Hybrid Mode-Space–Real-Space Approximation for First-Principles Quantum Transport Simulation of Inhomogeneous Devices

Herein, a highly practical first‐principles approach for studying phonon transport across various materials, ranging from low‐dimensional systems to three‐dimensional bulk structures, as well as nanostructures, is presented. This method integrates the nonequilibrium Green's function (NEGF) formalism with ab initio calculations of dynamical matrices generated by Quantum Espresso. A detailed technical approach for extracting atomistic force constants and forming dynamical matrices that adhere to the tri‐diagonal technique within the NEGF framework is provided. Additionally, an efficient method for constructing dynamical matrices of conventional cells from those of primary cells is introduced, remarkably reducing the computational costs associated with density‐functional theory calculations. The robustness and applicability of this methodology are validated through several case studies.

This paper describes the point defect treatment in nanowire MOSFETs. The 3D Poisson equation is self-consistently coupled to the Schrodinger equation. We adopt the mode-space representation in which the 3D Schrodinger equation is divided into a 2D equation, including the confinement of the cross-section, and an ID equation describing the ballistic transport based on the nonequilibrium Green's function formalism (NEGF). We use the simplest form of the tight-binding theory, with one orbital per atom, and considering only the first-neighbor-interactions. In this framework, equivalent to the ellipsoidal energy band approximation, influence of point defects on electronic transport is discussed.

Recently, some photodetectors based on graphene have been proposed. In all of these works, current generation was carried out by separation of photo-excited carriers using an electric field, either internal or external. In this work, a new method of producing current which is based on different transmission coefficients for electrons and holes when they travel toward any of the two contacts is proposed. To this end, a single Stone–Wales defect close to one of the two contacts was used to break the channel symmetry. In order to confirm the idea, the non-equilibrium Green's function formalism in real space in conjunction with the tight binding method was used in simulations. In addition, to clarify the results, we present a classical model in which different diffusion constants are assumed for the left going and the right going carriers. Additional simulations for different positions of the defect, different lengths of the ribbon, and different bias voltages were performed, and the results are included in this study.

Self assembled quantum dots have shown a great promise as a leading candidate for infrared detection at room temperature. In this paper, a theoretical model of the absorption coefficient of quantum dot devices is presented. Both of bound to bound absorption and bound to continuum absorption are taken into consideration in this model. This model is based on the effective mass theory and the Non Equilibrium Greens Function (NEGF) formalism. NEGF formalism is used to calculate the bound to continuum absorption coefficient. The results of the model have been compared with a published experimental work and a good agreement is obtained. Based on the presented model, the bound to bound absorption coefficient component is compared to the bound to continuum absorption coefficient component. In addition, the effects of the dot dimensions and electron filling on the bound to continuum absorption coefficient are also investigated. In general, increasing the dot filling increases the absorption and decreasing the dots dimensions will increase the absorption and move the absorption peak towards longer wavelengths.

The conductance of a family of ruthenium-octene-ruthenium molecular junctions with different pi conjugation are investigated using a fully self-consistent ab initio approach which combines the nonequilibrium Green's function formalism with density functional theory. Our calculations demonstrate that the continuity of the pi conjugation in the contact region as well as along the molecular backbone affects the junction conductance significantly, showing the advantage of using the ruthenium-carbon double bond as the linkage of conjugated organic molecules.

Redox control of magnetic transport properties of a single anthraquinone molecule with different contacted geometries

Using the non-equilibrium Green's function formalism in combination with density functional theory, we calculated the spin-dependent electronic properties of molecular devices consisting of pristine and hydrogen-terminated zigzag gallium nitride nanoribbons (ZGaNNRs). Computational results show that the proposed ZGaNNR models display multiple functions with perfect spin filtering, rectification, and a spin negative differential resistance (sNDR) effect. Spin-dependent transport properties, spin density and transmission pathways with applied bias values were calculated to understand the spin filter and the sNDR effect. The spin filtering efficiency can be up to -100% or 100% within a large range of biases, and a dual spin filtering effect can also be found in these model devices. The highest rectification ratio reaches 4.9 × 109 in spin-down current of ZGaNNRs with only the passivated nitrogen edge, and only ZGaNNRs with the passivated gallium edge exhibit an obvious sNDR behavior with the largest peak to valley current ratio of 1.25 × 107. The proposed hydrogenated ZGaNNRs can be preferred materials for realizing oscillators, memory circuits and fast switching applications.

Thermoelectric properties of a magnetic semiconductor CuFeS2

Exploring potential two-dimensional monolayers with large photogalvanic effect (PGE) has been of great importance for developing self-powered optoelectronic devices. In this paper, we systematically investigate the generation of PGE photocurrent in chalcogen-based Janus XYZ monolayers (X/Y/Z = S, Se, Te; X ≠ Y ≠ Z) based on non-equilibrium Green's function formalism with density functional theory. The optimized Janus SSeTe, SeSTe, and TeSeS monolayers in the rectangular phase are shown stable and, respectively, possess 1.54, 1.49, and 1.74 eV indirect bandgaps. Illuminated by linearly polarized light, the PGE photocurrent without bias voltage can be collected in both armchair and zigzag directions. Unlike common Janus 2D materials with C3v symmetry, the photocurrent peak values of Janus XYZ monolayers do not come up with certain polarization angles, while the relations can be fitted by Iph = α sin(2θ) + β cos(2θ) + γ at each photon energy. Meanwhile, the maximum photoresponses of Janus SSeTe, SeSTe, and TeSeS monolayers are 2.02, 3.33, and 4.42 a20/photon, respectively. The relatively large PGE photocurrents and complicated polarization relations result from the lower symmetry of Janus XYZ monolayers. Moreover, the specific polarization angles for maximum photoresponses at each photon energy and the ratio between two transport directions are demonstrated, reflecting the anisotropy. Our results theoretically predict a potential Janus monolayer family for self-powered optoelectronic applications.

We propose a new functionality for diamondoids in nanoelectronics. Based on the nonequilibrium Green's function formalism and density functional theory, we reveal that when attached to gold electrodes, the pentamantane-cumulene molecular junction exhibits large and oscillatory rectification and negative differential resistance (NDR) - depending on the number of carbon atoms in cumulene (Cn). When n is odd rectification is greatly enhanced where the rectification ratio can reach ∼180 and a large negative differential resistance peak current of ∼3 μA. This oscillatory behavior is well rationalised in terms of the occupancy of the carbon 2p states in Cn. Interestingly, different layers of C atoms in the pentamantane molecule have different contributions to transmission. The first and third layers of C atoms in pentamantane have a slight contribution to rectification, and the fifth and sixth layers have a stronger contribution to both rectification and NDR. Thus, our results suggest potential avenues for controlling their functions by chemically manipulating various parts of the diamondoid molecule, thus extending the applications of diamondoids in nanoscale integrated circuits.

Magnetic field- and light-driven spin molecular logic gates: A first-principles study

We have theoretically investigated spin transport properties of one-dimensional ruthenium-cyclopentadienyl sandwich molecules, Run(Cp)n+1, between two gold electrodes. Calculations were performed based on the non-equilibrium Green's function formalism and density functional theory. The results clearly reveal that for n = 1, no spin-polarized behavior is observed due to the fully occupied valence shell of ruthenocene molecule, while for the higher n values, the total magnetic moments increase with increasing size of the cluster and a half metallic behavior has been achieved. This can be attributed to the altered ligand field of π-conjugate systems generated by metal centers. Interestingly, for n values higher than 1, not only do the current-voltage curves exhibit an efficient spin-current generation but also a pronounced negative differential resistance behavior can be detected in the bias region. Our results will be strongly informative for the design and control of high-performance organometallic sandwich molecules based on spin-electronic devices.

Zero-bias transport properties of alkanediisothiocyanate $[\text{-SCN-}{({\text{CH}}_{2})}_{n}\text{-NCS-},\text{ }n=4,6,8]$ molecules anchored to various quasi-one-dimensional Au(111) electrodes are studied by an ab initio method within a standard two-probe methodology based on the density-functional theory and the nonequilibrium Green's functions formalism. We have shown that the high-/low-conductance traces observed in STM break-junction experiments on this molecular species can be clearly related to the difference in the electronic structures between the molecular contacts with different geometric configurations of the near-interface planes of the electrodes. The difference in transport properties of alkanediisothiocyanate single-molecule junctions can be understood in terms of the distribution of the surface states, emerging in the energy gap of the alkanes due to the electrode environment. A general feature of the high-conductance junctions is a number of closely located surface states around the Fermi energy, well coupled to the scattering states of the junctions. These well-coupled states broaden the transmission peaks responsible for conductance, increasing their amplitudes at the Fermi energy, while the sparser distribution of the surface states gives sharper peaks with smaller amplitudes at the Fermi energy, naturally representing the low-conductance junctions. The effects of changing the end groups, junction distance, and electrode cross-section are also investigated and analyzed in terms of changes in the electronic structure of the molecular junctions. A comparison with the available experimental data is also provided.

The effects of surface functionalization on the electronic transport properties of the MXene compound Ti3C2 are studied using density-functional theory in combination with the nonequilibrium Green's function formalism. Fluorinated, oxidized and hydroxylated surfaces are considered and the obtained results are compared with the ones for the pristine MXene. It is found that the surface termination has a considerable impact on the electronic transport in MXene. For example, the fluorinated sample shows the largest transmission, whereas surface oxidation results in a considerable reduction of the electronic transmission. The current in the former sample can be up to 4 times larger for a given bias voltage as compared to the case of bare MXene. The increased transmission originates from the extended electronic states and smaller variations of the electrostatic potential profile. Our findings can be useful in designing MXene-based anode materials for energy storage applications, where enhanced electronic transport will be an asset.

We discuss within the nonequilibrium Green's function formalism the self-consistent Born approximation of the electronic self-energy for concurrent coupling of charge carriers to photons and phonons. The expansion of the charge carrier Green's function is shown to provide a description for a range of physical processes with relevance for the photovoltaic device operation, such as indirect optical transitions, thermally assisted photocarrier escape from quantum wells or phonon-mediated interband transfer in tunnel junctions. The nonequilibrium Green's function picture of these processes is reviewed with focus on the evolution of the system towards the steady state in the convergence of the self-consistency iteration process and on the impact of inelastic scattering on device operation.