All-optical XOR and AND logic gates based on optically pumped semiconductor optical amplifiers

Band-gap shrinkage is an important effect in semiconductor lasers and optical amplifiers. In the former it leads to an increase in the lasing wavelength and in the latter an increase in the gain peak wavelength as the bias current is increased. The most common model used for carrier-density dependent band-gap shrinkage is a cube root dependency on carrier density, which is strictly only true for high carrier densities and low temperatures. This simple model, involves a material constant which is treated as a fitting parameter. Strained InGaAsP material is commonly used to fabricate polarization insensitive semiconductor optical amplifiers (SOAs). Most mathematical models for SOAs use the cube root bandgap shrinkage model. However, because SOAs are often operated over a wide range of drive currents and input optical powers leading to large variations in carrier density along the amplifier length, for improved model accuracy it is preferable to use band-gap shrinkage calculated from knowledge of the material bandstructure. In this letter the carrier density dependent band-gap shrinkage for strained InGaAsP is calculated by using detailed non-parabolic conduction and valence band models. The shrinkage dependency on temperature and both tensile and compressive strain is investigated and compared to the cube root model, for which it shows significant deviation. A simple power model, showing an almost square-root dependency, is derived for carrier densities in the range usually encountered in InGaAsP laser diodes and SOAs.

Development of modern optical fiber networks puts an increasing demand on the optical hardware. All-optical signal processing components enable the highest switching rates and allow all-optical regeneration of pulse streams without converting the optical signal into electrical current. The subject of our research is self-switching in a Mach-Zehnder interferometer (MZI) and its applications in optical telecommunication networks. In this device, light injected in one of the input ports is unequally distributed over the two interferometer arms. Due to the intensity dependent refractive index in the interferometer arms, there can be a nonlinear phase shift induced between the optical signals of unequal intensities. The two signals therefore interfere destructively or constructively depending on the input power: in this way we obtain nonlinear self-switching. Two mechanisms of nonlinear phase shifting were considered: active, based on semiconductor optical amplifiers (SOAs), and passive, based on quantum dots (QDs). Interferometers of two types were developed: 2-to-2 (two input ports and two output ports) and 2-to-1 (two input ports and one output port). The 2-to-2 SOA-MZIs based on self-switching have been investigated for two applications. One of them is the pattern effect compensator. If SOAs are employed for all-optical signal amplification, e.g. in optical access networks, an unwanted pulse distortion (known also as the pattern effect) takes place, as a result of the SOA gain saturation. Our component allows pattern-free amplification of the optical signals at bitrates up to 20 Gb/s. At 10 Gb/s it shows an extended input power range (up to 7 dB improvement) and comparable gain, which makes it suitable to be used as an optical amplifier. Another application of the 2-to-2 SOA-MZI is a 2R-regenerator. Optical amplifiers used in long distance optical links add noise to the optical signal, causing signal degradation. The signal can be regenerated by passing it through an optical gate with a nonlinear transfer function. The 2-to-2 SOA-MZI has such a nonlinear transfer function. The regeneration capabilities were demonstrated at 2.5 Gb/s by an improvement of the receiver sensitivity of about 2.5 dB. The dynamic characterization of the chips was carried out in a close cooperation with the research group COM at the Technical University of Denmark within the ePIXnet "network of excellence". The 2-to-1 MZI based on self-switching can be used as a low-loss optical combiner. An essential function in optical fiber networks is the combining of optical signals. A serious disadvantage of the conventional type of combiners used in the networks is that they let only half of the power (3 dB) through. In order to compensate for this loss, passive optical combiners are often used in combination with an in-line SOA. The first realization of the low-loss optical combiner uses SOAs as active phase shifters. Such an active low-loss combiner shows an improvement of transmission of over 2 dB compared to a conventional combiner with an in-line SOA. It is therefore expected that the output optical signal-to-noise ratio of the self-switching SOA-MZI is more than 2 dB better than that of a conventional combiner with an in-line SOA. While for the pattern effect compensator and the 2R-regenerator SOAs are used not only for inducing the nonlinear phase shift, but also for sufficient amplification, for the low-loss optical combiner the preferred nonlinear effects should be passive: combination of the signal is a passive function. Therefore, the second realization is based on a novel material, quantum dots. QDs provide improved all-optical nonlinearities resulting in a very small switching energy and large refractive index changes. Such a passive 2-to-1 QD-MZI based on self-switching showed an improvement up to 1.7 dB with respect to a conventional combiner. These improvements have a huge effect on e.g. the power budget in passive optical networks, where a large number of splitting stages are required. The Mach-Zehnder interferometers were realized in the InP/InGaAsP semiconductor material system, which is perfectly suitable for the integration of the photonic integrated circuits for the telecommunication applications. In order to realize both active components (such as e.g. SOAs) and passive components (such as e.g. waveguides, couplers), an active-passive integration technique was applied. This integration was realized in a close cooperation between JDS Uniphase Eindhoven and the COBRA Research Institute. It employs a three-step metal-organic vapor-phase epitaxy regrowth process. The quantum dot material was grown within the COBRA Research Institute. Our MZIs use a ridge waveguide design, for which a reactive ion etching process was developed in the COBRA cleanroom. As a result of photonic integration our integrated Mach-Zehnder interferometers have very small dimensions: less than a square millimeter.

Future optical networks may require both wavelength conversion and bit shape regeneration in an all-optical domain. The possibility of pulse reshaping while providing wavelength conversion may support new demands over medium and large distances links (Kelly, 2001). Indeed, during propagation the optical data signal suffers deterioration due to the amplified spontaneous emission (ASE) from optical amplifiers, pulse distortion from intrinsic dispersion, crosstalk, and attenuation. All-optical regenerators may be important components for the restoration of these signals, providing complexity and cost reductions with the avoidance of optoelectronic conversions. The regeneration could be 2R (reamplification and reshaping) or 3R, which also provide retiming to solve jitter (Simon et al., 2008). Several 3R regenerators using the semiconductor optical amplifier (SOA) have been proposed, such as cascaded SOAs setups (Funabashi et al., 2006) or SOA based MachZehnder interferometers (MZI) (Fischer et al., 1999). However for small and medium distances systems, where the signal amplitude noise and distortions form the main problem and where jitter has fewer magnitudes, the simpler 2R processes can be adequate to keep signal quality (Simon et al., 1998). In addition, the SOA is a helpful device for both 2R-regeneration (Ohman et al., 2003) and wavelength conversion (Durhuus et al., 1996). Several techniques for 2R-regeneration based on SOAs have been proposed and tested, for example by using four-wave mixing (FWM) (Simos et al., 2004), cross-gain modulation (XGM) (Contestabile et al., 2005), integration within MZI (Wang et al., 2007), multimode interferometric SOA (Merlier et al., 2001), cross-phase modulation (XPM) with filtering (Chayet et al., 2004), and feed forward technique (Conforti et al., 1999). However, these techniques require complex designs and involve critical operation points, even the simplest ones based on XGM features. In addition, most of these techniques are not capable of wavelength conversion and regeneration simultaneously. Recently a regenerator based on cross-gain modulation was proposed using one SOA for wavelength conversion (in a counter-propagating mode) and another deeply saturated SOA (synchronized by an optical delay line) to achieve cross-gain compression (Contestabile 2005). This efficient approach has similarities with the all-optical feed-forward techniques. In addition, this regenerator could not done wavelength conversion if the wavelength of the

Fiber optic amplifier is a field of new growing interest owing to its application to the optical metro and access networks for amplifying a weak optical signal. In order to design short-fiber-length and broadband optical amplifier, a new amplified fiber with semiconductor inner cladding has been presented. The semiconductor optical amplifier (SOA) is usually pumped by electric currents, but an optical pump is used to the semiconductor inner cladding fiber amplifier in our work. The rate equation is derived in the optical pumped amplifier, and the properties of the amplifier are analyzed. Comparison with conventional optical pumped amplifier, the semiconductor inner cladding fiber amplifier can be pumped by a wide-band optical pumped power, and high pump efficiency can be designed.

The wavelength dependent transmission performance of adaptively modulated optical OFDM (AMOOFDM) signals is investigated, for the first time, over optical amplification- and chromatic dispersion compensation-free IMDD SMF systems using semiconductor optical amplifiers (SOAs) as intensity modulators. A theoretical SOA model describing both optical gain saturation and gain spectral dynamics is developed, based on which optimum SOA operating conditions are identified for various wavelengths varying in a broad range of 1510 nm- 1590 nm. Results show that, SOA intensity modulators operating at the identified optimum conditions enable the realization of colourless AMOOFDM transmitters within the aforementioned wavelength window. Such transmitters are capable of supporting >30 Gb/s signal transmission over 60 km SMFs.

The development of semiconductor optical amplifiers (SOAs) happened soon after the invention of the semiconductor laser. A SOA is very similar to a semiconductor laser without (or with negligible) optical facet feedback. An incoming signal injected into the SOA propagates along its optical waveguide and is amplified by stimulated emission. The optical gain is achieved by inverting the carrier population in the active region via electrical pumping. During the 1990s due to the development of the erbium doped optical amplifier (EDFA) the popularity of the SOA as a linear amplifier declined as the EDFAs provided higher gain without the detrimental nonlinearities associated with an SOA.

This volume of trends in optical amplifiers and their applications includes such topics as: progess in optical fibre amplifiers; reliability of high-power pump lasers for erbium-doped fibre amplifiers; and inP-based optical switch array using semiconductor optical amplifiers.

Recent progress in optical devices for mode division multiplex transmission system

A semiconductor optical amplifier (SOA) is a versatile optical component with multiple functions, e.g., optical amplification, detection, and modulation.1 SOAs with these functions have been applied to transmission systems as full-duplex transceivers-’ and as transceivers with optical gain.3 In this paper we demonstrate still another application of SOAs as an important network element—an add—drop multiplexer (ADM). The ADM function of an SOA was implemented in a digitally modulated subcarrier-multiplexed system with the general configuration shown in Fig. 1(a). This dual-bus system can be used for local- area-network interconnections or linear SONET digital-loop- carrier ADM applications.

Four-wave mixing (FWM) in semiconductor optical amplifiers (SOAs) has several important features, such as, high speed and high FWM conversion efficiency as well as optical demultiplexing (DEMUX) (Mecozzi et al., 1995; Mecozzi & Mrk, 1997; Das et al., 2000). The are several applications of FWM in SOAs for all-optical devices, such as, wavelength converters (Vahala et al., 1996), optical samplers (Inoue & Kawaguchi, 1998), optical phase conjugators (Kikuchi & Matsumura, 1998) and optical multiplexers/demultiplexers (Kawanishi et al., 1997; Kawanishi et al., 1994; Morioka et al., 1996; Uchiyama et al., 1998; Tomkos et al., 1999; Kirita et al., 1998; Buxens et al., 2000) have been demonstrated for optical communication systems. When a pulse of a time-multiplexed signal train (for example, a probe pulse) and a pump pulse are injected simultaneously into an SOA, gain and refractive index in the SOA are modulated and an FWM signal is generated by the modulations. Thus, we can obtain a demultiplexed signal as an FWM signal at the output of SOA. All-optical demultiplexing has been experimentally demonstrated up to 200 Gbit/s (Morioka et al., 1996). Tomkos et al., (Tomkos et al., 1999) suggested a number of ways to improve the performance of the dual-pump demultiplexer at 40 Gbit/s as follows; adjustment of the input wavelengths at the peak gain wavelength of the SOA under saturation conditions, the use of higher pump power at the input of the device, or/and the use of pulsed pumps with short pulsewidths. For the higher bit-rate, the overlap of the input to the FWM signal pulses may appear both in the time and spectral domain. The pattern effect may also appear in the FWM signal due to the slow components of the optical nonlinearities in SOAs (Saleh & Habbab, 1990). These effects degrade the usefulness of the FWM in SOAs as a practical DEMUX device in optical network/ communication systems. Therefore, it is very important to analysis the optical DEMUX characteristics based on FWM in SOAs for the ultrafast multi-bit input optical pulses.

High power semiconductor laser diodes and optical power amplifiers have important roles in solid state laser and optical fiber pumping, optical storage and recording, and can serve as efficient sources for medical and display applications. These high power devices must be mounted in the epitaxy-side down configuration for good heat transfer and so require a well-controlled, high yield, void-free, die attach method. We have developed a method which consistently yields absolute thermal resistances of 1.5/spl deg/C/W (/spl plusmn/4%) on tapered angle facet semiconductor optical amplifiers and specific thermal resistances of 0.004 K/spl middot/cm/sup 2//W for lasers and optical amplifiers mounted on oxygen-free high conductivity (OFHC) copper heatsinks. Our method has wide process margins, exhibits excellent yield (>95%, N=30) and repeatability, relaxes the requirements for highly polished heatsinks, and is well suited for laser die attach to heatspreading diamond submounts or advanced composite materials.

One of the most important technical advances in fiber optic telecommunication systems has been the optical fiber amplifier (OFA). The use of an all-optical fiber optic amplifier instead of a semiconductor optical amplifier has many inherent advantages. For example, the most popular erbium-doped fiber amplifiers (EDFAs) have a broad range of optical amplification in the 1550-nm window; these erbiumdoped fibers are easy to incorporate directly into an all—fiber optic telecommunication system. Today the erbium-doped silica fibers are the most common rare-earth (RE)-doped fiber amplifiers, as they have high gain and low noise. EDFAs are quite versatile in that they may be used as preamplifiers, in-line and booster amplifiers, as well as sources. They can provide more than 20 dB of gain across a broad wavelength band, which enables them to be extremely useful as components in dense wavelength-division multiplexed (DWDM) systems. Additionally, they may be pumped with 800-, 980-, and 1480-nm sources and their quantum efficiency can be quite high.

Chapter 5 - Optical amplifiers

Broad-band semiconductor optical amplifiers

We study the interplay between coherent light-matter interactions and non-resonant pulse propagation effects when ultra-short pulses propagate in room-temperature quantum-dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi-oscillations are absent, highlight the contribution of two-photon absorption (TPA), and its accompanying Kerr-like effect, as well as of linear dispersion, to the modification of the pulse complex electric field profile. These effects are incorporated into our previously developed finite-difference time-domain comprehensive model that describes the interaction between the pulses and the QD SOA. The present, generalized, model is used to investigate the combined effect of coherent and non-resonant phenomena in the gain and absorption regimes of the QD SOA. It confirms that in the QD SOA we examined, linear dispersion in the presence of the Kerr-like effect causes pulse compression, which counteracts the pulse peak suppression due to TPA, and also modifies the patterns which the coherent Rabi-oscillations imprint on the pulse envelope under both gain and absorption conditions. The inclusion of these effects leads to a better fit with experiments and to a better understanding of the interplay among the various mechanisms so as to be able to better analyze more complex future experiments of coherent light-matter interaction induced by short pulses propagating along an SOA.