GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which in turn reduce the growth temperature. Trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnT) were used as a source of Ga, N and Mn, respectively, while hydrogen gas was used as a carrier gas for both TMGa and CpMnT. The effect of growth temperature and Mn incorporation on structural properties and surface morphology of GaN:Mn films are presented. The growth of GaN:Mn thin films were conducted at varied growth temperature in range of 625 o C to 700 o C and the Mn/Ga molar fraction in the range of 0.2 to 0.5. Energy dispersive of X-ray (EDX) and X-ray diffraction (XRD) methods were used to analyze atomic composition and crystal structure of the grown films, respectively. The surface morphology was then characterized using both atomic force microscopy (AFM) and scanning electron microscopy (SEM) images. A systematic XRD analysis reveal that maximum Mn incorporation that still produces single phase GaN:Mn (0002) is 6.4 % and 3.2 % for the film grown at 650 o C and 700 o C, respectively. The lattice constant and full width at half maximum (FWHM) of the single phase films depend on the Mn concentration. The decrease in lattice constant accompanied by the increase in FWHM is due to incorporation of substitutional Mn on the Ga sub-lattice. The maximum values of doped Mn atoms incorporated in the wurtzite structure of GaN:Mn as substitutional atoms on Ga sub-lattice are 2.0 % and 2.5 % at 650 o C and 700 o C, respectively. AFM and SEM images show that the film grown at lower growth temperature and Mn concentration has a better surface than that of film grown at higher growth temperature and Mn concentration.

Characterization of growth behavior and structural properties of TiO 2 thin films grown on Si(1 0 0) and Si(1 1 1) substrates

The AlGaAs photocathode can be used in the field of underwater optical communication because of its fast response speed and adjustable spectral response range. In order to solve the problem that the low light absorption of the AlGaAs emission layer limits the improvement of its quantum efficiency, the distributed Bragg reflector (DBR) structure is used to reflect the light at a specific wavelength back to the emission layer to further increase the absorption rate, thus improving the response capability of the photocathode at 532 nm. The spectral response model of the AlGaAs photocathode with DBR structure is obtained by solving one-dimensional continuity equation. The optical model of the AlGaAs photocathode with enhanced response at 532 nm is established by the finite-difference time-domain method. The effects of the sublayer periodic pairs, the sublayer material and the thickness of emission layer and buffer layer on the absorption rate of emission layer are analyzed. The light absorption distributions of AlGaAs photocathode with and without DBR structure are compared, and the influence mechanism of DBR structure on the blue-green light absorption capacity of AlGaAs photocathode emission layer is clarified, which can provide a theoretical basis for designing its structural parameters. The results show that the DBR structure with a periodic pair of 20 and Al<sub>0.7</sub>Ga<sub>0.3</sub>As/AlAs has the best reflection effect on 532 nm light. Based on the DBR structure, when the thickness of the emission layer and buffer layer are 495 nm and 50 nm, respectively, the emission layer has the best absorption rate of 532 nm light. Furthermore, two kinds of AlGaAs photocathodes with and without DBR structure are prepared by the metal-organic chemical vapor deposition technology, and the reflectivity and profile structure of the grown samples are characterized. Then the Cs/O activation experiments are performed to compare the spectral response curves. It is found that the spectral response of the AlGaAs photocathode sample with DBR structure at 532 nm wavelength is about twice that of the sample without DBR structure.

Low-temperature growth and n-type doping of CdTe by the remote-plasma-assisted metalorganic chemical vapor deposition method

ABSTRACTCreation of nanoscale building blocks with various sizes and shapes are critical for the progress of nanotechnology. The synthesis of GaN nanowires by chemical vapor deposition (CVD) using Ga and NH3 as source materials on SiO2/Si substrate was systematically studied. Various types of catalyst materials, including gold (film and nanoparticle), nickel (film and nanoparticle), silver, cobalt and iron, have been used. The growth runs have been carried out at temperatures between 800 and 1100oC under two different carrier gases; H2 and Ar. Initial growth runs using Ar as carrier gas resulted in microscale-faceted nanostructures and short nanorods regardless of the growth temperature or reactor pressure. We have successfully achieved ultra-dense interwoven long nanowires using hydrogen as carrier gas at 1100oC. In fact, the yield has been very high for both gold and nickel catalysts. It should be emphasized that combination of high-temperature and hydrogen has resulted in ultra-dense interwoven long GaN nanowires. These results suggest a radical change in growth kinetics at high temperatures in the presence of H2. The GaN nanowire diameters are in the range of 15 nm to 50 nm and lengths up to hundred microns. The grown nanowires have been characterized by scanning electron microscopy (SEM with EDS), atomic force microscopy (AFM), x-ray diffraction (XRD), and transmission electron microscopy (TEM).

(Ba, Sr)TiO 3 (BST) thin films have been grown on planar Ir/Si and Pt/Si substrates and on three-dimensional (3D) Ir electrodes by metalorganic chemical vapor deposition using two kinds of β-diketonate-based BST precursors. Film growth was studied as a function of film thickness, composition, and substrate temperature. Growth rate was monitored by in situ spectroscopic ellipsometry. The BST films were characterized ex situ by a variety of techniques including x-ray photoelectron spectroscopy, Auger electron microscopy, atomic force microscopy, transmission and scanning electron microscopy, x-ray diffraction, and impedance analyzer. The results reveal that the two sets of BST precursors, albeit slightly different, show quite different reactivities that strongly affect the step coverage on the 3D structure. However, different reactivities have no apparent effect on the microstructure, surface morphology, and dielectric properties of the stoichiometric BST films. These properties strongly depend on the film composition, substrate material, and growth temperature. In general, the BST films grown on Pt exhibit better crystalline quality, surface smoothness, and dielectric properties compared to those grown on Ir under the optimal growth conditions.

Structure evolution in Ag/Ni multilayers grown by ultra high vacuum DC magnetron sputtering

Investigation of the superelastic behavior of a Ti-16Zr-13Nb-2Sn sputtered film by nanoindentation

Ti thin films deposited by high-power impulse magnetron sputtering in an industrial system: Process parameters for a low surface roughness

Accumulative damage during early stage of fatigue in AISI 321 steel was investigated by eddy current test, atomic force microscopy, X-ray diffraction and transmission electron microscopy. Surface slip, dislocation, and strain-induced martensite were determined as the main damage types. Moreover, damage during the fatigue was found to be increased with the increasing fatigue cycles and load amplitude. The contribution of strain-induced martensite to the total eddy current amplitude (Vmax) was enhanced with the increase in its volume fraction. Finally, a linear relationship between Vslip and the height of surface slip was established.

Enhanced optical absorption of monolayer WS2 using Ag nanograting and distributed Bragg reflector structures

Structural analysis of distributed Bragg reflector mirrors

The present study gives an overview of some of the major aspects for consideration in the characterization of nanomaterials (NMs). Part 1 focuses on the measurement of particle size and size-related parameters using several analytical techniques such as transmission electron microscopy, atomic force microscopy, dynamic light scattering, X-ray diffraction, and Brunauer, Emmett, and Teller surface area measurements as applied to commercially available cerium oxide nanoparticles (NPs) and microparticles (MPs). Part 2 (see companion paper) considers nonsize-related characterization and analysis. The results are discussed in relation to the nature of the sample and preparation, and the analytical principles, limitations, and advantages of each technique. Accurate information on the particle size of the different fractions of a sample can be obtained by using a combination of different types of microscopy, spectroscopy, separation, and other techniques; this should inform ecotoxicological and environmental studies. The good agreement between the measured primary particle size of the NPs (~15 nm) by atomic force microscopy, transmission electron microscopy, X-ray diffraction, and Brunauer, Emmett, and Teller suggests that the primary particles are formed of semispherical single crystals. For MPs, all measurements agree that they are large particles in the range above the NPs (100 nm), with some difference between the measured sizes, possibly as a result of polydispersity effects. Additionally, our findings suggest that atomic force microscopy and transmission electron microscopy prepared by centrifugation methods provide consistent data at low concentrations when dynamic light scattering fails.

We have developed a single-frequency tapered laser emitting at a wavelength of 1.55 pm. The ridge waveguide section enables only one lateral mode, while the DBR structure provides single ffequency operation. This tapered laser has 20 dl3 side-mode suppression at continuous wave (CW) power levels up to 0.6 W. 80 'YO of the power from this device remains in the central lobe of the far-field at a power level of 0.5 W. A Gaussian contact over the tapered section matches the current distribution to the lateral optical profile reducing self-focusing and beam instability effects. We are also developing both distributed feedback (DFB) and distributed Bragg reflector (DBR) angled-stripe semiconductor laser designs for high power. To obtain power levels approaching 10 W, we are using a lenslike waveguide that causes divergence along the lateral direction along with a second order grating to provide outcoupling along the surface of the device.

In this study, high performance nitride-based flip-chip (FC) light-emitting diodes (LEDs) using optimized distributed bragg reflector (DBR) were fabricated and compared with conventional FC-LED using silver (Ag) reflector. Most of FCLEDs are using the silver (Ag) as reflector due to its superior reflectance at visual spectrum region. However, A silver has detrimental problems such as electro-chemical migration and agglomerations, which resulting in reliability issues such as degradation of power drop, unstable operating voltage and leakage issues. Our DBR structure was designed to have 99% at whole visible spectrum range (400~750nm), which is higher reflectance than silver reflector (90~95%). Optical power is higher than higher than the Ag-LED up to 30% @ 500mA. As the current increases up to 1A, the gap slightly decreased. Reliability test results show stable optical power, operating voltage, and leakage maintenance.