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  • 正帰還回路によるアモルファスワイヤCMOS ICスイッチ形MI磁界センサ
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正帰還回路によるアモルファスワイヤCMOS ICスイッチ形MI磁界センサ

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Abstract

This paper presents a new switch-type MI sensor using amorphous wire and a CMOS inverter IC with a positive feedback loop. The MI (Magneto-Impedance) chip is composed of a single amorphous wire (30 μm diameter and 2 mm length) and two coils (feedback coil and pickup coil). This sensor circuit has high sensitivity and low power consumption. A switching magnetic field is set up using the variable resistance of a positive feedback loop. A switching magnetic field is independent of the frequency and amplitude of the external magnetic field. This on/off MI sensor will be useful for application to automobile anti-lock braking systems (ABS) and to magnetic stripe card readers.

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