Development of atomic layer deposition-activated microchannel plates for single particle detection at cryogenic temperatures

A theoretical and experimental study is report-ed of the gain of microchannel plate (MCP) electron multipliers under conditions of output charge satur-ation. Theoretical calculations, assuming a wall charge saturation mechanism, are used to interpret peak gain and pulse height distribution FWHM data obtained with a number of chevron MCP multipliers. A curved surface MCP intended for use with grazing incidence X-ray optics is described. The effects of an inter-plate voltage are described. Limiting pulse height FWHMs around 30% have been obtained. The properties of straight channel chevrons and single curved channel MCPs are briefly compared.

A cold electron source has been developed using a microchannel plate (MCP) electron multiplier. Primary electron emission is initiated by illumination with ultraviolet photons from a diode. Final electron emission currents of up to 10 μA in continuous wave (CW) mode and 10 mA in pulsed mode have been achieved from a MCP with an active diameter of 5.5 mm. Electron emission generated by UV photons with a wavelength of 260 nm has been shown to be about 30 times more efficient than emission generated by photons with a wavelength of 300 nm. Application of this cold electron source in mass spectrometry is discussed.

Supercapacitors are a kind of energy storage device that lie between traditional capacitors and batteries, characterized by high power density, long cycle life, and rapid charging and discharging capabilities. The energy storage mechanism of supercapacitors mainly includes electrical double-layer capacitance and pseudocapacitance. In addition to constructing multi-level pore structures to increase the specific surface area of electrode materials, defect engineering is essential for enhancing electrochemical active sites and achieving additional extrinsic pseudocapacitance. Therefore, developing a simple and efficient method for defect engineering is essential. Atomic layer deposition (ALD) technology enables precise control over thin film thickness at the atomic level through layer-by-layer deposition. This capability allows the intentional introduction of defects, such as vacancies, heteroatom doping, or misalignment, at specific sites within the material. The ALD process can regulate the defects in materials without altering the overall structure, thereby optimizing both the electrochemical and physical properties of the materials. Its self-limiting surface reaction mechanism also ensures that defects and doping sites are introduced uniformly across the material surface. This uniform defect distribution is particularly profitable for high surface area electrodes in supercapacitor applications, as it promotes consistent performance across the entire electrode. This review systematically summarizes the latest advancements in defect engineering via ALD technology in supercapacitors, including the enhancement of conductivity and the increase of active sites in supercapacitor electrode materials through ALD, thereby improving specific capacitance and energy density of the supercapacitor device. Furthermore, we discuss the underlying mechanisms, advantages, and future directions for ALD in this field.

This paper describes the development of a new kind of two-dimensional high-resolution imaging integrated circuit. It is used in conjunction with micro-channel plate (MCP) electron multipliers. The electron detection array IC (EDAIC) consists of a two-dimensional array of charge sensing circuits each covered by its own m aluminium electrode on the IC surface. These electrodes are used to collect electronic charge from the MCP channel outputs. The sensors are arranged and accessed in a DRAM-like manner and can be configured to generate either an analogue or a digital output. The EDAIC device is a multiple, simultaneous, event detector suitable for medium-count-rate applications and was originally developed for use in an x-ray photoelectron spectrometer.

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

We describe the synthesis, characterization, and application of nanocomposite, tunable resistance coatings consisting of conducting, metallic nanoparticles embedded in an amorphous dielectric matrix. These films are comprised of M:Al2O3 with M=Mo or W, and are prepared by atomic layer deposition (ALD) using alternating exposures to trimethyl aluminum and H2O for the Al2O3 ALD and alternating MF6/Si2H6 exposures for the metal ALD. By varying the ratio of ALD cycles for the metal and the Al2O3 components in the film, we can tune precisely the resistance of these coatings over a very broad range from 105-1012 Ohm.cm. These films exhibit ohmic behavior and resist breakdown even at high electric fields of 107 V/m. Moreover, the self-limiting nature of ALD allows us to grow these films inside of porous substrates and on complex 3D surfaces. As a result of these qualities, our nanocomposite films have proved exceptional as resistive coatings in microchannel plate electron multipliers and as charge drain coatings in electron-optical devices.

Due to various applications in electronic and optical fields, considerable efforts have been made to develop ZnO based semiconducting materials. ZnO has a wide and direct band gap of 3.37 eV, large exciton binding energy (60 meV), high mechanical and thermal stabilities, and good electrical conductivity. Therefore, ZnO thin films are intensively investigated and applied in solar cells, piezoelectrical devices, gas and biological sensors, catalysts, and high-efficiency short-wavelength optoelectronic nanodevices. To further enhance the properties of ZnO, researchers have been synthesizing ZnO films doped with aluminum or indium. Al doped ZnO (AZO) thin films have been highly developed featuring non-toxicity, low material cost, good thermal stability, high optical transmittance, and good electrical conductivity. [1, 2, 3] Many techniques have been used to deposit AZO thin films currently, such as sol gel processing, magnetron sputtering, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). Among these film deposition methods, ALD has been extensively investigated for the deposition of thin films of metals, alloys, semiconductors, and oxides. Compared with other techniques, ALD is considered as a novel technique for the deposition of AZO films due to its characteristic feature of self-limiting surface saturating reactions in each ALD cycle. ALD technology consequently and accurately controls the layer thickness with unprecedented atomic level precision, as well as the stoichiometry, composition, uniformity of large areas and maintains excellent conformity over complex surface nanostructures. The other advantage of ALD technology is to introduce each ALD chemical precursor sequentially separated by time to react on the surface of the structure. The concentration of dopant in the ZnO films can be precisely controlled by the number of ALD cycles, so that the physical properties of AZO films, such as carrier density and conductivity, can be adjusted to meet the requirements of different applications. In this study, a Savannah 100 cross-flow thermal ALD reactor was used for the deposition of Al doped ZnO thin films. The precursors of aluminium, zinc and oxygen used in the ALD process for the synthesis of Al doped ZnO thin films were trimethylaluminium (TMA: Al2(CH3)6), diethylzinc (DEZ: (C2H5)2Zn) and DI water. The growth temperature of AZO thin films was maintained at 250 oC. The flow rate of N2, used as a carrier gas, was accurately controlled at 20 sccm. In order to deposit ALD AZO films with various percentages of aluminium, TMA cycles were introduced once in every 30 pulses of DEZ and H2O injection. After deposition, AZO films were annealed in air at 500 oC, 600 oC, and 700 oC for 30 min, respectively. X-ray diffraction (XRD) was performed to characterize the crystal structure of ALD ZnO and AZO films. Field emission scanning electron microscopy (FE-SEM) was used to inspect the morphology of AZO films before and after annealing. The surface roughness was analyzed by atomic force microscopy (AFM). The compositions of AZO thin films were analyzed by energy dispersive X-ray spectroscopy (EDS). The sheet resistivity of AZO films was determined by using four-point probe measurements. Raman spectroscopy and photoluminescence (PL) were used to investigate the properties and detect structures of ALD AZO films. The band gaps of AZO films prepared by the ALD process were analyzed from PL spectroscopy results. The materials property and defect structure of ALD AZO films were investigated by Raman spectroscopy.

Current Generation II Gallium Arsenide (GaAs) image intensifier tube technology requires that the tube microchannel plate (MCP) component have a thin dielectric coating on the side facing the tube's photocathode component. This protective coating substantially reduces the release from the MCP of ions and neutral species, particularly when the image intensifier is operated. The prevention of MCP outgassing is necessary in order ot prevent the poisoning of the Cs:O surface on the GaAs photocathode. Many authors have experimented with omitting the MCP coating. Such experiments have consistently led to an intensifier with a significantly reduced lifetime, due to contamination of the Cs:O layer on the photocathode. Unfortunately the MCP film acts as a scattering cneter to electron transport within the intensifier and effectively reduces the photoelectron detection efficiency. Substantial enhancement of the image intensifier operating parameters is the motivation for the removal of the MCP film. Removal of the MCP film promises to simplify MCP fabrication and enhance the intensifier parameters related to Electro-Optical performance and image quality. This paper presents results showing for the first time that it is possible to fabricate a long lifetime image intensifier with a single unfilmed MCP and achieve improved imaging and performance characteristics.

Neutron Detector Design Based on ALD Coated MCP

Recently promising advances have been achieved with phononic crystal (PnC) nanostructures in thermoelectric materials, because the thermal conductivity of PnC samples is lower compared to non-patterned thermoelectric samples due to phonon-boundary scattering. In this study we report on the successful synthesis of PbTe and PbSe thermoelectric layers on patterned porous silicon substrates by a thermal ALD system. PbTe/PbSe nanolaminates grown on porous silicon membranes have higher Seebeck coefficients than the ones grown on regular planar silicon wafers. The higher Seebeck values result from the lower thermal conductivity k in porous structures, which in turn lead to a higher figure of merit ZT. We demonstrate the feasibility to enhance the figure of merit ZT further by modulating the size and periodicity of the pattern and the thickness of the thermoelectric film in relation to the mean free path (MFP) of the phonons of the thermoelectric material. In our study PbTe and PbSe thin films and nanolaminates were synthesized by Atomic Layer Deposition (ALD) technology on regular planar silicon wafers and on macro-porous silicon templates. ALD is a surface saturating, self-limiting, absolutely conformal thin film synthesis technique reacting two pulsed precursors that enable film growth of one atomic layer per growth cycle. Lead bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2)2), (trimethylsilyl) telluride ((Me3Si)2Te) and (trimethylsilyl) selenide ((Me3Si)2Se) were employed as the chemical ALD precursors for lead, tellurium and selenium, respectively. The surface morphology observations indicate Volmer–Weber growth mechanism of PbTe/PbSe nanolaminates during the thermal ALD deposition process rather than classic layer-by-layer growth. The ALD PbTe/PbSe nanolaminates exhibited complete surface coverage on planar bulk silicon wafers and also inside the pores of microporous silicon membranes. For the case of porous Si templates, the Seebeck measurements in both the horizontal and vertical directions revealed significant enhancement in Seebeck coefficients for PbTe/PbSe nanolaminates synthesized inside strictly periodic lithographically defined porous silicon membranes.

Atomic layer deposition (ALD) technology is introduced to fabricate a high sensitivity refractometer based on an adiabatic tapered optical fiber. Different thicknesses of titanium dioxide (TiO2) nanofilm were coated around the tapered fiber precisely and uniformly under different deposition cycles. Attributed to the higher refractive index of the TiO2 nanofilm compared to that of silica, an asymmetric Fabry–Perot (F-P) resonator could be constructed along the fiber taper. The central wavelength of the F-P resonator could be controlled by adjusting the thickness of the TiO2 nanofilm. Such a F-P resonator is sensitive to changes in the surrounding refractive index (SRI), which is utilized to realize a high sensitivity refractometer. The refractometer developed by depositing 50.9-nm-thickness TiO2 on the tapered fiber shows SRI sensitivity as high as 7096 nm/RIU in the SRI range of 1.3373–1.3500. Due to TiO2’s advantages of high refractive index, lack of toxicity, and good biocompatibility, this refractometer is expected to have wide applications in the biochemical sensing field.

Microchannel plate based detectors are widely used for photon counting spectroscopy and imaging in astronomical, high energy physics and remote sensing applications^1-15. We present progress in the development of imaging cross strip readout detectors using novel microchannel plates functionalized by atomic layer deposition (ALD). ALD microchannel plates have established formats of 10 cm with 10 μm pore sizes and 20 cm with 20 μm pores. ALD MCPs show with high quantum efficiency (>50% @115 nm) using opaque alkali halide photocathodes and very low background levels (0.05 events cm^-2) have been achieved. Readout systems have also evolved and now cross-strip anodes and encoding electronics enable high spatial resolution (<20 μm) at low gain (10⁶) and over large formats (10 cm) with high dynamic range (>5 MHz). These characteristics are essential for UV instrument concepts currently under study for NASA including the Large UV/Optical/IR Surveyor (LUVOIR)¹⁶, the Habitable Exoplanet Imaging Mission (HABEX)¹⁶, and Cosmic Evolution Through UV Spectroscopy (CETUS)¹⁶.

The technique of atomic layer deposition (ALD) has enabled the development of alternative glass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20 × 20 cm), high aspect ratio (60:1 L/d) glass substrates. Furthermore, the use of ALD to deposit functional layers allows the optimal substrate material to be selected, such as borosilicate glass, which has many benefits compared to the lead-oxide glass used in conventional MCPs, including increased stability and lifetime, low background noise, mechanical robustness, and larger area (at present up to 400 cm2). Resistively stable, high gain MCPs are demonstrated due to the deposition of uniform ALD resistive and emissive layers on alternative glass microcapillary substrates. The MCP performance characteristics reported include increased stability and lifetime, low background noise (0.04 events cm−2 s−1), and low gain variation (±5%).

In this article, the Micro-Channel Plate Electron Multiplier is studied to carry out the microcurrent multiplication process in order to solve the short lifetime problem of the Electron Multiplier of the present Cesium Clock. Based on the current parameters of the Micro Channel Plate Electron Multiplier, the gain is enhanced by selecting the structure parameters and the application of the cascade structure, the noise is reduced by the improvement of the structure and handing procedure, the lifetime is enhanced by optimization of the working parameters, thus a high gain, low noise, and long lifetime Micro-Channel Plate Electron Multiplier is obtained, which could improve the performance of the Cesium Clock for the navigation system.

Microchannel plate (MCP) is an important compact two-dimension multiplier for parallel multiplication of charged particles. With the advantages of high temporal resolution, high spatial resolution, high electron gain and compact structure, microchannel plate has become an important potential readout device for cryogenic quantum computing, such as the quantum computation based on floating electrons of liquid helium surface. For the sake of ultra-fast reading, it requires the signal readout time is less than 10^-5 s at a temperature lower than 30K in the cryogenic quantum computing. However, the bulk resistance of MCP multiplier became giant at cryogenic temperature for the property of huge negative temperature coefficient of resistance, almost 10⁵ Gohm at 20K~30K, resulting in a readout time of 10^-2 -1s at cryogenic temperature, which was one of the major bottlenecks for the application of MCPs in the cryogenic quantum computing. In this paper, the bulk resistance of MCPs in two different bismuth contents (1at%, 2.4at%) under the same hydrogen reduction temperatures (730K) were present as the surrounding temperature controlled from 300K to 20K. The cryogenic bulk resistance of MCP was only decreased into 24% with the increase bismuth content from 1at% to 2.4at%, while thereof the normal bulk resistance was decline into 5%. The normal bulk resistance reduced only in the manner of improving the conductivity of conductive layer, could also increase the temperature-resistance sensitivity of MCP, leading an even greater temperature coefficient of resistance, which deteriorated the stability of readout in the cryogenic quantum computing.