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Advanced carbon-based material C[sub 60] modification using partially ionized cluster and energetic beams

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Abstract

Two processes have been undertaken using Partially ionized cluster deposition (PICBD) and energetic ion bombardment beams deposition (IBD) respectively. C60 films deposited by PICBD at V=0 and 65 V, which result in highly textured close-packed structure in orientation (110) and being more polycrystalline respectively, the resistance of C60 films to oxygen diffusion contamination will be improved. In the case of PICBD, the ionized C60 soccer-balls molecules in the evaporation beams will be fragmented in collision with the substrate under the elevated accelerating fields Va. As a new synthetic IBD processing, two low energy (400 and 1000 eV) nitrogen ion beams have been used to bombard C60 films to synthesize the carbon nitride films.

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