- Research Article
- 10.35848/1347-4065/ae187c
Extreme ultra-violet beamline research facility and studies of optical elements for nanolithography
- Dec 01, 2025
- Japanese Journal of Applied Physics
- Lucas Poirier + 16 more +16
Abstract This paper presents the design, capabilities, and recent experimental outcomes of the EBL2 extreme ultraviolet (EUV) beamline research facility developed at TNO for advanced nanolithography component testing. The facility delivers high-brightness 13.5 nm EUV radiation with pulse powers up to 4.2 W (measured from 5 to 22 nm in the exposure chamber) and integrates a suite of in situ metrology tools within a controlled gas environment such as X-ray photoelectron spectroscopy (XPS), nulling ellipsometry, thermal infrared imaging, and EUV photodiodes. These tools enable real-time, non-destructive characterization of photomasks and pellicles under EUV and EUV-induced plasma exposure. The paper details the system’s architecture and highlights its suitability for accelerated lifetime testing. Recent results include the identification of degradation mechanisms in Ru–Ta absorber materials, EUV-induced oxidation in multilayer mirrors, and the absence of radiation-induced outgassing in SiN pellicles. The combination of EUV intensity mapping, ellipsometry and XPS has proven particularly effective in correlating optical and chemical surface changes. These findings support the development of robust materials for next-generation EUV lithography.
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