- Conference Article
- 10.23919/eumc61614.2024.10732340
W-band GaAs LNA chip set for space telecommunications
- Sep 24, 2024
- Pratik D Deshpande + 4 more +4
This paper describes the design and characterisation of two amplifiers from 81GHz to 86GHz. This chip set was designed as a part of a dual-redundant low-noise amplifier module for future W-band communication payload system. The first amplifier was designed using the D007IH GaAs metamorphic HEMT (mHEMT) technology from MACOM (formerly OMMIC) for low noise application. The gain of this amplifier was measured to be approximately 30dB with a noise figure of 2.2dB and a low power consumption of 30mW. The die measures 3.5mm x 1.2mm. The second amplifier was designed for better linearity using the PH10 GaAs process from UMS. The amplifier demonstrated of gain greater than 27dB with a third order output intercept point (OIP3) better than 17dBm. The die measures 4.5x1.5mm.
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