Barrier versus tilt exchange gate operations in spin-based quantum computing

Si-based spin qubits are promising due to their long decoherence time and the compatibility with state-of-the-art semiconductor technology and have been demonstrated using quantum dots (QDs) to host single electrons for spin manipulation. In this work, we simulate the electrostatics and quantum transport properties of quantum dots on a Si metal–oxide–semiconductor platform and a Si/SiGe heterostructure. We investigate the effects of gate configurations and the SiGe spacer thickness on device characteristics, such as gate capacitances, Coulomb blockade, and charge stability. For a single quantum dot, placing its barrier gates (BGs) under the plunger gate improves the charge stability, while swapping the positions of those gates reduces the effects of the barrier gate biases on the charge stability. A thicker SiGe spacer further suppresses the effects of the barrier gate biases on the charge stability for quantum dots on the Si/SiGe heterostructure but leads to stronger crosstalk between neighboring quantum dots. Wider barrier gates can help to mitigate the crosstalk effects for multiple quantum dots. These findings provide key insights into the optimization of the gate configurations and material selection to improve the charge stability and minimize the crosstalk by different gates for future development of scalable Si-based quantum dots.

The selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si+ implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively. The Si NWs and QDs are formed during high-temperature dry oxidation of single-crystal Si/SiGe heterostructure fins and pillars, during which Ge diffuses along the nanostructure sidewalls and encapsulates the Si layers. The fins and pillars were then subjected to a 3 × 1015 ions/cm2 1 MeV Si+ implant, resulting in the amorphization of SiGe, while leaving the encapsulated Si crystalline for larger, 65-nm wide NWs and QDs. Interestingly, the 26-nm diameter Si QDs amorphize, while the 28-nm wide NWs remain crystalline during the same high energy ion implant. This result suggests that the Si/SiGe pillars have a lower threshold for Si-induced amorphization compared to their Si/SiGe fin counterparts. However, Monte Carlo simulations of ion implantation into the Si/SiGe nanostructures reveal similar predicted levels of displacements per cm3. Molecular dynamics simulations suggest that the total stress magnitude in Si QDs encapsulated in crystalline SiGe is higher than the total stress magnitude in Si NWs, which may lead to greater crystalline instability in the QDs during ion implant. The potential lower amorphization threshold of QDs compared to NWs is of special importance to applications that require robust QD devices in a variety of radiation environments.

Novel amine-terminated silicon (Si) quantum dots (QDs) were synthesized and applied for the detection of human serum proteins on gels directly after polyacrylamide gel electrophoresis (PAGE). The diameter of these stable amine-terminated Si QDs was in the range of 0.5-2.0 nm. In this study, the fluorescent imaging conditions, such as the buffer solution, pH value, buffer concentration and quantity of Si QDs, were optimized and the possible mechanisms of Si QDs-protein interaction were analyzed. The mode of Si QDs and human serum albumin association was found to occur by hydrogen bond interactions; this was probably attributed to the interaction between the amino group of amine-terminated Si QDs and the carboxyl group of proteins. Meanwhile, human serum proteins separated by native 1D and native 2D electrophoresis were detected by Si QD-based fluorescent imaging. Some proteins, such as isoform 1 of α-1-antitrypsin, complement C3 (Fragment) and hemopexin, which were identified by mass spectrometry (MS), were easily detected by using Si QDs, but not with CBB-R250 staining. The Si QDs-based fluorescent imaging technique with high resolution is a sensitive and dependable method for direct detection of human serum proteins, and has enormous potential in clinical diagnosis.

We have been exploring doping and alloying of semiconductor quantum dots (QDs) and the impact of chemical composition on the QD primary photochemical events including charge generation, separation, and recombination. Dopant incorporation and alloying without phase segregation are significant challenges using conventional colloidal growth methods. Nonthermal plasma-enhanced chemical vapor deposition (PECVD) growth is an attractive approach to overcome these challenges since it is controlled by kinetics rather than thermodynamics.In this presentation, we will describe the PECVD synthesis of silicon quantum dots (Si QDs) that provides the ability to incorporate high concentrations (~1020 cm–3) of either p-type (B:Si) or n-type (P:Si) dopants. We also can use this synthetic technique to prepare co-doped QDs containing both P and B atoms in the same PB:Si QD. Whereas the optical absorption of singly P:Si and B:Si QDs exhibit plasmonic features characteristic of a high concentration of dopants, the co-doped PB:Si QDs instead exhibit photophysics that resemble those of intrinsic Si QDs, for example emission lifetimes of ~100 μs, but with size-dependent optical transitions that are tunable even below the energy of bulk Si (1.12 eV). Finally, we will describe new work on III–V semiconductors, in particular gallium nitride (GaN) QDs, that also exhibit tunable photophysics and serve as useful model systems for photochemically-driven small molecule conversion.

Long-distance transfer of quantum information in architectures based on\nquantum dot spin qubits will be necessary for their scalability. One way of\nachieving it is to simply move the electron between two quantum registers.\nPrecise control over the electron shuttling through a chain of tunnel-coupled\nquantum dots is possible when interdot energy detunings are changed\nadiabatically. Deterministic character of shuttling is however endangered by\ncoupling of the transferred electron to thermal reservoirs: sources of\nfluctuations of electric fields, and lattice vibrations. We theoretically\nanalyse how the electron transfer between two quantum dots is affected by\nelectron-phonon scattering, and interaction with sources of $1/f$ and Johnson\ncharge noise in both detuning and tunnel coupling. The electron-phonon\nscattering turns out to be irrelevant in Si quantum dots, while a competition\nbetween the effects of charge noise and Landau-Zener effect leads to an\nexistence of optimal detuning sweep rate, at which probability of leaving the\nelectron behind is minimal. In GaAs quantum dots, on the other hand, coupling\nto phonons is strong enough to make the phonon-assisted processes of interdot\ntransfer dominate over influence of charge noise. The probability of leaving\nthe electron behind depends then monotonically on detuning sweep rate, and\nvalues much smaller than in silicon can be obtained for slow sweeps. However,\nafter taking into account limitations on transfer time imposed by need for\npreservation of electron's spin coherence, minimal probabilities of leaving the\nelectron behind in both GaAs- and Si-based double quantum dots turn out to be\nof the same order of magnitude. Bringing them down below $10^{-3}$ requires\ntemperatures $\\leq \\! 100$ mK and tunnel couplings above $20$ $\\mu$eV.\n

Though electron spins in electrically defined silicon (Si) quantum dot systems have been extensively employed for physical realization of quantum processing units, their application to quantum sensing has not been active compared to the case of photonic qubits and nitrogen-vacancy spins in diamonds. This work presents a comprehensive study on the feasibility of Si quantum dot structures as a physical platform for implementation of a sensing protocol for magnetic fields. To examine sensing operations at a systematic level, we adopt in-house device simulations taking a Si double quantum dot (DQD) system as a target device where the confinement of electron spins is controlled with electrical biases in a Si/Si-germanium heterostructure. Simulation results demonstrate the fairly nice utility of the Si DQD platform for detecting externally presented static magnetic fields, and, more notably, reveal that sensing operations are not quite vulnerable to charge noise that is omnipresent in solid materials. As a rare study that presents in-depth discussion on operations of quantum sensing units at a device-level based on computational modeling, this work can deliver practical insights for potential designs of sensing units with electron spins in Si devices.

In summary, p-type (or n-type) Si QDs/n-type (or p-type) crystalline-Si solar cells were successfully fabricated by ion beam sputtering and annealing, and their photovoltaic and luminescence properties were studied as functions of doping element and concentration. The active doping of B into the Si quantum dots was successfully proved to be due to the preferred diffusion of B into Si QDs by SIMS depth profiling analysis of B-doped Si02/B-doped Si multilayer film before and after annealing. The B-doped Si-QD solar cells showed close correlation of the photovoltaic properties with the NC/defect PL behaviors. Possible physical mechanisms will be discussed based on the doping-dependent experimental results for various doping elements.

Quantum dots (QDs) are an attractive platform for building multimodality imaging probes, but the toxicity for typical cadmium QDs limits enthusiasm for their clinical use. Nontoxic, silicon QDs are more promising but tend to require short-wavelength excitations which are subject to tissue scattering and autofluorescence artifacts. Herein, we report the synthesis of paramagnetic, manganese-doped, silicon QDs (Si(Mn) QDs) and demonstrate that they are detectable by both MRI and near-infrared excited, two-photon imaging. The Si(Mn) QDs are coated with dextran sulfate to target them to scavenger receptors on macrophages, a biomarker of vulnerable plaques. TEM images show that isolated QDs have an average core diameter of 4.3 +/- 1.0 nm and the hydrodynamic diameters of coated nanoparticles range from 8.3 to 43 nm measured by dynamic light scattering (DLS). The Si(Mn) QDs have an r(1) relaxivity of 25.50 +/- 1.44 mM(-1) s(-1) and an r(2) relaxivity of 89.01 +/- 3.26 mM(-1) s(-1) (37 degrees C, 1.4 T). They emit strong fluorescence at 441 nm with a quantum yield of 8.1% in water. Cell studies show that the probes specifically accumulate in macrophages by a receptor-mediated process, are nontoxic to mammalian cells, and produce distinct contrast in both T(1)-weighted magnetic resonance and single- or two-photon excitation fluorescence images. These QDs have promising diagnostic potential as high macrophage density is associated with atherosclerotic plaques vulnerable to rupture.

Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent g-tensors. While this characteristic of the g-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these g-tensors necessitates the need to understand their sensitivity to the confinement potential that defines the quantum dots. Here, we demonstrate a S − T_ qubit whose frequency is a strong function of the voltage applied to the barrier gate shared by the quantum dots. We find a g-factor that can be approximately increased by an order of magnitude adjusting the barrier gate voltage only by 12 mV. We show how this strong dependence could potentially be attributed to the dots moving through a variable strain environment in our device. This work not only reinforces previous findings that site-dependent g-tensors in germanium can be utilized for qubit manipulation, but reveals the sensitivity and tunability these g-tensors have to the electrostatic confinement of the quantum dot.

Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.

Quantum dots (QDs) have size-dependent optical properties that make them uniquely advantageous for in vivo targeted fluorescence imaging, traceable delivery, and therapy. The use of group II-VI (e.g., CdSe) QDs for these applications is advancing rapidly. However, group II-VI QDs contain toxic heavy metals that limit their in vivo applications. Thus, replacing these with QDs of a biocompatible semiconductor, such as silicon (Si), is desirable. Here, we demonstrate that properly encapsulated biocompatible Si QDs can be used in multiple cancer-related in vivo applications, including tumor vasculature targeting, sentinel lymph node mapping, and multicolor NIR imaging in live mice. This work overcomes dispersibility and functionalization challenges to in vivo imaging with Si QDs through a unique nanoparticle synthesis, surface functionalization, PEGylated micelle encapsulation, and bioconjugation process that produces bright, targeted nanospheres with stable luminescence and long (>40 h) tumor accumulation time in vivo. Upon the basis of this demonstration, we anticipate that Si QDs can play an important role in more sophisticated in vivo models, by alleviating QD toxicity concerns while maintaining the key advantages of QD-based imaging methods.

Designing various inorganic nanomaterials that are cost effective, water soluble, optically photostable, highly fluorescent and biocompatible for bioimaging applications is a challenging task. Similar to semiconducting quantum dots (QDs), silicon QDs are another alternative and are highly fluorescent, but non-water soluble. Several surface modification strategies were adopted to make them water soluble. However, the photoluminescence of Si QDs was seriously quenched in the aqueous environment. In this report, highly luminescent, water-dispersible, blue- and green-emitting Si QDs were prepared with good photostability. In vitro studies in monocytes reveal that Si QDs exhibit good biocompatibility and excellent distribution throughout the cytoplasm region, along with the significant fraction translocated into the nucleus. The in vivo zebrafish studies also reveal that Si QDs can be evenly distributed in the yolk-sac region. Overall, our results demonstrate the applicability of water-soluble and highly fluorescent Si QDs as excellent in vitro and in vivo bioimaging probes.

<sec>Spin qubits in silicon-based semiconductor quantum dots have become one of the prominent candidates for realizing fault-tolerant quantum computing due to their long coherence time, good controllability, and compatibility with modern advanced integrated circuit manufacturing processes. In recent years, due to the remarkable advances in silicon-based materials, the structure of quantum dot and its fabrication process, and qubit manipulation technology, the great progress of high-fidelity state preparation and readout, single- and two-qubit gates of spin qubits for silicon based semiconductor quantum computation has been achieved. The control fidelities for single- and two-qubit gates all exceed 99%—fault tolerance threshold required by the surface code known for its exceptionally high tolerance to errors. In this paper, we briefly introduce the basic concepts of silicon-based semiconductor quantum dots, discuss the state-of-art technologies used to improve the fidelities of single- and two-qubit gates, and finally highlight the research directions that should be focused on.</sec><sec>This paper is organized as follows. Firstly, we introduce three major types of quantum dot (QD) devices fabricated on different silicon-based substrates, including Si/SiGe heterojunction and Si/SiO<sub>2</sub>. The spin degree of electron or nucleus hosted in QD can be encoded into spin qubits. Electron spin qubits can be thermally initialized to ground state by using an electron reservoirs, and can be read out by spin-charge conversion mechanism: energy-selective readout (Elzerman readout) with reservoirs or Pauli spin blockade (PSB) without reservoirs. Additionally, high fidelity single-shot readout has been demonstrated by using radio-frequency gate reflectometry combined with the PSB, which has unique advantages in large-scale qubit array. To coherently control the spin qubits, electron dipole resonance (ESR) or electron dipole spin resonance (EDSR) for electron and nuclear magnetic resonance (NMR) for nucleus are introduced. With the help of isotope purification greatly improving the dephasing time of qubit and fast single-qubit manipulation based on EDSR, fidelity above 99.9% can be reached. For the two-qubit gates based on exchange interaction between electron spins, the strength of interaction <inline-formula><tex-math id="M1">\begin{document}$ J $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M1.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M1.png"/></alternatives></inline-formula> combined with Zeeman energy difference <inline-formula><tex-math id="M2">\begin{document}$ \Delta {E}_{z} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M2.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M2.png"/></alternatives></inline-formula> determines the energy levels of system, which lead to the different two-qubit gates, such as controlled-Z (CZ), controlled-Rotation (CROT), and the square root of the SWAP gate (<inline-formula><tex-math id="M3">\begin{document}$ \sqrt{\rm{S}\rm{W}\rm{A}\rm{P}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M3.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="23-20221900_M3.png"/></alternatives></inline-formula>) gates. In order to improve the fidelity of two-qubit gates, a series of key technologies is used experimentally, they being isotope purification, symmetry operation, careful Hamiltonian engineering, and gate set tomography. Fidelity of two-qubit gates exceeding 99% has been demonstrated for electron spin qubits in Si/SiGe quantum dots and nuclear spin qubits in donors. These advances have pushed the silicon-based spin qubit platform to become a major stepping stone towards fault-tolerant quantum computation. Finally, we discuss the future study of spin qubits, that is, how to effectively expand the number of qubits, and many other problems to be explored and solved.</sec>

Lithium (Li) metal anodes are demanded by high‐energy Li batteries because Li has the highest capacity and low electrode potential. However, Li metal anodes usually show poor cyclability and unsafe deposition at anode/separator interfaces, which may increase the risk of short circuits. In this work, we fabricate a sandwiched structure of reduced graphene oxides (rGO) with silicon (Si) quantum dots (QDs) as the inducing agents between rGO layers. Because of the lithiophilicity of Si QDs, Li growth is favorably guided away from the unsafe anode/separator interface towards the interlayer positions, significantly improving the cyclability and safety of the Si‐QDs‐sandwiched rGO anode. The uniformly‐distributed Si QDs and layered electrode structure can regulate Li plating/stripping to avoid the superficial Li growth and reduce the accumulation of solid electrolyte interphase. The growth‐guiding strategy using the sandwiched structure provides a new approach to fabricating high energy Li‐based battery anodes.

The exchange coupling in a realistic double quantum dot system is computed as a function of the gate confinement and magnetic field using a hybrid multiscale approach where the many‐body Schrödinger equation is solved exactly within the full quantum dot device environment. It is found that at zero magnetic field the exchange energy varies from meV to sub‐μeV value as the confinement gate biases (tunneling barrier) are changed and the system is driven from a single quantum dot to two coupled quantum dots. At the same time the magnetic field of the singlet‐triplet transition is weakly affected by the changes and remains at about 1 T in the same range of the gate biases. The small values of the exchange coupling in this structure are attributed to the large inter‐electron separation arising when the Coulomb repulsion dominates tunneling. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)