Automated design flow for diode-based nanofabrics

Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability.

In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (Complementary Metal-Oxide-Semiconductor) technology, trying to follow as much as possible the empirical Moore's Law. In the last five years this trend has been facing technology limits that have led to the development of a new research field, named Beyond CMOS, which investigates new electron devices concept and materials that can replace or co-integrate the standard technology, to make large scale integrated (LSI), high performance, low power devices. Carbon nanotubes (CNTs) are considered one of the most promising materials for Beyond CMOS devices, both at front-end and back-end level. The development of the research on this new organic material is due to its nanometer scale dimensions and to its outstanding electrical (metallic and semiconducting behavior, ballistic conduction, current density > 109 A/cm2) and mechanical (Young's modulus ∼1 TPa) properties, nevertheless due to its low mass (mass density ρ = 1300 kg/m3). Among the several CNT applications already reported in literature (interconnections, sensors, transistors, memory, etc.), a particular interest is on their use to build Nano-Electro-Mechanical (NEM) devices, such as resonators and switches. NEM relays based on carbon nanotubes show large-current density drive and high speed operation compared to metal-based NEMS counterparts, low actuation voltage and low power, performances which are promising for radio-frequency (RF) applications, where RF MEM devices are considered as replacement solution for their off-chip and/or solid-state counterparts in front-end transceivers. Most of the previously reported CNT NEM switches concerns relay configuration based on one single movable nanotube and its DC characterization. Despite individual proof-of-concept merits, an electromechanical switch based on a single CNT usually presents an output signal level that is too low for practical applications and a poor reliable fabrication process, which opposes the precise control at wafer level achieved by standard technology. Alternatively, a very large-scale integration of NEM devices requires the exploitation of high-density aligned arrays of nanotubes, grown in precise locations and that could be patterned into well-defined and controlled configurations. The objective of this research work was to develop LSI NEM switches based on high dense carbon nanotube arrays in the back end of the line (BEOL), with conductive and capacitive contacts and tested from DC up to high frequency (RF), in order to evaluate their performances in a wide range of operations. The synthesis process of carbon nanotubes was performed by thermal CVD and temperature, gas concentration and catalyst pretreatment were optimized to achieve high dense aligned CNT arrays. A study on the catalyst geometries and on the substrate materials were performed in order to obtain horizontal aligned arrays grown directly on metallic substrate without density change. We developed a novel surface micromachining process to suspend CNT arrays. The DC characterization of CNT NEM switches was exploited to extract the equivalent electromechanical properties of the CNT membranes, since they behave as a new body material. We extracted an equivalent flexural modulus of 8.5 GPa and a resistivity of 0.0077 Ωcm. The devices, in both configurations, present a very low actuation voltage, below 10 V, lower than typical metal NEM switch for the same dimensions and a comparable switching time. The RF characterization was performed in the telecommunication frequency range (up to 6 GHz) showing reasonably high isolation and low insertion loss. The relay shows a lower reliability than the capacitive switch, due to the elevated drive current which induces the CNTs burning at the metal-to-metal interface. The RF measurements were used to extract the parameters of the proposed devices equivalent lumped model. Several implementations of CNT NEM switches, both for DC (reconfigurable interconnects, logic functions, memories) and RF (signal routing purposes in RF system Front-Ends, phase shifting networks or digitalized capacitor banks) applications, were reported.

Although sorting networks have extensively been reported in literature (Batcher, 1962), there are a few references that cover a detailed explanation about their VLSI (Very Large Scale of Integration) realization in CMOS (Complementary Metal-Oxide-Semiconductor) technology (Turan et al., 2003). From an algorithmic point of view, a sorting network is defined as a sequence of compare and interchange operations depending only on the number of elements to be sorted. From a hardware perspective, sorting networks can be visualized as combinatorial circuits where a set of denoted compare-swap (CS) circuits can be connected in accordance to a specific network topology (Knuth, 1997). In this chapter, the design of sorting networks in CMOS technology with applicability to VLSI design is approached at block, transistor, and layout levels. Special attention has been placed to show the hierarchical structure observed in sorting schemes where the so called CS circuit constitutes the fundamental standard cell. The CS circuit is characterized through SPICE simulation making a particular emphasis in the silicon area and delay time parameters. In order to illustrate the inclusion of sorting networks into specific applications, like signal processing and nonlinear function evaluation, two already reported examples of integrated circuit designs are provided (Agustin et al., 2011; Jimenez et al., 2011).

Instruction scheduling is a crucial issue for cutting edge VLSI processors that exploit parallelism to solve the tradeoff between clock speed and power dissipation. A double scheme for multiple pipelines merges their scalar units into a multifunctional unit (MFU) and makes the MFU wave-pipeline. Parallelizing a resultant pipeline achieves instruction scheduling free due to multifunctionality. Applied such approach to the latest design of a ubiquitous processor, HCgorilla, this is implemented by using 0.18-µm CMOS standard cell chip.

The interconnect temperature of very large scale integration (VLSI) circuits keeps rising due to self-heating and substrate temperature, which can increase the delay and power dissipation of interconnect wires. The thermal vias are regarded as a promising method to improve the temperature performance of VLSI circuits. In this paper, the extra thermal vias were used to decrease the delay and power dissipation of interconnect wires of VLSI circuits. Two analytical models were presented for interconnect temperature, delay and power dissipation with adding extra dummy thermal vias. The influence of the number of thermal vias on the delay and power dissipation of interconnect wires was analyzed and the optimal via separation distance was investigated. The experimental results show that the adding extra dummy thermal vias can reduce the interconnect average temperature, maximum temperature, delay and power dissipation. Moreover, this method is also suitable for clock signal wires with a large root mean square current.

In this paper, we utilize the framework of compressed sensing (CS) for device detection and distributed resource allocation in large-scale machine-to-machine (M2M) communication networks. The devices are partitioned into clusters according to some pre-defined criteria, e.g., proximity or service type. Moreover, by the sparse nature of the event occurrence in M2M communications, the activation pattern of the M2M devices can be formulated as a particular block sparse signal with additional in-block structure in CS based applications. This paper introduces a novel scheme for distributed resource allocation to the M2M devices based on block-CS related techniques, which mainly consists of three phases: (1) In a full-duplex acquisition phase, the network activation pattern is collected in a distributed manner. (2) The base station detects the active clusters and the number of active devices in each cluster, and then assigns a certain amount of resources accordingly. (3) Each active device detects the order of its index among all the active devices in the cluster and accesses the corresponding resource for transmission. The proposed scheme can efficiently reduce the acquisition time with much less computation complexity compared with standard CS algorithms. Finally, extensive simulations confirm the robustness of the proposed scheme under noisy conditions.

Scaling complementary metal oxide semiconductor (CMOS) devices has been a method used very successfully over the last four decades to improve the performance and the functionality of very large scale integrated (VLSI) designs. Still, scaling is heading towards several fundamental limits as the feature size is being decreased towards 10 nm and less. One of the challenges associated with scaling is the expected increase of static and dynamic parameter fluctuations and variations, as well as intrinsic and extrinsic noises, with significant effects on reliability. Therefore, there is a clear, growing need for electronic design automation (EDA) tools that can predict the reliability of future massive nano-scaled designs with very high accuracy. Such tools are essential to help VLSI designers optimize the conflicting tradeoffs between area-power-delay and reliability requirements. In this paper, we introduce an EDA tool that quickly and accurately estimates the reliability of any CMOS gate. The tool improves the accuracy of the reliability calculation at the gate level by taking into consideration the gate's topology, the reliability of the individual devices, the applied input vector, as well as the noise margins. It can also be used to estimate the effect on different types of faults and defects, and to estimate the effects of enhancing the reliability of individual devices on the gate's overall reliability.

Software-Defined Data Center Networks (SDDCNs) utilizes Software Defined Networking (SDN) as a network architecture to achieve highly flexible, programmable, and automated management of Data Center Networks (DCNs). The high energy consumption of DCNs remains a persistent and significant challenge. Thus, the energy saving is crucial and imperative for DCNs. Current energy-efficient solutions primarily rely on flow consolidation and dynamic device sleeping techniques to reduce energy consumption. However, these approaches often yield long Flow Completion Time (FCT), potentially resulting in violations of service-level agreements, particularly for delay-sensitive applications. In this paper, we formulate the problem of minimizing the power consumption in SDDCNs as key objective while ensuring timely FCT for delay-sensitive applications. To solve this problem, we first introduce the Active Network Generation (ANG) approach, which generates a minimal active subnet with the least number of active devices while meeting the current traffic demand. Subsequently, we propose two algorithms based on the type of applications: the Delay-Tolerant Flow Route (DTFR) algorithm for delay-tolerant applications and the Delay-Sensitive Flow Route (DSFR) algorithm for delay-sensitive applications. Simulation results demonstrate that our propose solution achieves an energy-saving rate of up to 67.77% and significantly reduces FCT compared to benchmark solutions.

In small-size Complementary Metal Oxide Semiconductor (CMOS) technology, the size of Very Large-Scale Integration (VLSI) below 90nm becomes higher and higher due to the enhancement of the short channel effect of transistors. CMOS Buffer is a very common circuit unit in VLSI. In this paper, a Pileup effect transistor (PET) is proposed to reduce the subthreshold leakage current of the CMOS buffer. The main principle of PET technology is to reduce the voltage difference between gate and source and the voltage difference between drain and source by lowering the voltage of source so as to reduce the subthreshold leakage current. Through simulation-based on Cadence and Taiwan Semiconductor Manufacturing Company (TSMC) N65 library, PET technology can reduce leakage current power consumption by about one-twelfth of the original while maintaining the function of the original CMOS buffer. PET technology has also been found to reduce current consumption in the transition state by about 40%.

In this paper, we present a methodology for systematically optimizing the power-supply voltage for either maximizing the performance of very large scale integration (VLSI) circuits or minimizing the power dissipation in technologies where leakage power is not an insignificant fraction of the total power dissipation. For this purpose, we develop simplified empirical equations that describe the transistor behavior as a function of power supply and temperature. We use these models to calculate the full-chip power dissipation as a function of power supply and temperature. We then solve the power and chip thermal equations simultaneously to calculate the chip temperature and power dissipation at a given power supply. By varying the power-supply voltage, we determine the optimum V/sub DD/ value that minimized delay per unit length in global interconnects and therefore maximizes performance. Using the same framework, by again varying the supply we find the optimum V/sub DD/ that minimized the total power dissipation while maintaining a given delay per unit length. We show that for 90- and 65-nm technologies, where leakage power represents a significant fraction of the total power dissipation, optimum V/sub DD/ for maximum performance is lower than the International Technology Roadmap for Semiconductors (ITRS) specified supply voltage. This is due to the fact that reducing V/sub DD/ results in a large reduction in total power dissipation, and therefore the chip temperature, which improves performance. This improvement in performance is greater than the performance penalty incurred due to reduction in V/sub DD/. We also show that as the required delay per unit length is increased, total chip power consumption is reduced significantly if the power supply is also reduced as compared to the case when power supply is fixed at the nominal value. This change becomes larger with technology scaling due to the fact that leakage power, which is a very strong function of chip temperature, becomes a larger fraction of the full-chip power dissipation.

As one of the three major scenarios of fifth-generation (5G) communication system, massive machine type communications (mMTC) raises more challenges for development of new radio access technology. Unlike the human-to-human communications, the mMTC typically exhibit features such as massive number of devices, small-sized packets and sporadic transmission, which requires novel solutions to satisfy these features. In this paper, we propose a novel grant-free compressive sensing based solution with system level design to jointly conduct the active devices detection, channel estimation and data recovery without knowing the number of active devices. Specifically, in proposed solution, we integrate the sparsity information of channel coefficients and data symbols and exploit the constellation information of modulation and the data diversity of different devices to enhance the performance of receiver. Simulation results demonstrate that the proposed solutions have improve the performance of active device detection, channel estimation, data recovery and the throughput of the system.

Unsourced multiple access abstracts grantless simultaneous communication of a large number of devices (messages) each of which transmits (is transmitted) infrequently. It provides a model for machine-to-machine communication in the Internet of Things, including the special case of radio-frequency identification, as well as neighbour discovery in ad hoc wireless networks. This paper presents a fast algorithm for unsourced multiple access that scales to ${\mathscr{C}}=2^{100}$ (active or non-active) devices (arbitrary $100$ bit messages). The primary building block is multiuser detection of binary chirps, which are simply codewords in the second-order Reed–Muller code. The chirp detection algorithm originally presented by Howard et al. (2008, 42nd Annual Conference on Information Sciences and Systems) is enhanced and integrated into a peeling decoder designed for a patching and slotting framework. In terms of both energy per bit and number of active devices (number of transmitted messages), the proposed algorithm is within a factor of $2$ of state-of-the-art approaches. A significant advantage of our algorithm is its computational efficiency. We prove that the worst-case complexity of the basic chirp reconstruction algorithm is ${\mathscr{O}}[nK(\log _2^2 n + K)]$, where $n$ is the codeword length and $K$ is the number of active users. Crucially, the complexity is sublinear in ${\mathscr{C}}$, which makes the reconstruction computationally feasible—a claim we support by reporting computing times for our algorithm. Our performance and computing time results represent a benchmark against which other practical algorithms can be measured.

This paper describes a novel complementary metal oxide semiconductor (CMOS) bootstrapped driver circuit for driving large resistive capacitive (RC) loads. The proposed bootstrapped driver reduces the leakage as well as process, voltage and temperature (PVT) variations from the boosted nodes with higher switching speed. Very large scale integration (VLSI) designers need boosted output for the logic circuits which are operating in ultra-deep submicron regime under widespread use of low voltage. Proposed CMOS bootstrapped driver circuit is easy in design; built with minimum number of transistors and have high boosting efficiency with sharp output performance. Comparative evaluations with existing bootstrapped driver circuits are reported. Simulation results are derived by HSPICE tool with predictive technology model (PTM) bulk CMOS process fabrication at 32 nm technology node. The ability of large leakage reduction makes this driver superior as compared to active drivers. An average of 96.97% leakage current is saved at nominal ultra-low voltage of 0.15 V. Monte-Carlo analysis indicates that the proposed bootstrapped driver has less sensitivity of PVT variations. The power consumption and delay sensitivities are reduced by 10 × and 4.12 × as compared to conventional circuit.

Increasing speed and complexity of design gives a significant increase in power consumption in VLSI chips. Speed, power consumption and space are major issues in VLSI circuit. To meet these challenges there are certain design techniques which are used to reduce power. Optimization of power can be done by considering various components such as transistor sizing, voltage scaling, variable VDD, multiple threshold voltages, voltage islands, power gating, long channel transistor, stacking & parking states and logic styles etc. Power consumption in VLSI circuit is data dependent. In this paper different design methods are tested to optimize the power. It is found that algorithm based design reduces gate switching activity that results reduction of power in multiplier circuit. Keyword: Transistor sizing, voltage scaling, variable VDD, multiple threshold voltages, voltage islands, long channel transistor, stacking & parking states, logic styles, Genetic algorithm, Booth multiplication I. Introduction Reduction in power dissipation is an important design issue in VLSI circuits. The design parameters have major effect on the overall performance of the system. On the basis of component used and their function different optimization techniques can be used. For example in case of multiplier power consumption depends upon data. This is because switching contributes to more power consumption. This can be optimized by using various gate combinations. Gate switching can be reduced by using algoritms. For example of in case of multiplier design method Booth algorithm as well as modified Booth algorithm can be used for efficient multiplication. In this paper various approaches are used for power consumption eg. transistor sizing, voltage scaling, variable VDD, multiple threshold voltages, voltage islands, long channel transistor, stacking& parking states, logic styles, Genetic algorithm, Booth multiplication etc. This paper is divided into five sections. First section is of introduction. Second section is about preliminary studies. Third section includes different design methods and their testing. Fourth section is of comparison with discussion. Finally, fifth section is conclusion of the work reported here.

The design of a high frequency (L Band), low power (2.75mW) Phase Lock Loops with a 350nm Complementary Metal Oxide Semi Conductor (CMOS) technology has been represented. The comparison of Current Starved Voltage Controlled Oscillator (CSVCO) and Differential pair VCO is performed and analyzed for low power and high frequency analysis respectively. Each component of Phase Lock Loop (PLL) is designed with 350nm CMOS technology in Design Architect Integrated Circuit Station by Mentor Graphics (Eldo-Net) as simulator. In this paper both the standard configurations have been simulated under the same environment and results are analyzed for two most important Very Large Scale Integration (VLSI)constraints, Speed (High frequency range) and Power consumption. The high speed and locking performance of the Differential pair VCO has been evaluated against the lower power consumption benefit of CSVCO.