Electron Mobility in High-Density Argon Gas

Electronic structures and charge carrier mobilities of boron-graphdiyne sheet and nanoribbons

Chapter 7 - Tribological experiments with friction force microscopy

A new approach to surface modeling and reconstruction is developed which overcomes some important limitations of existing surface representations methods. The approach features two components. The first is a dynamic self-organizing oriented particle system which discovers topological and geometric surface structure implicit in visual data. The oriented particles evolve according to Newtonian mechanics and interact through long-range attraction forces, short-range repulsion forces, and coplanarity, conormality, and cocircularity forces. The second component is an efficient triangulation scheme that connects the particles into a continuous global surface model that is consistent with the inferred structure. A flexible surface reconstruction algorithm is developed that can compute complete, detailed, viewpoint-invariant geometric surface descriptions of objects with arbitrary topology. The algorithms are applied to 3-D medical image segmentation and to surface reconstruction from object silhouettes. >

Splines and deformable surface models are widely used in computer graphics to describe free-form surfaces. These methods require manual preprocessing to discretize the surface into patches and to specify their connectivity. We present a new model of elastic surfaces based on interacting particle systems, which, unlike previous techniques, can be used to sptiL join, or extend surfaces without the need for manual intervention. The particles we use have longrange attraction forces and short-range repulsion forces and follow Newtonian dynamics, much tiie recent computational models of fluids and solids. To enable our particles to model surface elements instead of point masses or volume elements, we add an orientation to each particle’s state. We devise new interaction potentials for our oriented particles which favor locally planar or spherical arrangements. We atso develop techniques for adding new particles automatically, which enables our surfaces to stretch and grow. We demonstrate the application of our new particle system to modefing surfaces in 3-D and the interpolation of 3-D point sets.

Electron transport (ET) properties of a series of fluorinated copper-phthalocyanine (F(16)CuPc) thin films, which were deposited at different substrate temperatures (T(sub)) ranging from 30 to 150 degrees C, have been investigated by quantum mechanical calculations of the reorganization energy (lambda(reorg)), X-ray diffraction (XRD), atomic force microscopy (AFM), and microRaman spectroscopy. Density functional theory calculations were used to predict the vibrational frequencies, normal mode displacement vectors, and electron-vibrational lambda(reorg) for the F(16)CuPc molecule. The electron mobilities (mu(e)) of F(16)CuPc thin films are strongly dependent on the T(sub), and the value of mu(e) increases with increasing T(sub) from 30 to 120 degrees C, at which point it reaches its maximum value. The importance of electron-vibrational coupling and molecular microstructures for ET properties in F(16)CuPc thin films are discussed on the basis of theoretical vibrational lambda(reorg) calculations and experimental observations of resonance Raman spectra. We observed a good correlation between mu(e) and the full-width-at-half-maximum of the vibrational bands, which greatly contributed to lambda(reorg) and/or which reflects the molecular microstructural quality of the active channel. In contrast, the crystal size analysis by XRD and surface grain morphology by AFM did not reveal a clear correlation with the ET behaviours for these different F(16)CuPc thin films. Therefore, we suggest that for organic films with weak intermolecular interactions, such as F(16)CuPc, optimized microscopic molecular-scale parameters are highly important for efficient long-range charge transport in the macroscopic devices.

In recent years, InAs nanowires have been demonstrated with the excellent electron mobility as well as highly efficient near-infrared and visible photoresponse at room temperature. However, due to the presence of a large amount of surface states that originate from the unstable native oxide, the fabricated nanowire transistors are always operated in the depletion mode with degraded electron mobility, which is not energy-efficient. In this work, instead of the conventional inorganic sulfur or alkanethiol surface passivation, we employ aromatic thiolate (ArS(-))-based molecular monolayers with controllable molecular design and electron density for the surface modification of InAs nanowires (i.e., device channels) by simple wet chemistry. More importantly, besides reliably improving the device performances by enhancing the electron mobility and the current on-off ratio through surface state passivation, the device threshold voltage (VTh) can also be modulated by varying the para-substituent of the monolayers such that the molecule bearing electron-withdrawing groups would significantly shift the VTh towards the positive region for the enhancement mode device operation, in which the effect has been quantified by density functional theory calculations. These findings reveal explicitly the efficient modulation of the InAs nanowires' electronic transport properties via ArS(-)-based molecular monolayers, which further elucidates the technological potency of this ArS(-) surface treatment for future nanoelectronic device fabrication and circuit integration.

Electronic mobility limited by optical phonons in symmetric MgxZn1-xO/ZnO quantum wells with mixed phases

Statistical mechanics of a lipid monolayer

We found that the transitions between delocalized electronic states in quantum-dot superlattices with smaller size dispersion can account for higher electron mobility. In particular, we solved for the quantum states of a two-dimensional quantum-dot (QD) superlattice using a one-electron approximation. Electron transport properties were studied by considering hopping transitions among coupled delocalized electronic states. Molecular dynamics simulations were employed to introduce disorders in superlattice configurations as a function of QD size and size dispersion for calculation of electron mobility. The interparticle spacing, size, and temperature dependence of the electron mobility can be well explained within the framework of our analysis.

Bis(2-(2-hydroxyphenyl)benzothiazolate)zinc (Zn(BTZ)(2)) is one of the best white electroluminescent materials used in organic light-emitting diodes (LEDs). Despite a large number of studies devoted to this complex, very little is known about its basic molecular and electronic structures and electron transport properties in LEDs. Therefore, we investigate the structures and electroluminescent properties. The unsolvated single crystal of Zn(BTZ)(2) was grown and its crystalline structure was determined from X-ray diffraction data. The crystal is triclinic, space group P-1, a = 9.4890(19) A, b = 9.5687(19) A, c = 11.685(2) A, alpha = 84.38(3) degrees, beta = 78.94(3) degrees, gamma = 83.32(3) degrees. The structure of the chelate is dimeric [Zn(BTZ)(2)](2) with two isotropic Zn(2+) ion centers having five-coordinate geometry. The present study provides direct evidence for the sole existence of dimeric structure in the powder and the thin film. The dimer is energetically more stable than the monomer. Analysis of the electronic structure of [Zn(BTZ)(2)](2) calculated by density functional theory reveals a localization of orbital and the distribution of four orbital "tetrads". The structural stabilities of both anion and cation and the distribution of the hole in the cation and that of the excess electron in the anion are discussed in terms of theoretical calculations. Strong intermolecular interaction may be expected to enable good electron transport properties as compared with tris(8-hydroxyquinolinato)aluminum.

Electron transport properties in thin InN layers grown on InAlN

Degeneratively doped conductive oxides represent a unique host for exploring the inter-relationship between the properties of charge carriers and their collective plasmonic response. These materials often lack interband transitions that obfuscate interpretation of spectral response in elemental metals, and unlike metals, the electronic transport properties of conductive oxides are easily tunable. This work explores the process-structure-property relationships that regulate surface plasmon resonance (SPR) in sputter deposited indium tin oxide (ITO) thin films. Film deposition conditions are used to regulate film microstructure and tune the electronic mobility to between 7 and 40 cm2 V−1 s−1. Postdeposition annealing in low oxygen partial pressure atmospheres is used to engineer the ITO defect equilibrium and modulate carrier concentrations to between 1020 and 1021 cm−3. These electronic transport properties are modulated with near independence enabling straightforward interpretation of their influence on the SPR response observed in the infrared reflectivity spectrum. Higher electronic mobilities favor narrower surface plasmon absorption bands, while higher carrier concentrations favor higher absorption band frequencies. A simple free electron model, having only electronic carrier density and electronic mobility as variables, can be used to describe ITO’s dielectric response. Calculations that combine this dielectric function and the Fresnel equations provide simulated reflectivity spectra that match experimental data with remarkable accuracy. Because these spectra use no fitting parameters and are calculated with well-studied material properties, it opens the opportunity for future design of plasmonic response in advanced material systems including degeneratively doped semiconductors, silicides, and nitrides.

We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

We investigated the dependence of temperature and self-heating on electron mobility in ultrathin body fully depleted silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors as a function of silicon thickness by analyzing their electron states and electrical characteristics. We found that as the temperature increases, electron mobility decreases regardless of the silicon thickness. We also found that there is a less decrease when the silicon thickness is less than 3 nm than when it is greater than 3 nm. This is because there is a greater electron occupancy in a twofold valley. We demonstrated that the quantum size-effect, i.e., the higher electron mobility in silicon with a thickness less than 3 nm caused by the size-effect, can be eliminated by self-heating.

GaN is known as the third generation of semiconductor and holds promising applications. In this present work, one-dimensional zigzag nanotubes derived from GaN are studied in depth, mainly focusing on their chemical bondings, electronic structures, transport properties, and the regulating effects under gate voltage for nanotubes doped with low-concentration non-metallic atoms in main-groups IIIA-VIIA. Some important findings are obtained, such as the chemical bonds around a heteroatom atom, and their average bond length, binding energy, and chemical formation energy are closely related to the atomic number (the atomic radius), and the charge transfer between heteroatom and nanotubes is directly related to their relative electronegativity. More importantly, we find that although the intrinsic nanotube is a semiconductor, when it is doped with non-metallic atoms, the electronic phase of nanotube possesses an obvious odd-even effect. Namely, after being doped by hetero-atoms in main-groups IIIA, VA, VIIA, nanotubes are semiconductors, but they becomes metals after having been doped with hetero-atoms in main-groups IVA and VIA. This phenomenon has a close relation with the lone-paired electronic state. And also, It is found that with atom doping, the difference between carriers’ mobilities (the hole mobility and electron mobility) of semiconducting tubes can be regulated to reach one order of magnitude, especially the hole mobility and electron mobility can be obviously enhanced by a higher gate voltage. For example, when the gate voltage is increased to 18 V, the hole mobility rises nearly 20 times compared with the case without gate voltage.