- Conference Article
75
- 10.1117/12.2583978
Graphene oxide for enhanced optical nonlinear performance in CMOS compatible integrated devices
- Mar 05, 2021
- Yuning Zhang + 6 more +6
We report enhanced nonlinear optics in complementary metal oxide\nsemiconductor compatible photonic platforms through the use of layered two\ndimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon\non insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon\nnitride (SiN) waveguides and ring resonators, to demonstrate an enhanced\noptical nonlinearity including Kerr nonlinearity and four wave mixing (FWM).\nThe GO films are integrated using a large area, transfer free, layer by layer\nmethod while the film placement and size are controlled by photolithography. In\nSOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity\nand nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self\nphase modulation (SPM) measurements show significant spectral broadening\nenhancement for SOI nanowires coated with patterned films of GO. The dependence\nof GO Kerr nonlinearity on layer number and pulse energy shows trends of the\nlayered GO films from 2D to quasi bulk like behavior. The nonlinear parameter\nof GO coated SOI nanowires is increased 16 fold, with the nonlinear FOM\nincreasing over 20 times to a FOM greater than 5. We also observe an improved\nFWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM\nmeasurements for samples with different numbers of GO layers and at different\npump powers are performed, achieving up to 7.3 dB conversion efficiency (CE)\nenhancement for a uniformly coated device with 1 layer of GO and 9.1 dB for a\npatterned device with 5 layers of GO. These results reveal the strong potential\nof GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic\ndevices.\n
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