Circularly polarized lasing from chiral metal-organic frameworks

Full-angle distributed Bragg reflectors (DBRs) consisting of numerous sub-DBRs with discrete central wavelengths have been developed to enhance performance of GaN-based flip-chip mini light-emitting diodes (FC mini-LEDs). However, relatively low reflectivity of full-angle DBRs at large angle incidence restricts further enhancement in performance of FC mini-LEDs. Here, we introduce a reflectivity optimization strategy for constructing high-reflectivity multiple-stack DBRs by rationally engineering the number of sub-DBRs and adjusting central wavelength distribution of sub-DBRs. Based on the reflectivity optimization strategy, we devise a Ti3O5/SiO2 quintuple-stack DBR which is composed of five sub-DBRs. Our quintuple-stack DBR maintains a high reflectivity (>97.5%) over a wide range of incident angles of light. Notably, compared with the full-angle DBR, our quintuple-stack DBR exhibits higher reflectivity at large angle incidence and thinner multilayer thickness. Furthermore, we demonstrate two types of GaN-based blue FC mini-LEDs with indium-tin oxide (ITO)/quintuple-stack DBR and ITO/full-angle DBR p-type ohmic contacts. Benefiting from superior reflection performance, blue FC mini-LED with ITO/quintuple-stack DBR achieves an enhancement of ∼5.8% in light output power at 10 mA, in comparison with blue FC mini-LED with ITO/full-angle DBR. Our work signifies an advancement towards high-reflectivity DBRs, which enables higher-performance FC mini-LEDs.

Structural analysis of distributed Bragg reflector mirrors

This study presents the theoretical design and analysis of a new surface micro-machined tuneable Fabry-Perot (FP) infrared filter for adaptive infrared photon detectors. The proposed structure uses broad spectral range, high reflectivity distributed Bragg reflector (DBR) mirrors based on amorphous Si/air layers, resulting in very high finesse filters. The device utilises three sacrificial layers to define the air-gap in the DBR mirrors, the resonant cavity spacer, and the separation of the top mirror from the supporting flexures. The flexures are fabricated from low-temperature plasma-enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) and Au thin films. Separation of the top mirror from the supporting flexures allows for improved fill-factors (up to 79%), as well as increased tuning range. Optical and finite element modelling of the device has shown large wavelength tuning ranges are achievable (1.5- 2.5 ?m) at low actuation voltages (≪15 V), whilst still maintaining high cavity finesse.

We demonstrate the characteristics of 2 mm to 1 cm long vertical-cavity surface-emitting laser (VCSEL) amplifiers that emitted continuous wave (CW). VCSELs have various applications in different fields, including datacom, optical interconnects, printers, and sensors. However, VCSEL technology has not been applied in laser material processing that needs a light source with high power density. This is because single-mode (SM) VCSELs have fundamental difficulty in producing beams having an output power of more than several milliwatts. On the contrary, the application range of VCSEL amplifiers is expected to be extended into fields that simultaneously require lasers with high power and high beam quality because they have the potential to attain both characteristics. In this paper, we demonstrate the CW operation of high-power SM 2 mm to 1 cm long VCSEL amplifiers that had an output power of several watts at 20 °C. By optimizing the top-mirror reflectivity and seed-laser wavelength, the output power was linearly proportional to the amplifier length when the growth of amplified spontaneous emission (ASE) was suppressed. The I–L characteristics for different amplifier lengths were measured. All devices emitted narrow beams with divergence angles of approximately 0.1°. The maximum SM output power of the devices with lengths of 2 mm, 6 mm, and 1 cm were 0.62, 2.13, and 3.25 W, respectively. This result shows the possibility to achieve high power and high beam quality for direct semiconductor laser processing.

ABSTRACTAn electrically pumped 1.24um GaxIn1-xAsyP1-y Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and simulated. Threshold gain of 153cm-1 and threshold current of 1.00mA was obtained. The external efficiency predicted is 0.31. Also the optimized design of VCSEL structure is presented in this article. GaInAsP and AlInAs constitute the Distributed Bragg Reflectors (DBRs) multilayer stack. Reflectivity of the top DBRs is 0.97 and reflectivity of the bottom DBRs is 0.9978 and is shown to provide a good resonant cavity and sufficient lasing intensity. Compared with other reported structures, the present VCSEL has a lower threshold current and higher threshold gain.

Using transfer matrix method and TFcalc thin film design software,the reflectance spectrum of distributed Bragg reflector (DBR) and vertical cavity surface emitting laser (VCSEL) are simulated.The reflectance spectra from the cavity and surface are compared with each other,thus providing the basis for white light source (WLS) optical reflectance spectrum of the VCSEL epitaxial wafer.When using WLS to characterize VCSEL wafer,it is necessary to combine the simulation results and the shape of optical reflectance spectrum to speculate the reflectance seen from the cavity.The influences of different cap layers on the reflectance of DBRs are discussed theoretically and experimentally.With a 1/4 GaAs cap layer,the reflectance reaches up to 97.8% seen from the cavity.This design can make the wavelength of the VCSEL etalon picked easily because of avoiding the influence of test noise. The active region has higher heat accumulation due to the small area and poor thermal conductivity.The characteristics of the gain spectrum of InGaAs/AlGaAs strained quantum well (QW) under different temperatures and the temperature distribution in VCSEL are simulated by Crosslight software.The gain-to-cavity wavelength detuning is used to improve the slope efficiency and the temperature stability.The temperature in active region ranges from 360 K to 370 K.The gain peak wavelength and the Fabry-Perot cavity wavelength are designed in the ranges of 829-832 nm and 845-847 nm,respectively.Epitaxial wafer with top-emitting VCSEL structure grown by metal-organic chemical vapor deposition is characterized.The room temperature photoluminescence peak is at 827.5 nm and the etalon cavity wavelength measured by optical reflectance is 847.7 nm,which are consistent with designed values. The oxide restricted VCSELs with 7.5 m oxide aperture are fabricated.The image of the infrared light source CCD shows that the oxide aperture is circular.A passivation layer of 120 nm SiO2 is finally deposited to insulate water vapor.The threshold current is 0.8 mA,and the maximum output power reaches up to 9 mW at 13.5 mA.The optical spectrum at 6.0 mA reveals multiple transverse modes.The center wavelength is 852.3 nm and the root mean square (RMS) spectrum width is 0.6 nm,meeting the high-speed Datacom standards.Shannon theory indicates that the maximum data rate is not only proportional to bandwidth but also related to signal-to-noise ratio (SNR).It is effective to reduce relative intensity noise and enhance the SNR by increasing output power.From the eye diagram of 25 Gbit/s on-off key VCSEL,it is demonstrated that fall time is 38.66 ps,rise time is 41.54 ps,SNR is 5.6,and jitter RMS is 1.57 ps.Clear eye opening is observed from eye diagram of 25 GBaud/s PAM-4 VCSEL,which indicates the qualified 50 Gbit/s high speed performance.

The rapid growth of internet and cloud computing applications drives a huge demand for bandwidth capacity in communication networks, while power consumption, cost, and space density must scale down. This growth leads to an increase in the size of data centers (longer optical links), and of the fibers’ channel data rate, rooted in Moore’s Law. Until now, multi-mode fibers (MMF) have been largely employed in datacom applications due to the large coupling tolerance. However, the data-carrying capability of MMF decreases with the transmission distance due to pulse broadening resulting from modal and chromatic dispersion. In order to overcome those limits, transceivers based on single mode fiber (SMF) are under development and the first systems are on the market. Vertical-cavity surface-emitting lasers (VCSELs) are the transmitters of choice for short-reach applications due to their low cost, energy efficiency , and small footprint. InP-based VCSELs emitting at long wavelengths (i.e. 1.3 and 1.55 µm) have gained large interest due to their intrinsic lower power consumption (lower band gap) and low losses in silicon waveguides and silica-based optical fibers, which allows longer transmission distances. While short-wavelength GaAs-based VCSELs have achieved small-signal modulation bandwidths up to 30 GHz [1], InP-based VCSELs show inferior modulation capabilities [2, 3]. Up to date, the highest small-signal bandwidth demonstrated on InP-based devices is 22 GHz [3]. The distributed Bragg reflectors (DBRs) commonly used for GaAs-based VCSELs are made of binary and ternary semiconductor compounds, which offer several advantages such as high refractive-index contrast between the layers, good electrical conductivity and low thermal resistivity. The inferiority of semiconductor DBRs lattice matched to InP challenges the modulation bandwidth enhancement of InP-based devices which suffer of poor thermal conductivity, and high lateral spreading resistance. A further challenge is the single-mode laser operation that has motivated the transition from MMF to SMF in datacom systems. In this chapter, the challenges related to InP-based VCSELs are discussed with focus on active region design, cavity engineering, and current and optical confinement. These arguments apply to all InP-based VCSELs with emission wavelength between 1.3 and 2.0 µm. Stationary and dynamic characteristics are presented for a 1.55 µm VCSEL. Finally, datacom and telecom transmission experiments are presented.

GaN-based vertical-cavity surface-emitting lasers (VCSELs) have drawn interest in recent years for their potential applications in data storage, laser printing, solid-state lighting, optical communications, sensing, and displays. Several research groups have demonstrated electrically injected GaN-based VCSELs utilizing different growth and fabrication techniques to address the many challenges associated with III-nitride materials. One such challenge is fabrication of highquality conductive epitaxial distributed Bragg reflectors (DBRs). A relatively new approach that yields high-index-contrast lattice-matched epitaxial DBRs is to introduce subwavelength air-voids (nanopores) in alternating layers of doped/undoped GaN. These nanoporous layers can be achieved by the controlled anodic electrochemical etching of highly doped n-type GaN in acids. The selective formation of the nanopores in the doped layers effectively lowers the refractive index compared to the adjacent undoped GaN layers, resulting in a refractive index difference of ~0.83, allowing high reflectance (>99%) with only ~16 pairs. Here, we will present electrically injected nonpolar m-plane GaN-based VCSELs with lattice-matched nanoporous GaN bottom DBRs and top dielectric DBRs. Lasing under pulsed operation at room temperature was observed at 409 nm with a linewidth of ~0.6 nm and a maximum output power of ~1.5 mW. The nonpolar m-plane orientation offers low transparency, high material gain, and anisotropic gain characteristics. The VCSELs were linearly polarized with a polarization ratio of ~0.94 and polarization-pinned emission along the a-direction. The mode profiles, thermal properties, and lasing yield of the VCSELs are also discussed.

Vertical cavity surface emitting lasers (VCSELs) are demonstrated with high-index-contrast native-oxide-based (AlxOy) distributed Bragg reflectors (DBRs) on both sides of a “2λ” cavity, thus creating a compact (thin, ∼2.8 μm) laser structure. Selective oxidation of high Al composition AlxGa1−xAs layers yields a structure with a four period upper AlxOy/GaAs DBR, a 5.5 period lower AlxOy/GaAs DBR, and a buried oxide current aperture. A reverse-biased tunnel contact junction provides hole injection via lateral electron current between the upper DBR and the oxide aperture layer. These VCSELs operate with submilliampere thresholds, high spontaneous efficiencies, and excellent polarization control.

Reversible oxygen induced emission quenching of both the Spontaneous Emission (SE) and the Amplified Spontaneous Emission (ASE) of poly(9,9-dioctylfluorene) waveguides is demonstrated. We show that ASE shows a stronger quenching than SE, up to about 6.2 times, but also a stronger decrease when the excitation density increases. We conclude that the fast increase of the ASE decay rate is the main process in determining the ASE detection sensitivity, limiting the potentiality of sensitivity improvement of ASE with respect to SE.

Summary form only given. We describe an improved method for measuring the spontaneous emission (SE) spectra from the cleaved side of a VCSEL cavity using a 62.5-/spl mu/m multimode fiber and present experimental results. The VCSEL under study was grown and fabricated in the AlGaAs/GaAs material system. The advantage of this method is that distortion due to top transmission measurements through the distributed Bragg reflectors and filters is avoided. Furthermore, by integrating the SE spectrum rather than directly measuring side emission power, we ensure that the side emission is indeed SE and not due to scattering of stimulated emission from the resonant cavity into the side emission.

In the present work, we investigate threshold characteristics of a single mode 1.55 μm InGaAsP vertical cavity surface emitting laser (VCSEL) with two different optical confinement structures. The device employs InGaAsP active region, which is sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs). The optical confinement introduced by the oxide aperture or a single defect photonic crystal design with holes etched throughout the whole structure, is compared with previous work. Photonic crystal VCSEL shows 30.86% and 57.02% lower threshold current than that of the similar oxide confined VCSEL and previous results, respectively. This paper provides key results of the threshold characteristics, including the threshold current and the threshold power. Results suggest that, the 1.55 μm InGaAsP photonic crystal VCSEL seems to be the most optimal one for light sources in high performance optical communication systems.

Vertical cavity surface emitting lasers (VCSELs) have long been predicted as low-cost enabling laser sources for many applications including optical communications, sensing and imaging. Traditional VCSELs use distributed Bragg reflectors (DBRs) as mirrors, which consist of many tens layers of epitaxy layers with alternating refractive indecies. Snice 2004, we develeoped a new class of planar optics has emerged using near-wavelength dielectric structures, known as high contrast metastructures (HCM). Many extraordinary properties can be designed top-down based for integrated optics on a silicon or GaAs substrate. The one-dimensional version, a single layer high index contrast near-wavelength gratings (HCG), has been used to replace the hundred-layered DBR in a VCSEL structure. In this talk, I will review recent results using HCG/HCM in device applications of VCSELs, beam-steering optical phased array, biosensor, 4-wave generation, and spatial light modulator. I will discuss inventions and advances in VCSELs that have led to recent global deployment of commercial applications including 3D sensing, LIDAR and optical coherent tomography applications. I will also discuss future prospects for advanced applications.

High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO2-buried lateral index guide and adjusting the front mirror reflectivity. Lateral optical confinement has been shown to greatly lower the otherwise significant loss of transverse radiation exhibited by typical VCSELs based on GaN. Employing a long (10λ) cavity can also enhance the output power, by lowering the thermal resistance of the VCSEL and increasing the operating current associated with thermal rollover. This modification, in conjunction with optimized front mirror reflectivity and a buried SiO2 lateral index guide, results in a blue VCSEL (in the continuous wave mode with an 8 μm aperture at 20 °C) having a superior differential quantum efficiency value of 31% and an enhanced 15.7 mW output power. This unit also exhibits a relatively high output power of 2.7 mW at temperatures as high as 110 °C. Finally, a 5.5 μm aperture VCSEL was found to generate a narrow divergence (5.1°) single-lobe far field pattern when operating at an output power of approximately 5 mW.

Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates