DFT study of halogenated InTeX (X = Cl, Br and I) monolayers: promising 2D materials for nanoelectronics.

This study presents a theoretical investigation into the phase stability, electronic, and optical properties of off-stoichiometric Zr_{x}Ti_{1-x}IrSb (x = 0, 0.0625, 0.1875, 0.25, 0.50, 0.75, 1) compounds. Using first-principles calculations, we explore how varying Zr and Ti concentrations can tune the electronic and optical properties of these half-Heusler alloys. The Structural, optical, and electronic properties were meticulously analyzed with both the GGA-PBE and Meta-GGA-SCAN approximations, as implemented in the Vienna Ab initio Simulation Package (VASP). The dynamical stability of these compounds was assessed using the Phonopy package. Our findings reveal that these alloys exhibit semiconductor behavior with tunable band gaps, and their optical properties show significant variation across different compositions, particularly in the visible light range. The compounds also demonstrate robust dynamical stability, indicating their potential for practical applications in electronic and optoelectronic devices. These results underscore the versatility of Zr_{x}Ti_{1-x}IrSb alloys and highlight their promise for next-generation technology.

Strain engineering is a promising strategy for tailoring the properties of two-dimensional (2D) materials. Despite the challenge of interlayer cleavage due to weak van der Waals interactions, by using in situ transmission electron microscopy, we demonstrate that large uniaxial tensile strain can be applied to black phosphorus (BP) not only along the zigzag (ZZ) and armchair (AC) directions but also in the out-of-plane (OP) direction. Notably, the maximum tensile strain along the OP direction reaches 5.0%, comparable to that along ZZ and AC directions. Moreover, a negative Poisson's ratio is directly observed between OP/AC and AC/OP directions, indicating strong elastic coupling originating from interlayer–intralayer electron redistribution under tensile strain. Interestingly, different from tensile strain along ZZ or AC, the bandgap of BP is linearly tunable under OP tensile strain. This work underscores OP tensile strain offering avenues for tuning electronic, optical, and magnetic properties of 2D materials and potential applications in strain electronics and flexible electronics.

Rapidly emerging two-dimensional (2D) atomic layer crystals exhibit diverse, tunable electronic properties. They appear to be more flexible than 3D crystals with greater versatility and improved functionality in a wide range of potential applications. Among these 2D materials, metallic crystals are relatively unexplored although two allotropes of gallenene (2D gallium) have been synthesized on a range of substrates. Based on these experimental findings, we investigate systematically the group 13 metals using first-principles density functional theory calculations and an unbiased structural search. In this study, the electronic structure, bonding characteristics, and phonon properties of predicted 2D allotropes of group 13 metals are calculated, including the expected effects of strain induced by substrates on the dynamical stability. Theoretical results predict that most group 13 elements have one or more stable 2D allotropes with the preferred allotrope depending on the cell shape relaxation and strain, indicating that the substrate will determine the overall allotrope preferred. This demonstrates a new avenue for the discovery of thermodynamically stable 2D metallic layers, with properties potentially suitable for electronic and optoelectronic applications.

Tunable magnetic and electronic properties of the Cr-based MXene (Cr2C) with functional groups and doping

How is flexible electronics advancing neuroscience research?

Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

In recent years, two-dimensional (2D) materials have attracted significant attention due to their distinctive properties, including exceptional mechanical flexibility and tunable electronic properties. Via the first-principles calculation, we investigate the effect of strain on the electronic properties of monolayer SnP2S6 and GeP2S6. We find that monolayer SnP2S6 is an indirect bandgap semiconductor, while monolayer GeP2S6 is a direct bandgap semiconductor. Notably, under uniform biaxial strains, SnP2S6 undergoes an indirect-to-direct bandgap transition at 4.0% biaxial compressive strains, while GeP2S6 exhibits a direct-to-indirect transition at 2.0% biaxial tensile strain. The changes in the conduction band edge can be attributed to the high-symmetry point Γ being more sensitive to strain than K. Thus, the relocation of the conduction band and valence band edges in monolayer SnP2S6 and GeP2S6 induces a direct-to-indirect and indirect-to-direct bandgap transition, respectively. Consequently, the strain is an effective band engineering scheme which is crucial for the design and development of next-generation nanoelectronic and optoelectronic devices.

Strain effect on the mechanical and electronic properties of graphene-like B4P4C4 and B2P2C8: First-principles calculation

Structural stability, tunable electronic and optical properties of two-dimensional WS2 and GaN heterostructure: First-principles calculations

Cu-bearing HHCCI interface combined with first principles calculation and corrosive wear resistance

B/N-doped graphdiyne as superior supercapacitor electrode with record high quantum capacitance

Poisson’s ratio is one of the fundamental features of materials, reflecting the transverse strain response to the applied certain axial strain. The materials with a negative Poisson’s ratio, also known as auxetic materials, are rare in nature and attract lots of research interest because of their unusual mechanical behavior and extensive applications in mechanical nanodevices. Here, we proposed and studied a novel hyperbolic two-dimensional graphene-like structure (GLS) showing a negative Poisson’s ratio behavior by first-principles calculation. The thermodynamic, dynamic, lattice dynamic, and mechanical stabilities of the GLS were carefully studied. In addition, we also explored the electronic structure, mechanical characteristics, and optical-electronic characteristics. The GLS not only displays a negative Poisson’s ratio in certain directions but also shows low-gap semiconductor characteristics and superior electronic conductivity. It is a potential sunscreen material because of the outstanding reflection and absorption for ultraviolet and infrared light.

Structural, elastic, anisotropic, electronic, thermal properties and tensile strength of AlTM2Ti (TM = Ni, Fe, Cu, Co, Au) studied by first-principles calculations

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed.

Materials exhibiting a negative Poisson’s ratio have garnered considerable attention due to the improved toughness, shear resistance, and vibration absorption properties commonly found in auxetic materials. In this work, the nonlinear effect on the Poisson’s ratio was derived theoretically and verified by first-principle calculations and molecular dynamics simulations of two-dimensional nanomaterials including graphene and hexagonal boron nitride. The analytic formula explicitly shows that the Poisson’s ratio depends on the applied strain and can be negative for large applied strains, owing to the nonlinear interaction. Both first-principle calculations and molecular dynamics simulations show that the nonlinear effect is highly anisotropic for graphene, where the nonlinearity-induced negative Poisson’s ratio is much stronger for the strain applied along the armchair direction. These findings provide valuable insights into the behavior of materials with negative Poisson’s ratios and emphasize the importance of considering nonlinear effects in the study of the Poisson’s ratio of two-dimensional materials.