GaN МИС малошумящего усилителя Х-диапазона

The swift implementation of 5G networks has escalated the need for high-performance radio frequency (RF) components, especially within the sub-6 GHz region. Low Noise Amplifiers (LNAs) are essential in 5G receiver systems, where concurrently attaining acceptable noise figure, gain, and stability poses a considerable difficulty. This study tackles these problems through a comparative examination of two promising transistor technologies for LNA design at 3.5 GHz: Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) and Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT). Two LNA circuits were designed and simulated using Advanced Design System (ADS) software: one employing the CG2H40025 GaN HEMT and the other utilizing the MMG3006NT1 InGaP HBT. Simulation results indicate that the GaN HEMT-based LNA attained a gain of 17.09 dB, a noise figure of 1.299 dB, and a stability factor of 1.083, whereas the InGaP HBT-based LNA exhibited a gain of 17.84 dB, a noise figure of 1.906 dB, and a stability factor of 1.255. This comparative analysis offers significant insights into the advantages and compromises of each technology for 5G LNA architecture. According to these findings, GaN HEMT technology is favored for its enhanced noise performance, rendering it more appropriate for noise-sensitive 5G sub-6 GHz applications, although its somewhat reduced gain. This analysis provides a pragmatic reference for RF engineers in choosing the optimal transistor technology for particular 5G sub-6 GHz LNA design specifications.

A low noise amplifier (LNA) is the first active stage in a receiver, which plays a key role in the entire receiver. In this paper, LNAs with three different kinds of devices - enhancement mode (E-mode) Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT), depletion mode (D-mode) Gallium Nitride (GaN) high electron mobility transistor HEMT, and Silicon-On-Insulator (SOI) CMOS- are designed, simulated, analyzed and compared. For a fair comparison, the LNAs of the same circuit topology are built up with noiseless matching components, and their performances are compared in the terms of both important specifications and a universal Figure of Merits (FOM). The simulation results show that: the LNA with using E-mode GaAs PHEMT achieves the lowest noise figure (NF) of 0.51 dB while the SOI-CMOS gets the best FOM of among the three devices. To our limited knowledge, this paper is one of few attempts to compare devices' capabilities in building up wide bandwidth LNAs with resistor feedback networks.

The self-heating effect has long been a persistent issue for high electron mobility transistors based on gallium nitride due to their inherently poor heat dissipation capability. Although a wide variety of thermal management solutions has to date been proposed, the problem of the extremely non-uniform heat dissipation at the micrometer scale is still challenging. It has recently been demonstrated, however, that the performance of gallium nitride high electron mobility transistors can be substantially improved by the introduction of various heat-spreading elements based on graphene, boron nitride or diamond. In this paper, using numerical simulation, we carried out a design optimization procedure for a normally-off gallium nitride high electron mobility transistor containing both graphene and cubic boron nitride layers. First, a screening experiment based on a very economical Plackett-Burman design was performed in order to find the most critical geometric parameters that influence the dc characteristics. After that, a full two-level factorial experiment consisting of three factors was implemented and an optimized parameter set was yielded. By applying this set, the output power was increased by 11.35%. The combination of the most significant parameters does not include any factors related to the heat-spreading layers. Keywords: gallium nitride, high electron mobility transistor, optimization, Plackett-Burman design, screening experiment, self-heating.

A linear high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) is designed with 0.15 μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. To keep the linear characteristics of the power stage, 2:4:8 staging ratio of 8 × 50 μm unit transistor is adapted for the 3-stage HPA MMIC. The MMIC delivers P3 dB of 39.5 dBm with a PAE of 35% at 21.5 GHz. Linear output power (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</sub> ) meeting IMD3 of -25 dBc is 37.3 dBm with an associated PAE of 29.5%. The MMIC dimensions are 3.4 mm × 2.5 mm, generating an output power density of 1049 mW/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

This article presents a Ku‐band Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) and RF front‐end module for space applications. LNA MMIC was developed with utilizing 0.07 μm GaAs m‐HEMT process. Noise Figure (NF) and gain results of LNA module were measured as 1.3 and 43 dB, respectively and OIP3 was measured as +20 dBm at the ambient temperature. The LNA module was tested in the temperature range between −25°C and 75°C and small signal gain and NF variation were less than 3 and 0.8 dB, respectively. This article describes the MMIC LNA design, mechanical chassis design, WR75 waveguide‐to‐microstrip design, and measurement results of the LNA front‐end module.

This paper presents an 80-122-GHz low-noise power amplifier (LNPA) monolithic microwave integrated circuit (MMIC) fabricated in a 70-nm gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology. The LNPA MMIC contains a three-stage low-noise-optimized input stage and a balanced two-stage power-optimized output stage. From 80 to 122 GHz, the amplifier provides more than 24 dB of small-signal gain and a noise figure (NF) of 3.5-5.5 dB. For an extended upper band edge (87–124 GHz), the LNPA yields an NF of below 4 dB with an average value of 3.7 dB. At 1-dB gain compression, the MMIC exhibits an output power (Pout) in the range of 18.9-21.2 dBm. For a measured bandwidth of 80–122 GHz and an input power of 0 dBm, the amplifier yields a Pout of 22.8-24.3 dBm with a corresponding power-added efficiency of 9.6-13.4 %. With these performance parameters, the presented LNPA MMIC demonstrates the lowest GaN-based NF above 105 GHz, while providing a higher Pout than other LNAs at these frequencies.

In this work the design and integration of 60 GHz monolithic microwave integrated circuit (MMIC) transceiver using 0.15 um Gallium Nitride (GaN) Qorvo process that will support the Wireless Gigabit Alliance (WiGig)/802.11ad radio specifications will be presented. The wideband GaN Power Amplifier (PA) can operate at 60–65 GHz with output power of 27 dBm and large signal gain of 23.5 dB. The wideband Low Noise Amplifier (LNA) has a small signal gain of 16 dB with a noise figure (NF) of 1 dB. The GaN PA and LNA are integrated to a nano-ferrite on-silicon CMOS circulator to construct a single front-end transceiver module.

: A key component of microwave telecommunication systems is the power amplifier (PA). The design parameters of a communication system, such as link performance, power budget, and thermal design are typically driven by the power amplifier's linearity, output power, and efficiency. These design parameters of PA are the key to ensuring an efficient system because the PA is the most power-consuming circuit in the communication system. In an effort to have students involved in this research area, the International Microwave Symposium (IMS) sponsored by IEEE Microwave Theory and Technique Society (MTT-S) has introduced a High Efficiency Power Amplifier Design Competition. In this report, we present a 2.8-GHz, 5-W, highly efficient PA based on a wide bandgap gallium nitride (GaN) high electron mobility transistor (HEMT) device (CGH 40010f from CREE). The PA design was presented at the 2010 IMS Student Design Competition and achieved the competition goal of output power greater than 5 W with a measured power added efficiency (PAE) of 61% at 2.8 GHz.

This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the United States. Measurements of the GaN transistors were collected on two independent noise parameter (NP) systems from 8–50 GHz and 75–110 GHz. The resulting raw NPs were stitched together to yield ultra broadband 8–110 GHz smoothed NPs. Several comparisons and summaries of the minimum noise figure and associated gain are reported for the six different GaN technologies. This work seeks to provide an initial database for noise and gain of GaN HEMTs at mm-wave frequencies to quantify progress on technology in the future.

This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features: high power compression, constant output power, tunable threshold power level, and insensitivity to frequency variation. With a low drain voltage (Vds) of 3 V, constant output power of 9.9 dBm was acquired for input power over its threshold power of 3.2 dBm. Power compression of 13.3 dB was achieved at the input power of Pin = 20 dBm. In addition, adjustable threshold power level Pth could be obtained by merely tuning drain voltage. Transducer gain measurement results were employed to explain the occurrence of output power saturation. Relatively higher Pth was linked to wider gate voltage swing which extended the linear region of the Pout-Pin characteristic. In addition, the GaN HEMT’s power compression capability shows great immunity to frequency variation, which is promising for protecting sensitive receiver components at both low and high frequencies. Finally, the phase shift of the GaN HEMT RP at high input power was measured and analyzed by the nonlinear behaviors of input capacitance Cgs.

Design of on-chip 15~18 GHz ultra low noise amplifier

A compact 10 ~ 13 GHz low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using simple matching and bias circuits is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. In order to reduce the chip size and simplify the structure of the LNA, the matching and bias circuits were combined functionally and structurally together and the meandered microstriplines were used. And the combined circuits also contributed to decrease the noise figure of the LNA. Therefore, the measured noise figures of the LNA are almost equal to the minimum noise figure of 2 x 100 μm device which was used for the first stage of the LNA. And also the chip size of the fabricated LNA is 1.7 x 0.8 mm 2 including two ground- signal-ground (GSG) pads and the DC pads on the chip. The LNA shows a noise figure of 1.7 ~ 2.1 dB with a gain of 19 ~ 26 dB across the 10 ~ 13 GHz frequency range. In continuous wave (CW) conditions, it presents a saturated output power of 29 ~ 34 dBm for 10 ~ 13 GHz and also the output third-order intercept point (OIP3) of 42 dBm at 11.4 GHz.

A 22-30 GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise Figure (NF) of 0.87-1.51 dB is presented in this work. This LNA was fabricated with 100 nm gate-length AlN/GaN on silicon (Si) microwave monolithic integrated circuit (MMIC) process. The linear gain is 14-17 dB with input/output return loss over 10 dB across the band. To investigate the robustness of this LNA, 1 Watt continuous wave (CW) at 27 GHz was stressed on the input port of LNA. The decrease of gain and increase of NF were found after stress. Experimental research and first-principles calculations were carried out to investigate the physical mechanism of theses degradations, which indicate that the dehydrogenation of VGaH3 complexes in GaN channel caused the decrease of gain and the creation of VAl-H4 in the aluminum nitride (AlN) barrier caused the increase of NF.

A 23–30-GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise figure (NF) of 0.87–1.51 dB is presented in this article. This LNA was fabricated with 100-nm gate-length GaN-on-silicon (GaN/Si) microwave monolithic integrated circuit (MMIC) process. The linear gain is 14–17 dB within the band. For investigating the robustness of this LNA, 1-W continuous wave (CW) at 27 GHz was stressed on the input port of the LNA. The gain decreased, and the NF increased after stress. Experimental research and first-principles calculations were carried out to investigate the physical origin of the degradation. The dehydrogenation of $\text{V}_{{\text {Ga}}}$ -H3 complexes causes the decrease of gain, and the creation of $\text{V}_{{\text {Al}}}$ -H4 in the AlN barrier is supposed to cause an increase of NF.

This letter presents the design, performance, and analysis of four low-noise amplifier (LNA) monolithic microwave integrated circuits (MMICs) operating in W-band. Two LNA designs were fabricated in two variations of a 20-nm gate-length metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) technology each. While for the first technology version the heterostructure is directly grown on the final gallium arsenide (GaAs) wafer, the second version uses direct wafer bonding to transfer the III-V heterostructure after the epitaxial growth to a silicon (Si) substrate. Based on the measured noise figure (NF) of the four MMICs over a comprehensive set of bias conditions, the impact of short-channel effects on the RF performance and possible improvements are analyzed. The first LNA covers an octave bandwidth with more than 15 dB of gain and an average NF (75-105 GHz) of 3.5 dB on a Si substrate. At 80 GHz, the second amplifier exhibits minimal NFs of 2.3 and 2.5 dB on GaAs and Si substrates, respectively. Compared to previously reported MOS- or Si-based technologies, the presented LNAs demonstrate state-of-the-art noise performance emphasizing the importance of electron confinement for highly scaled transistor technologies.