor pair emission increases with the annealing temperature and duration and reaches a maximum after elimination of the extended defects with highly Mg-rich regions. These results strongly suggest that such extended defects reduce the acceptor formation and that they as well as the previously reported compensating centers, such as N-related vacancies, can inhibit the formation of p-type GaN. The mechanism by which the extended defects reduce acceptor formation is discussed.

We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 °C for 5 min. We also performed annealing at 1300 °C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand the inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.

In recent years, all-solid-state batteries (ASSBs) have been attracting attention as the next generation batteries for electric vehicles, energy storage systems, etc. Despite the growing interest, there are still many challenges faced in the commercial use of ASSBs. One of the biggest issues is the internal resistance, especially generated at the interface between solid electrolyte and electrode. The internal resistance at the interface limits the charge-discharge cycling performances. In order to solve this issue, it is necessary to examine the chemical and physical interactions at the interface. In this study, we have performed a detailed characterization of a LiPON/LiCoO2 interface using time-of-flight secondary ion mass spectrometry, x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy inverse photoelectron spectroscopy to obtain information on chemical species, chemical compositions, chemical states, and energy band diagrams. These powerful techniques have revealed that an interlayer between LiPON and LiCoO2 was formed due to the temperature rise during the manufacturing process. The temperature rise caused a change of the LiPON network structure and stimulated Co reduction in the LiCoO2 layer near the interface. Energy band diagram analysis suggests that the electron diffusion from LiPON to LiCoO2 may have triggered the reduction of Co. We concluded that the chemical changes that occur at the interface caused an increase in interfacial impedance. Preventing the chemical reduction of Co would be a key to minimize the internal resistance. In this article, the detailed chemical interactions between the LiPON and LiCoO2 layers will be discussed.

Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction diode are experimentally investigated at 223–373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p–-n+ junction structure, in which the depletion layer mainly extends to the p-type region. For above-bandgap illumination, the light is absorbed at the surface p+-layer, and the generated electrons diffuse and reach the depletion layer, resulting in an electron-injected photocurrent. On the other hand, for below-bandgap illumination, the light penetrates a GaN layer and is absorbed owing to the Franz–Keldysh effect in the high electric field region (near the p–n junction interface), resulting in a hole-induced photocurrent. The theoretical (non-multiplicated) photocurrents are calculated elaborately, and the electron- and hole-initiated multiplication factors are extracted as ratios of the experimental data to the calculated values. Through the mathematical analyses of the multiplication factors, the temperature dependences of the impact ionization coefficients of electrons and holes in GaN are extracted and formulated by the Okuto–Crowell model. The ideal breakdown voltage and the critical electric field for GaN p–n junctions of varying doping concentration are simulated using the obtained impact ionization coefficients, and their temperature dependence and conduction-type dependence were discussed. The simulated breakdown characteristics show good agreement with data reported previously, suggesting the high accuracy of the impact ionization coefficients obtained in this study.