General References, Diffusion, Electromigration, Point Defects, Dislocations, Planar Defects, Irradiation Effects and Ionic Conduction

General References, Diffusion Processes, Point Defects, Linear Defects, Planar Defects, Irradiation Effects and Ionic Conduction

General References, Diffusion Processes, Electromigration, Point Defects, Linear Defects, Planar Defects, Irradiation Effects and Ionic Conduction

General References, Diffusion Processes, Electromigration, Point Defects, Linear Defects, Planar Defects, Irradiation Effects and Ionic Conduction

Interplay between bulk and intrinsic pinning and commensurability effects in high- Tc superconductors

When potassium dihydrogen phosphate crystals (KH(2)PO(4) or KDP) are illuminated by multi-gigawatt nanosecond pulses, damages may appear in the crystal bulk. One can increase damage resistance through a conditioning that consists in carrying out a laser pre-exposure of the crystal. The present paper addresses the modeling of laser-induced damage and conditioning of KDP crystals. The method is based on heating a distribution of defects, the cooperation of which may lead to a dramatic temperature rise. In a previous investigation [Opt. Express 15, 4557-4576 (2007)], calculations were performed for cases where the heat diffusion was permitted in one and three spatial dimensions, corresponding respectively to planar and point defects. For the sake of completeness, the present study involves the 2D heat diffusion that is associated with linear defects. A comparison to experimental data leads to the conclusion that 1D calculations are the most appropriate for describing the laser-induced damage in KDP. Within this framework, the evolution of the damage density is given as a function of the laser energy density and an in-depth analysis of the results is provided based on simple analytical expressions that can be used for experimental design. Regarding the conditioning, assuming that it is due to a decrease in the defect absorption efficiency, two scenarios associated with various defect natures are proposed and these account for certain of the observed experimental facts. For instance, in order to improve the crystal resistance to damage, one needs to use a conditioning pulse duration shorter than the testing pulse. Also, a conditioning scenario based on the migration of point (atomic-size) defects allows the reproduction of a logarithmic-like evolution of the conditioning gain with respect to the number of laser pre-exposures. Moreover, this study aims at refining the knowledge regarding the precursor defects responsible for the laser-induced damage in KDP crystals. Within the presented modeling, the best candidate permitting the reproduction of major experimental facts is comprised of a collection of one-hundred-nanometer structural defects associated with point defects as for instance cracks and couples of oxygen interstitials and vacancies.

Al-excessive feldspars: a hypothetical model with octahedrally coordinated Al in planar defects

Local states of anisotropic crystals with point and plane defects

The chemical aspects of defects of relevance to inorganic crystalline solids are described, especially the close links with the composition of crystalline nonmetallic inorganic nonstoichiometric compounds. The discussion begins with a description of simple point defects in stoichiometric materials and the relationship between the population of these defects and the Gibbs energy of formation of the defects. This includes defects in monatomic structures and balanced populations of point defects, Frenkel and Schottky defects, in binary compounds. Superionic compounds that contain quasi‐liquid cation arrays are considered as extreme cases of these simpler defect populations. Nonstoichiometric compounds treated from the standpoint of small populations of point defect populations are considered, including color centers. Defect chemistry, the incorporation of point defects into chemical nomenclature, is described, including the Kroger–Vink notation and the construction of Brouwer diagrams. Grossly nonstoichiometric compounds, including those that can be considered to contain point defects or structurally organised defect clusters, such as the iron oxide wüstite, and the defect fluorite structures are illustrated. Extended defects portray a wider view of defect chemistry, in which planar faults and intergrowths are prominent structural features of many complex inorganic solids. To illustrate planar defects, examples are taken from crystallographic shear phases, twinned structures, intergrowth structures, and the niobium oxide block structures. Structures containing pentagonal columns linked by vertices provide an example of structures that contain columnar defects. Examples of inorganic solids that possess more than one defect type are taken from layered perovskite phases, tungsten bronzes, and high‐temperature ceramic superconductors. The final section is concerned with structures that were once described as containing defects but that have recently been found to be essentially defect free. These materials, in which defects are eliminated by the device of continuous structural modulation affecting one part of the structure, are widespread over many classes of inorganic solids. Examples drawn from oxides related to tantalum pentoxide, layer misfit phases, and anion‐excess fluorite‐related materials.

The development of tin-lead alloyed halide perovskite nanocrystals (PNCs) is highly desirable for creating ultrastable, eco-friendly optoelectronic applications. However, the current incorporation of tin into the lead matrix results in severe photoluminescence (PL) quenching. To date, the precise atomic-scale structural origins of this quenching are still unknown, representing a significant barrier to fully realizing the potential of these materials. Here, we uncover the distinctive defect-related microstructures responsible for PL quenching using atomic-resolution scanning transmission electron microscopy and theoretical calculations. Our findings reveal an increase in point defects and Ruddlesden-Popper (RP) planar faults with increasing tin content. Notably, the point defects include a spectrum of vacancies and previously overlooked antisite defects with bromide vacancies and cation antisite defects emerging as the primary contributors to deep-level defects. Furthermore, the RP planar faults exhibit not only the typical rock-salt stacking pattern found in pure Pb-based PNCs but also previously undocumented microstructures rich in bromide vacancies and deep-level cation antisite defects. Direct strain imaging uncovers severe lattice distortion and significant inhomogeneous strain distributions caused by point defect aggregation, potentially breaking the local force balance and driving RP planar fault formation via lattice slippage. Our work illuminates the nature and evolution of defects in tin-lead alloyed halide perovskite nanocrystals and their profound impact on PL quenching, providing insights that support future material strategies in the development of less toxic tin-lead alloyed perovskite nanocrystals.

Engineering lattice defects have emerged as a promising approach to effectively modulate the functionality of devices. Particularly, antiphase boundaries (APBs) as planar defects have been considered major obstacles to optimizing the ionic conductivity of mixed ionic-electronic conductors (MIECs) in solid oxide fuel applications. Here our study identifies topotactically transformable APBs (tt-APBs) at the atomic level and demonstrates that they exhibit higher ionic conductivity at elevated temperatures as compared to perfect domains. In-situ observation at the atomic scale tracks dynamic oxygen migration across these tt-APBs, where the abundant interstitial sites between tetrahedrons facilitate the ionic migration. Furthermore, annealing in an oxidized atmosphere can lead to the formation of interstitial oxygen at these APBs. These pieces of evidence clearly clarify that the tt-APBs can contribute to oxygen conductivity as anion diffusion channels, while the topotactically non-transformable APBs cannot. The topotactic transformability opens the way of defect engineering strategies for improving ionic transportation in MIECs.

: A device is described which was designed to detect the diffuse X-ray scattering caused by point defects in a crystal. Tests concerning the sensitivity of the apparatus are summarized, as are results of its application to problems involving the degree of order in diffuse solid solutions and the effects of irradiation on crystals.

Ionic conductivity and point defects in pure and doped MnF 2 and MgF 2 single crystals

Frederick Seitz

Abstracts: General References: Creep; Ductile Fracture; Elastic Constants; Elastic Deformation and Yield Point; Environmental Effects; Fatigue; Hardness; Irradiation Effects

The damage buildup until amorphization in wurtzite GaN films under kev light (12C) and heavy (197Au) ion bombardment at room and liquid nitrogen (LN2) temperatures is studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing of irradiation defects even during heavy ion bombardment at LN2 temperature. Amorphization starts from the GaN surface with increasing ion dose for both LN2 and room-temperature bombardment with light or heavy ions. A strong surface defect peak, seen by RBS/C, arises from an amorphous layer at the GaN surface, as indicated by TEM. The origin of such an amorphous layer is attributed to the trapping of mobile point defects by the GaN surface, as suggested by the flux behavior. However, in the samples implanted with light ions to low doses (1 × 1015 cm-2), no amorphous layer on the GaN surface is revealed by TEM. Damage buildup is highly sigmodal for LN2 temperature irradiation with light or heavy ions. Formation of planar defects in the crystal bulk is assumed to provide a "nucleation site" for amorphization with increasing ion dose during irradiation at LN2 temperature. For room-temperature bombardment with heavy ions, the damage in the GaN bulk region saturates at a level lower than that of the amorphous phase, as measured by RBS/C, and amorphization proceeds from the GaN surface with increasing ion dose. For such a saturation regime at room temperature, implantation damage in the bulk consists of point-defect clusters and planar defects which are parallel to the basal plane of the GaN film. Various defect interaction processes in GaN during ion bombardment are proposed to explain the observed, somewhat unexpected behavior of disorder buildup.