1.55 μm silicon-based reflection-type waveguide-integrated thermo-optic 2 × 2 switch

The multiple quantum well (MQW) structure is a good candidate to monolithically integrate lasers and waveguides for realizing photonic integrated circuits. For such an application, selective disordering techniques are required, because these can make it possible to define a waveguide section laterally by inducing local changes in absorption and refractive indices of a MQW structure, which is needed to fabricate waveguide devices including laser. There are several techniques to selectively disorder the I I I -V MQW structures. These are impurity induced disordering [1,2], ion implantation disordering [3, 4], and impurity-free disordering [5-12] followed by thermal treatment. Impurity induced disordering and ion implantation disordering can disorder MQW structure perfectly, but these techniques introduce many defects and high doping concentrations which may deteriorate the performances of waveguide devices because of losses from scatterings by defects and free carrier absorption in the waveguide. Impurity-free techniques employ dielectrics, such as SiO2 or SiN, a capped annealing technique, which employs rapid thermal annealing (RTA) [5-10] or sealed ampoule annealing with an As overpressure [11, 12]. Impurity-free techniques do not disorder MQW structure completely, but disorder it enough to fabricate waveguides and lasers [9-12]. For impurity-free disordering, there are various film growth techniques, such as chemical vapour deposition (CVD) [11], e-beam evaporation [6, 8, 9], sputtering [5], and plasma enhanced chemical vapour deposition (PECVD) [7, 10, 12], which can deposit SiN and/or Si te films on a MQW structure. The behaviour of disordering is affected by the film quality used in the impurity-free disordering technique. Therefore, if an optimum film growth condition can be found by varying process conditions, then selective disordering can be achieved with the same material without surface degradation which should be accompanied in the disordering process without an encapsulation. The characteristics of film deposited by the PECVD technique can be varied by varying process conditions, such as substrate temperature, ratio of reactant gas, and RF power [13]. As a first step to finding a process-dependent impurity-free disordering, we varied the RF power. We carried out impurity-free disordering using a PECVD SiN cap layer with RTA. We found that this technique could disorder the GaAs/A1GaAs MQW structure and the disordering was enhanced by using SiN film grown at high RF power. We used a GaAs/A1GaAs MQW laser structure which was grown by a metal organic chemical vapour deposition (MOCVD) technique on Si-doped n ÷ GaAs substrate. The structure has the following layers from the top of the substrate: 0.5/xm of n (1018 cm -3) GaAs buffer, 1/zm of n (1017 cm -3) A10.4~Ga0.s3As, 0.1/xm of undoped A10.24Ga0.76As, four 7 nm undoped GaAs quantum wells with 10 nm A10.24Ga0.76As barrier, 0.1/xm of undoped A10.24Ga0.76As, 1/zm of p (1017 cm -3) A10.47Ga0.53As, and 0.2/xm of p+ (10 ~8 cm -3) GaAs. In the substrate design, separate confinement design is chosen to enhance the optical confinement in the quantum wells. SiN films were deposited by a PECVD technique for cap layers. We used dilute silane (5% Sill4 in N:) and high purity NH 3 (99.999%) and N2 (99.9999%) as a reactant gas. During plasma deposition, the ratio of partial pressure (PNH3/Psi~,) was kept at 1, total pressure was kept as 120 Pa by adding N2 gas and the substrate temperature was 300 °C. SiN films were grown with various RF powers (0 W, 60 W and 90 W). The thicknesses and refractive indices, for each RF power condition, were determined by an ellipsometer (Gaertner, Ll17) and a surface profiler (Tencor, alpha step 200). Disordering of MQW samples was accomplished by RTA at 850 °C for 35 s in Ar atmosphere with a heating rate of 65 °C/s. Disordering of MQW

Radio frequency magnetron sputtering of Au and low temperature plasma enhanced chemical vapor deposition of silicon nitride for ring ultramicroelectrodes fabrication

A commercial plasma enhanced chemical vapor deposition (PECVD) technique with planetary substrate rotation was used to apply a thin (200-400 nm thick) conformal diamond-like carbon (DLC) coating (known as a diamond-like nanocomposite (DLN)) on LIGA fabricated Ni-Mn alloy parts. The PECVD technique is known to overcome the drawbacks associated with the line-of-sight nature of physical vapor deposition (PVD) and substrate heating inherent with traditional chemical vapor deposition (CVD). The purpose of the present study is to characterize the coverage, adhesion, and tribological (friction and wear) behavior of DLN coatings applied to planar and sidewall surfaces of small featured LIGA Ni-Mn fabricated parts, e.g. 280 {micro}m thick sidewalls. Friction and wear tests were performed in dry nitrogen, dry air, and air with 50% RH at Hertzian contact pressures ranging from 0.3 to 0.6 GPa. The friction coefficient of bare Ni-Mn alloy was determined to be 0.9. In contrast, low friction coefficients ({approx}0.02 in dry nitrogen and {approx}0.2 in 50% RH air) and minimal amount of wear were exhibited for the DLN coated LIGA Ni-Mn alloy parts and test coupons. This behavior was due to the ability of the coating to transfer to the rubbing counterface providing low interfacial shear at the sliding contact; resultantly, coating one surface was adequate for low friction and wear. In addition, a 30 nm thick titanium bond layer was determined to be necessary for good adhesion of DLN coating to Ni-Mn alloy substrates. Raman spectroscopy and cross-sectional SEM with energy dispersive x-ray analysis revealed that the DLN coatings deposited by the PECVD with planetary substrate rotation covered both the planar and sidewall surfaces of LIGA fabricated parts, as well as narrow holes of 300 {micro}m (0.012 inch) diameter.

A core exposed polymer cladded fiber sensor for refractive index (RI) measurement is presented here. The polymer cladding of the multimode silica fiber was removed from a length of 1.5 cm to act as a sensing region. The working principle of the sensor is based on total internal reflection (TIR) phenomenon. The intensity modulation of the transmitted light is measured as a function of liquid refractive index surrounding the sensing region. The sensitivity obtained for the probe is 13.99/RIU. The fabricated sensor is of low cost, easy to fabricate and have high sensitivity which makes it useful in chemical sensing.

Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical properties

Parameter calculations were carried of filtering devices in one of which the phenomenon of the total internal reflection was used. It is expected that these devices may be suitable for imagery of objects in the given narrow spectral bands - spectral imaging (SI) and for obtaining the spectral maps of fast flowing past processes.

The initial results of an investigation of the electrical properties of epitaxial silicon films deposited at low temperatures (i.e., 750°C) by the Plasma-Enhanced Chemical Vapor Deposition (PECVD) technique are presented. The major results indicate that (1) the electron and hole drift mobilities in the epitaxial layers are the same as in bulk silicon for carrier concentrations between 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> and 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> , and (2) high quality p-n junction diodes with no sign of soft breakdown and an ideality factor of 1.10 are obtained at an epitaxial deposition temperature of only 750°C. These p-n diodes represent the first ever reported IC devices fabricated in PECVD epitaxial films.

A low-temperature plasma-enhanced chemical vapour deposition (PECVD) technique has been employed to produce ultrafine tin oxide powders. The structural features and phase transition of this material have been characterized using differential thermal analysis (DTA), thermogravimetric analysis (TGA), X-ray diffraction, infrared spectroscopy (IR) and transmission electron microscopy (TEM). The oxygen absorption behaviour and gassensing properties have been investigated by electron paramagnetic resonance (EPR), X-ray photoelectron spectroscopy (XPS) and electrical measurements. Thick film gas sensors made from such ultrafine SnO2 powders yield better sensitivities than those of normal undoped SnO2 gas sensors. A gas-sensing reaction mechanism is also proposed.

Properties of TiBN coating on the tool steels by PECVD and its applications

Comparison of the properties of a-C:H films deposited from methane and heptane precursors: study of the mechanical, chemical and structural properties

ABSTRACTThe disorder in a-Ge:H thin films produced by the plasma-enhanced chemical vapor deposition (PECVD) technique is strongly reduced when the GeH4 gas is diluted at 1% in H2 and the radiofrequency power density is increased to 0.1 W.cm−2. This improvement is attributed to a better surface passivation by the hydrogen atoms during the growth. However, the poor transport properties indicate a still high defect density. The midgap defect absorption and the Urbach energy, obtained from the photothermal deflection spectra calibrated with optical data, both decrease as a function of the film thickness. The optical defect density is calibrated with EPR spin measurements. For a-Ge:H films thicker than 2 μm, obtained at a deposition temperature Ts ranging from 150 to 250°C, the Urbach tail parameter E° is lower than 50 meV and not sensitive to Ts ; the dangling bond density is around 4.107 cm−3, which is higher by a factor of 100 than in a-Si:H. Preliminary transport measurements indicate that the Fermi level density of states is larger than 1018 cm−3.eV−1.

Diamond-like nanocomposite (DLN) thin films were deposited on pyrex glass substrate using different flow rate of haxamethyldisiloxane (HMDSO) based liquid precursor with nitrogen gas as a glow discharged decomposition by plasma enhanced chemical vapor deposition (PECVD) technique. The significant influence of different precursor flow rates on refractive index and thickness of the DLN films was measured by using spectroscopic filmatrics and DEKTAK profilometer. Optical transparency of the DLN thin films was analyzed by UV-VIS-NIR spectrometer. FTIR spectroscopy, provides the information about shifted bonds like SiC2, Si-C, Si-O, C-C, Si-H, C-H, N-H, and O-H with different precursor flow rate. We have estimated the hardness of the DLN films from Raman spectroscopy using Gaussian deconvolution method and tried to investigate the correlation between hardness, refractive index and thickness of the films with different precursor flow rates. The composition and surface morphology of the DLN films were investigated by X-ray photo electron spectroscopy (XPS) and atomic force microscopy (AFM) respectively. We have analyzed the hardness by intensity ratio (ID/IG) of D and G peaks and correlates with hardness measurement by nanoindentation test where hardness increases from 27.8 μl/min to 80.6μl/min and then decreases with increase of flow rate from 80.6μl/min to 149.5μl/min. Finally, we correlates different parameters of structural, optical and tribological properties like film-thickness, refractive index, light transmission, hardness, surface roughness, modulus of elasticity, contact angle etc. with different precursor flow rates of DLN films.

This article presents a three autocollimation method (TAM) for measuring the refractive index (RI) of optical glass. The popular minimum deviation method (MDM) for RI measurement is accurate, but it is very laborious, since the procedure of determining the minimum possible angle requires many iterations. TAM allows the calculation of RI based on the measurement of the angles of incidence of the beam corresponding to the autocollimation from the mirror located behind the investigated prism, parallel to the entrance face. Measurements must be carried out for all three faces, but it is not necessary to measure the prism angles, since the RI is calculated by solving a system of equations relating the values of unknown parameters. A comparative analysis showed that the accuracy of the proposed method is about 20% higher than the accuracy of classical MDM under the same conditions. A limitation of TAM is the phenomenon of total internal reflection, which limits the measurement range. To implement TAM, a goniometric system with a photoelectric encoder and a set of three reference prisms made of optical glass is used. The experimental absolute error does not exceed ±1·10 −5 , which proves the prospect of using the method for high‐precision RI measurements. TAM can also be used to study the dispersion characteristics of triangular prisms made of optically transparent materials. TAM increases the accuracy and simplifies the RI measurement process compared to MDM.

SOI (Silicon on Insulator) based photonic devices has attracted more and more attention in the recent years. Integration of SOI optical switch matrix with isolating grooves, total internal reflection (TIR) mirrors and spot size converter (SSC) was studied. A folding re-arrangeable non-blocking 4times4 optical switch matrix and a blocking 16times16 matrix with TIR mirrors and SSC were fabricated on SOI wafer. The performances, including extinction ratio and the crosstalk, are better than before. The insertion loss and the polarization dependent loss (PDL) at 1.55mum increase slightly with longer device length, more bend and intersecting waveguides. The insertion losses decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1mus and 2.3mus, respectively

Hexamethyldisiloxane (HMDSO) is an organosilicon compound with a modifiable bandgap, depending on the deposition conditions. This material has many unique properties due to its stability, low toxicity, and strong adhesion, making it useful as a protective barrier against corrosion, moisture, and oxidation. In this work, HMDSO films were deposited on glass substrates by the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at different deposition times. The optical properties of HMDSO films, such as dielectric permittivity, refractive index, extinction and absorption coefficients, and band gap energy, are inferred from transmission and reflection spectra. As the deposition time increased, the real part of the dielectric constant, the refractive index, and the bandgap energy showed a decrease, dropping from 4.24 to 3.40, from 2.06 to 1.84, and from 2.85 eV to 2.03 eV, respectively. The latter result is determined using classical models such as the O’Leary-Johnson-Lim (‘OJL’) interband transition and the harmonic oscillator model. HMDSO and Silver are used in this study for the fabrication of optical filters using two types of structures, a multiple cavity metal–dielectric (MCMD) and the Fabry–Perot structure. The silver layers are deposited by a sputtering process. The MCMD optical filter shows a higher transmittance of about 30%, but a wide range of wavelengths is transmitted. In contrast, the Fabry–Perot filter showed high contrast but a lower transmittance of about 20%.