A Simulation Study for Typical Design Rule Patterns in 5 nm Logic Process with EUV Photolithographic Process

This paper describes a simulation to establish the extent to which reliance on non-dispatchable energy sources, particularly wind generation, could in the future be extended beyond accepted norms, by utilizing the distributed battery capacity of an electric vehicle fleet for storage. The notion of exploiting the distributed battery capacity of an electric vehicle fleet as grid storage is not new. However, this simulation study specifically examines the potential impact of the idea in the New Zealand context. The simulation makes use of real and projected data in relation to vehicle usage, full potential wind generation capacity and availability, taking into account weather variation, and typical daily and seasonal patterns of electricity usage. It differs from previous studies in that it is based on individual vehicles, rather than a bulk battery model. At this stage, the simulation does not take into account local or regional flows. A more detailed analysis of these localized effects will follow in subsequent stages of the simulation work.

As design rules shrink to meet the needs of advanced chips, the allocation of allowable errors between sources gets ever more critical. This paper will examine the error sources and budgets for current technologies and project the requirements for future 64 and 256 megabit generations. The emphasis will be on overlay and critical dimension as a function of design rule generation for the photomask, the photolithographic process and the etching process.

In the photo-lithography process, a mask is one of the most important items because its imperfection induces the variation of critical dimension (CD) and becomes the source of the CD error on the wafer. The CD error amplification is denoted by using Mask Error Enhancement Factor (MEEF) [1][2] and related to the photo-lithography process. Nowadays MEEF increases conspicuously as the devi ce shrinks so fast. Therefore the mean -to-target (MTT) and the uniformity of the mask CD are very important factors to reduce the effect of high MEEF. In general, the process constant k 1 factor has been cited to denote the capability of the photo process for a certain resolution. However MEEF can describe the process difficulty well because it depend s on the layout design and th e process conditions although the designed patterns have the same design rule. In this study the MEEFs of sub-80nm DRAM patterns [3] are discussed with the process constant k 1 , MTT and the mask CD uniformity. And then the results are compared with the simulation and the wafer process data. Considering the mask specification calculated from the wafer specification and MEEF, the photo tool and process upgrade is necessary to reduce MEEF and to have the mask fabrication tolerance. Key words: MEEF, low k

<p>Data integration and harmonization has been a tedious task ever since. The increase of available data in volume and variety has further increased the need for a thorough data integration. Furthermore, the application of more and more automatic algorithms stresses the need for a sensible geo data platform to avoid the ‘garbage in, garbage out’ trap and to allow for a meaningful data analysis. We reviewed different projects and learned about various needs and constraints of joint spatial research data infrastructures from local to cloud based deployments. Typically, these systems are not designed from scratch and existing systems need to be integrated or interfaced. As a result or arising from the need to support the sovereignty of distributed data centers, modern infrastructures need to be capable to support federated set-ups. Often these research data infrastructures shall not only be used to store raw data for scientists, but will also provide results (maps, derived data products, tools and applications) to the public. This goes along with the need for access delegation (e.g. OAuth). A special focus is put on the provision of the joint datasets for machine learning applications. In order to facilitate efficient learning and prediction a ML processing environment needs to be aligned with the data infrastructure. </p><p>We will present commonalities among these infrastructures and outline typical design patterns. A spatial data infrastructure based on open source software components that can be deployed on the cloud will be introduced. It features open standardized interfaces and services for easy adaptation and connectivity.</p>

This paper presents an efficient application of hot carrier reliability simulation to 0.18 /spl mu/m and 0.14 /spl mu/m gate length logic products. Using analysis of simple primitive inverter cells, a design rule was developed in restricting signal rise time, and delay libraries of actual products which were screened to check whether the rise time restrictions were met. At 200 MHz, maximum rise time (0-100%) triseMAX was 0.8 ns (17% of duty) under /spl Delta/td/td=5%. For a 800,000 net product, only 25 simulations were done (each less than one minute CPU time) for the internal devices with screening done for this logic process. 30 nets were caught, but judged reliable due to their reduced duty.

An intriguing phenomenon in plant development is the timing and positioning of lateral organ initiation, which is a fundamental aspect of plant architecture. Although important progress has been made in elucidating the role of auxin transport in the vegetative shoot to explain the phyllotaxis of leaf formation in a spiral fashion, a model study of the role of auxin transport in whorled organ patterning in the expanding floral meristem is not available yet. We present an initial simulation approach to study the mechanisms that are expected to play an important role. Starting point is a confocal imaging study of Arabidopsis floral meristems at consecutive time points during flower development. These images reveal auxin accumulation patterns at the positions of the organs, which strongly suggests that the role of auxin in the floral meristem is similar to the role it plays in the shoot apical meristem. This is the basis for a simulation study of auxin transport through a growing floral meristem, which may answer the question whether auxin transport can in itself be responsible for the typical whorled floral pattern. We combined a cellular growth model for the meristem with a polar auxin transport model. The model predicts that sepals are initiated by auxin maxima arising early during meristem outgrowth. These form a pre-pattern relative to which a series of smaller auxin maxima are positioned, which partially overlap with the anlagen of petals, stamens, and carpels. We adjusted the model parameters corresponding to properties of floral mutants and found that the model predictions agree with the observed mutant patterns. The predicted timing of the primordia outgrowth and the timing and positioning of the sepal primordia show remarkable similarities with a developing flower in nature.

Sustainable High-rises

We study the asymptotic behavior of a cooperative scheme operating in amplify-and-forward (AF) mode when the number of relay terminals tends to infinity. An optimal code design rule is derived through the investigation of a pairwise error probability (PEP) expression. The design rule is based on an Euclidean-distance-type metric including some scaling terms due to different path loss and shadowing effects associated with underlying relay links. Since the design criterion is channel-dependent, it does not allow a practical code design. However, we further demonstrate that "classical" Euclidean distance can be used as a sub-optimal solution for realizing cooperative diversity advantages which we further verify through our simulation study. Our simulation results also indicate that distributed space-time codes based on Euclidean distance yield good results even for a small number of relays.

As design rules shrink and process windows become smaller, strict process control is becoming increasingly important. The two primary process parameters in the photolithography process, exposure dose and focus, require strict control in order to maintain the photoresist profile. This paper presents the second stage of an approach towards monitoring the semiconductor photolithogprhay process by using critical dimension-scanning electron microscopy. In the former paper, we propsed a method that quantifies the photoresist pattern profile variation caused by dose or focus variation. In this paper, a new method for estimating the variation in exposure dose and focus is presented. Top-down SEM imagse are intrinsically limited in the inability to observe the re-entrant profile. This limitation has been overcome through the use of two tyeps of common patterns: island patterns and window patterns. Island patterns, such as isolated line patterns, have a tapered profile for negative defocus, while window patterns, such as isolated spaces patterns, have an inverse tapered profile for negative defocus. Using both types of patterns allows the focus deviation to be monitored, whether positive or negative defocus. The behavior of the two types of patterns is considered here based on photolithography simulation, and a new algorithm for estimating the exposure dose and focsu variation is proposed.

Panel Fan-out (P-FO) packaging technology is known as a new generation FO technology because of high throughout and low cost superiority comparing to first-generation Fan-out Wafer Level Package/Packaging (FO-WLP). However, the process induced warpage is one critical issue needed to be solved. In this paper, the P-FO packages were assembled on a carrier in size of 370 × 470 mm like a panel, and the focus is how to reduce the warpage of FO panel in several major processes, such as lamination, photolithography and ball placement (BP) process through numerical simulation and experimental study. The FO panel encapsulated by lamination film has a large warpage of 9 mm after lamination film post-curing and 4 mm after full reconstruction process completion respectively, which is primarily attributed to the Coefficient of Thermal Expansion (CTE) mismatch of constituent materials. An effort on material selection for CTE mismatch purpose was applied to reduce the panel warpage to the extent of 3 mm and 1 mm, after lamination film post-curing and full reconstruction process respectively. Besides, the CTE effect of dielectric layer and metal trace on panel warpage before ball placing is found to be more than 1 mm. An approach of reducing carrier size is further proposed to control the warpage within 1 mm for BP process.

Owing to their outstanding electrical/electrochemical performance, operational stability, mechanical flexibility, and decent biocompatibility, organic mixed ionic-electronic conductors have shown great potential as implantable electrodes for neural recording/stimulation and as active channels for signal switching/amplifying transistors. Nonetheless, no studies exist on a general design rule for high-performance electrochemical diodes, which are essential for highly functional circuit architectures. In this work, generalizable electrochemical diodes with a very high current density over 30 kA cm-2 are designed by introducing an asymmetric active layer based on organic mixed ionic-electronic conductors. The underlying mechanism on polarity-sensitive balanced ionic doping/dedoping is elucidated by numerical device analysis and in operando spectroelectrochemical potential mapping, while the general material requirements for electrochemical diode operation are deduced using various types of conjugated polymers. In parallel, analog signal rectification and digital logic processing circuits are successfully demonstrated to show the broad impact of circuits incorporating organic electrochemical diodes. It is expected that organic electrochemical diodes will play vital roles in realizing multifunctional soft bioelectronic circuitry in combination with organic electrochemical transistors.

Isolated and dense patterns were formed at process layers from gate through to back-end on wafers using a 90 nm logic device process utilizing ArF lithography under various lithography conditions. Pattern placement errors (PPE) between AIM grating and BiB marks were characterized for line widths varying from 1000nm to 140nm. As pattern size was reduced, overlay discrepancies became larger, a tendency which was confirmed by optical simulation with simple coma aberration. Furthermore, incorporating such small patterns into conventional marks resulted in significant degradation in metrology performance while performance on small pattern segmented grating marks was excellent. Finally, the data also show good correlation between the grating mark and specialized design rule feature SEM marks, with poorer correlation between conventional mark and SEM mark confirming that new grating mark significantly improves overlay metrology correlation with device patterns.

A high-performance 1024/spl times/1-bit static random access memory has been designed and fabricated using an epitaxial GaAs direct coupled logic process. Design rules include 4-/spl mu/m interconnect metallization lines and spaces with 2/spl times/4-/spl mu/m/SUP 2/ vias. MESFETS have 1-/spl mu/m gate length and a self-aligned source and drain. A minimum address access time of 1.7 ns has been observed.

Abstract. The paper presents a design of squeeze film air journal bearing based on the design rules derived from CFX and FEA simulation study of an air film in between two flat plates, one of which was driven in a sinusoidal manner. The rules are that the oscillation frequency should be at least 15 kHz and that the oscillation amplitude be as large as possible to ensure a greater film thickness and to allow the bearing to reach its stable equilibrium quickly. The proposed journal bearing is made from AL2024-T3, of 20.02 mm outer diameter, 600 mm length and 2 mm thickness. Three 20-mm long fins are on the outer surface of the bearing tube and are spaced 120° apart; three longitudinal flats are milled equi-spaced between the fins and two piezoelectric actuators are mounted lengthwise on each flat. Such a design produces a modal shape on the bearing tube which resembles a triangle. When excited in this mode at the frequency of 16.37 kHz, and a voltage of 75 V AC with 75 V DC offset acting on the piezoelectric actuators, the air gap underneath of the bearing tube behaves as a squeeze air film with a response amplitude of 3.22 μm. The three design rules were validated by experiments.

Air-suspension of transmission-line structures using microelectromechanical systems (MEMS) technology provides the effective means to suppress substrate losses for radio-frequency (RF) signals. However, heating of these lines augmented by skin effects can be a major concern for RF MEMS reliability. To understand this phenomenon, a thermal energy transport model is developed in a simple analytical form. The model accounts for skin effects that cause Joule heating to be localized near the surface of the RF transmission line. Here, the model is validated through experimental data by measuring the temperature rise in an air-suspended MEMS coplanar waveguide (CPW). For this measurement, a new experimental methodology is also developed allowing direct current (dc) electrical resistance thermometry to be adopted in an RF setup. The modeling and experimental work presented in this paper allow us to provide design rules for preventing thermal and structural failures unique to the RF operation of suspended MEMS transmission-line components. For example, increasing the thickness from 1 to 3 mum for a typical transmission line design enhances power handling from 5 to 125 W at 20 GHz, 3.3 to 80 W at 50 GHz, and 2.3 to 56 W at 100 GHz (a 25-fold increase in RF power handling)