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  • Actual stresses around TSV in whole 3D-SiP under reflow or power ON/OFF thermal load
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  • https://doi.org/10.1109/impact.2012.6420223Copy DOI Icon

Actual stresses around TSV in whole 3D-SiP under reflow or power ON/OFF thermal load

  • Oct 1, 2012
  • Takahiro Kinoshita +7 more
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Abstract

The relation between maximum temperature in Si chip and varied heat transfer coefficients of heat sink is shown in Fig. 5. Maximum temperature for device operation was assumed to be 85 °C. Heat transfer coefficient of heat sink at device operation is estimated to be 4.5W/m2K by quadratic approximation of least square method. Maximum temperature of 3D SiP was almost 85 °C and uniform temperature distribution.

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