Applications of All-Optical Signal Processing in Modern Optical Communications

We have developed a theory of high-speed operation of quantum dot (QD) semiconductor optical amplifiers (SOAs), and showed that pattern-effect-free amplification of pulse trains, cross gain modulation (XGM) and cross phase modulation (XPM) can take place in QD SOA in the regime with maximum gain. Formulas, which relate the maximum bit-rate for the pattern-effect-free operation and the average SOA output power to the SOA pump current density, were derived. XGM without pattern effect can be realized in the regime with maximum gain due to spectral hole burning effects. Possibility of ultrafast frequency conversion and demultiplexing of data pulse streams through this nonlinearity is illustrated. Expression for the nonlinear refractive index η nl due to spectral hole burning in QD structure was obtained. The value of η nl in QD SOAs can be by 4-5 orders larger than η nl in silica; and efficient ultrafast XPM without pattern effects can be carried out in QD SOA through this nonlinearity. In whole, usage of the regime with maximum gain in QD SOAs can lead to development of new generation of high-speed devices for ultrafast optical processing and communications.

The small-signal cross-gain modulation (XGM) characteristics of a p-doped quantum-dot (QD) semiconductor optical amplifier (SOA) are measured and compared with a theoretical model. The measured small-signal XGM responses show an average 3-dB bandwidth of 3.5 GHz and have no significant dependence on the pump-probe detuning wavelength. This indicates that the main XGM mechanism of the p-doped QD SOA is the total carrier density change rather than spectral hole burning. The measured small-signal conversion efficiency is compared with a theoretical model, which is derived from rate equations for QD SOAs. Based on our theoretical results, we find that the reduced intersubband (from the QD excited to ground state) carrier relaxation time due to p-type doping will decrease the small-signal 3-dB XGM bandwidth of QD SOAs

P-doped and undoped quantum dot (QD) semiconductor optical amplifiers (SOAs) having a similar chip gain of 22-24 dB are compared with regard to their static and dynamic characteristics. Amplified spontaneous emission (ASE) spectra reveal the influence of p-doping on the gain characteristics and the temperature stability. In contrast to QD lasers, p-doping does not significantly increase the thermal stability of QD SOAs. The static four-wave mixing efficiency is larger and more temperature stable in undoped devices, leading to a maximum chip conversion efficiency of -2 dB. Small-signal cross-gain modulation (XGM) experiments show an increase in the small-signal bandwidth from 25 GHz for the p-doped SOAs to 40 GHz for the undoped QD SOAs at the same current density. P-doped QD SOAs also achieve small-signal bandwidths beyond 40 GHz but at a larger bias. The XGM is found to be temperature stable in the range of 20°C to 40°C.

We study the interplay between coherent light-matter interactions and non-resonant pulse propagation effects when ultra-short pulses propagate in room-temperature quantum-dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi-oscillations are absent, highlight the contribution of two-photon absorption (TPA), and its accompanying Kerr-like effect, as well as of linear dispersion, to the modification of the pulse complex electric field profile. These effects are incorporated into our previously developed finite-difference time-domain comprehensive model that describes the interaction between the pulses and the QD SOA. The present, generalized, model is used to investigate the combined effect of coherent and non-resonant phenomena in the gain and absorption regimes of the QD SOA. It confirms that in the QD SOA we examined, linear dispersion in the presence of the Kerr-like effect causes pulse compression, which counteracts the pulse peak suppression due to TPA, and also modifies the patterns which the coherent Rabi-oscillations imprint on the pulse envelope under both gain and absorption conditions. The inclusion of these effects leads to a better fit with experiments and to a better understanding of the interplay among the various mechanisms so as to be able to better analyze more complex future experiments of coherent light-matter interaction induced by short pulses propagating along an SOA.

In this paper, we propose to use a semiconductor optical amplifier (SOA) in the optical network unit (ONU) to improve the loss budget in time and wavelength division multiplexed-passive optical network (TWDM-PON) systems. The SOA boosts the upstream signal to increase the output power of the electro-absorption modulated laser (EML) and simultaneously pre-amplifies the downstream signal for sensitivity improvement. The penalty caused by cross gain modulation (XGM) effect is negligible due to the low extinction ratio (ER) of upstream signal and the large wavelength difference between upstream and downstream links. In order to achieve a higher output power, the SOA is driven into its saturation region, where the self-phase modulation (SPM) effect converts the intensity into phase information and realizes on-off-keying (OOK) to phase-shifted-keying (PSK) format conversion. In this way, the pattern effect is eliminated, which releases the requirement of gain-clamping on SOA. To further improve the loss budget of upstream link, an Erbium doped fiber amplifier (EDFA) is used in the optical line terminal (OLT) to pre-amplify the received signal. For the downstream direction, directly modulated laser (DML) is used as the laser source. Taking advantage of its carrier-less characteristic, directly modulated signal shows high tolerance to fiber nonlinearity, which could support a downstream launch power as high as + 16 dBm per channel. In addition, the signal is pre-amplified by the SOA in ONU before being detected, so the sensitivity limitation for downstream link is also removed. As a result, a truly passive symmetric 40-Gb/s TWDM-PON was demonstrated, achieving a link loss budget of 51 dB.

Semiconductor optical amplifiers (SOAs) as nonlinear devices always work in the gain saturation region. Therefore, the saturation gain is an important parameter of SOAs. However, the existing theoretical gain formula greatly deviates from the experimental measurements. We find experimentally that the effect of the absorption loss on the SOA gain cannot be neglected, especially when the SOA is biased into the saturation region. In this paper, considering the influence of the absorption loss, we propose a modification to the SOA gain formula in common use. We are able to validate the revised formula against the experimental measurements. Thus the theoretical formula after modification can be accurately applied to evaluate the SOA gain in practice.

Summary form only given. An overview is presented of the progress in design and characteristics of semiconductor optical amplifiers (SOA) for 1310, 1400 and 1550 nm operation in fiber optical transmission systems. The technology and performance of SOAs will be discussed with respect to optical gain, noise figure, saturation output power and polarization (in-) dependent behavior. The use of both strained quantum wells and bulk tensile material will be discussed in view of obtaining polarization independent behavior. Gain clamping in SOAs has been shown to improve the linearity performance especially for analogue signal transmission. The SOA technology has been demonstrated for optical pre-amplification, in-line application and optical booster applications. DWDM experiments using SOAs in up to 20 Gbit/s systems in short- and medium-distance transmission will be highlighted. Also, SOAs have been used in optical demultiplexing from 40 Gbit/s down to 10 Gbit/s RZ signals using its phase properties and in integrated photonic devices like multiwavelength lasers.

Chromatic and temperature induced dispersion can both severely affect incoherent high data rate communications in optical fibre. This is certainly also true for incoherent optical code division multiple access (OCDMA) systems with multi-wavelength picosecond code carriers. Here, even a relatively small deviation from a fully dispersion compensated transmission link can strongly impact the overall system performance, the number of simultaneous users, and the system cardinality due to the recovered OCDMA auto-correlation being strongly distorted, time-skewed, and having its full width at half maximum (FWHM) value changed. It is therefore imperative to have a simple tunable means for controlling fibre chromatic or temperature induced dispersion with high sub-picosecond accuracy. To help address this issue, we have investigated experimentally and by simulations the use of a semiconductor optical amplifier (SOA) for its ability to control the chirp of the passing optical signal (OCDMA codes) and to exploit the SOA ability for dispersion management of a fibre link in an incoherent OCDMA system. Our investigation is done using a 19.5 km long fibre transmission link that is exposed to different temperatures (20 °C and 50 °C) using an environmental chamber. By placing the SOA on a transmission site and using it to manipulate the code carrier’s chirp via SOA bias adjustments, we have shown that this approach can successfully control the overall fibre link dispersion, and it can also mitigate the impact on the received OCDMA auto-correlation and its FWHM. The experimental data obtained are in a very good agreement with our simulation results.

A semiconductor optical amplifier (SOA) is a versatile optical component with multiple functions, e.g., optical amplification, detection, and modulation.1 SOAs with these functions have been applied to transmission systems as full-duplex transceivers-’ and as transceivers with optical gain.3 In this paper we demonstrate still another application of SOAs as an important network element—an add—drop multiplexer (ADM). The ADM function of an SOA was implemented in a digitally modulated subcarrier-multiplexed system with the general configuration shown in Fig. 1(a). This dual-bus system can be used for local- area-network interconnections or linear SONET digital-loop- carrier ADM applications.

Development of modern optical fiber networks puts an increasing demand on the optical hardware. All-optical signal processing components enable the highest switching rates and allow all-optical regeneration of pulse streams without converting the optical signal into electrical current. The subject of our research is self-switching in a Mach-Zehnder interferometer (MZI) and its applications in optical telecommunication networks. In this device, light injected in one of the input ports is unequally distributed over the two interferometer arms. Due to the intensity dependent refractive index in the interferometer arms, there can be a nonlinear phase shift induced between the optical signals of unequal intensities. The two signals therefore interfere destructively or constructively depending on the input power: in this way we obtain nonlinear self-switching. Two mechanisms of nonlinear phase shifting were considered: active, based on semiconductor optical amplifiers (SOAs), and passive, based on quantum dots (QDs). Interferometers of two types were developed: 2-to-2 (two input ports and two output ports) and 2-to-1 (two input ports and one output port). The 2-to-2 SOA-MZIs based on self-switching have been investigated for two applications. One of them is the pattern effect compensator. If SOAs are employed for all-optical signal amplification, e.g. in optical access networks, an unwanted pulse distortion (known also as the pattern effect) takes place, as a result of the SOA gain saturation. Our component allows pattern-free amplification of the optical signals at bitrates up to 20 Gb/s. At 10 Gb/s it shows an extended input power range (up to 7 dB improvement) and comparable gain, which makes it suitable to be used as an optical amplifier. Another application of the 2-to-2 SOA-MZI is a 2R-regenerator. Optical amplifiers used in long distance optical links add noise to the optical signal, causing signal degradation. The signal can be regenerated by passing it through an optical gate with a nonlinear transfer function. The 2-to-2 SOA-MZI has such a nonlinear transfer function. The regeneration capabilities were demonstrated at 2.5 Gb/s by an improvement of the receiver sensitivity of about 2.5 dB. The dynamic characterization of the chips was carried out in a close cooperation with the research group COM at the Technical University of Denmark within the ePIXnet "network of excellence". The 2-to-1 MZI based on self-switching can be used as a low-loss optical combiner. An essential function in optical fiber networks is the combining of optical signals. A serious disadvantage of the conventional type of combiners used in the networks is that they let only half of the power (3 dB) through. In order to compensate for this loss, passive optical combiners are often used in combination with an in-line SOA. The first realization of the low-loss optical combiner uses SOAs as active phase shifters. Such an active low-loss combiner shows an improvement of transmission of over 2 dB compared to a conventional combiner with an in-line SOA. It is therefore expected that the output optical signal-to-noise ratio of the self-switching SOA-MZI is more than 2 dB better than that of a conventional combiner with an in-line SOA. While for the pattern effect compensator and the 2R-regenerator SOAs are used not only for inducing the nonlinear phase shift, but also for sufficient amplification, for the low-loss optical combiner the preferred nonlinear effects should be passive: combination of the signal is a passive function. Therefore, the second realization is based on a novel material, quantum dots. QDs provide improved all-optical nonlinearities resulting in a very small switching energy and large refractive index changes. Such a passive 2-to-1 QD-MZI based on self-switching showed an improvement up to 1.7 dB with respect to a conventional combiner. These improvements have a huge effect on e.g. the power budget in passive optical networks, where a large number of splitting stages are required. The Mach-Zehnder interferometers were realized in the InP/InGaAsP semiconductor material system, which is perfectly suitable for the integration of the photonic integrated circuits for the telecommunication applications. In order to realize both active components (such as e.g. SOAs) and passive components (such as e.g. waveguides, couplers), an active-passive integration technique was applied. This integration was realized in a close cooperation between JDS Uniphase Eindhoven and the COBRA Research Institute. It employs a three-step metal-organic vapor-phase epitaxy regrowth process. The quantum dot material was grown within the COBRA Research Institute. Our MZIs use a ridge waveguide design, for which a reactive ion etching process was developed in the COBRA cleanroom. As a result of photonic integration our integrated Mach-Zehnder interferometers have very small dimensions: less than a square millimeter.

The development of semiconductor optical amplifiers (SOAs) happened soon after the invention of the semiconductor laser. A SOA is very similar to a semiconductor laser without (or with negligible) optical facet feedback. An incoming signal injected into the SOA propagates along its optical waveguide and is amplified by stimulated emission. The optical gain is achieved by inverting the carrier population in the active region via electrical pumping. During the 1990s due to the development of the erbium doped optical amplifier (EDFA) the popularity of the SOA as a linear amplifier declined as the EDFAs provided higher gain without the detrimental nonlinearities associated with an SOA.

A version of an erbium doped fiber amplifier (EDFA) application scheme designed to increase the efficiency of the simultaneous quantum key distribution session and transmission of information by classical channels in a single optical fiber is explored. A theoretical study of the possibility to use EDFA in the explored way was conducted by numerical simulation methods. The mathematical model is based on the EDFA dynamics equations and the equations that determine the secure key generation rate in case of the subcarrier-wave quantum key distribution. A method for determining the optimal parameters of the scheme under study is described and the evaluation of the feasibility of using EDFA in the explored way is performed. A comparative analysis of the subcarrier-wave quantum key distribution system performance when integrated into an optical network is made in terms of the secure key generation rate for the cases when EDFA is either used or not. The results obtained demonstrate high efficiency of the scheme under study, i.e., the maximum achievable distance of the secure key distribution is increased while maintaining the efficiency of the information transmission.

This paper reviews the characteristics and applications of semiconductor optical amplifiers (SOAs) in subcarrier multiplexed optical systems with theoretical and experimental approach. The main characteristics, application possibilities, optimal operation point from the bit error rate point of view were studied and a interesting alternative concept with semiconductor optical amplifier branching stages was suggested.

The random walk coefficient (RWC) is the index of white noise of FOG, which determines the minimum detection sensitivity of FOG. The white noise of FOG mainly focuses on optical or photoelectric detection, which can be divided into three categories: detector thermal noise, shot noise and relative intensity noise (RIN). In practice, the RWC of FOG is determined by the signal-to-noise ratio (SNR) in the phase detection process rather than the white noise. When the photocurrent is small, the SNR of FOG is determined by the shot noise. When the photocurrent is large, the signal-tonoise ratio of FOG is determined by the RIN. Therefore, the suppression of RIN is the key to improve the precision of FOG. Through the analysis of the macro input and output characteristics of semiconductor optical amplifier (SOA) and the noise spectrum analysis of saturated SOA, it is demonstrated that the gain saturation effect of SOA can effectively suppress the RIN of wide spectrum light source. Through calculation, the theoretical noise rejection ratio is more than 20dB. Therefore, an erbium-doped fiber source with low RIN is designed. The verification is carried out at the light source level and gyro level respectively. In the light source level verification, the RIN suppression effect of 10dB is achieved. In the gyro level verification, the noise suppression effect under different modulation depth is analyzed, and the random walk reduction of gyro achieves 30% - 60%.

Four-wave mixing (FWM) in semiconductor optical amplifiers (SOAs) has several important features, such as, high speed and high FWM conversion efficiency as well as optical demultiplexing (DEMUX) (Mecozzi et al., 1995; Mecozzi & Mrk, 1997; Das et al., 2000). The are several applications of FWM in SOAs for all-optical devices, such as, wavelength converters (Vahala et al., 1996), optical samplers (Inoue & Kawaguchi, 1998), optical phase conjugators (Kikuchi & Matsumura, 1998) and optical multiplexers/demultiplexers (Kawanishi et al., 1997; Kawanishi et al., 1994; Morioka et al., 1996; Uchiyama et al., 1998; Tomkos et al., 1999; Kirita et al., 1998; Buxens et al., 2000) have been demonstrated for optical communication systems. When a pulse of a time-multiplexed signal train (for example, a probe pulse) and a pump pulse are injected simultaneously into an SOA, gain and refractive index in the SOA are modulated and an FWM signal is generated by the modulations. Thus, we can obtain a demultiplexed signal as an FWM signal at the output of SOA. All-optical demultiplexing has been experimentally demonstrated up to 200 Gbit/s (Morioka et al., 1996). Tomkos et al., (Tomkos et al., 1999) suggested a number of ways to improve the performance of the dual-pump demultiplexer at 40 Gbit/s as follows; adjustment of the input wavelengths at the peak gain wavelength of the SOA under saturation conditions, the use of higher pump power at the input of the device, or/and the use of pulsed pumps with short pulsewidths. For the higher bit-rate, the overlap of the input to the FWM signal pulses may appear both in the time and spectral domain. The pattern effect may also appear in the FWM signal due to the slow components of the optical nonlinearities in SOAs (Saleh & Habbab, 1990). These effects degrade the usefulness of the FWM in SOAs as a practical DEMUX device in optical network/ communication systems. Therefore, it is very important to analysis the optical DEMUX characteristics based on FWM in SOAs for the ultrafast multi-bit input optical pulses.