Integrated Self-Test Module for Uncorrelated Photon Counting in a Two-Dimensional Array

Single-photon detectors are employed to measure faint light signals with high detection efficiency and time resolution. Silicon photomultipliers (SiPMs) are arrays of Single-photon avalanche diodes (SPADs), each one with its quenching resistor; they are connected in parallel giving a signal proportional to the number of detected photons. They offer the typical advantages of solid-state detectors (e.g. ruggedness, low power consumption, small size), high detection efficiency, good time resolution [1] and very good photon-number resolving capabilities. In FBK we produce SiPMs and SPADs with detection efficiency peaked for blue/ultraviolet light (called NUV technology) [2], or green-red light detection (RGB technology), with different geometries. The former are typically employed in a large number of applications exploiting scintillators [3]. Looking for the maximization of the photo-detection efficiency (PDE), e.g. increasing the fill-factor (FF) of the SiPM cell, noise components such as afterpulsing and optical crosstalk between cells (i.e. the correlated noise) become important issues. Recently, we developed new NUV-SiPMs, with high detection efficiency and with different solutions to reduce the noise of the detectors, both at a technological level [4] and a cell-layout level. Here we show the performance of this new NUV-SiPM, produced at FBK, employing a new silicon substrate, with a reduced minority-carriers lifetime, and new SiPM with trenches between cells and high cell density.

Scientific experiments often demand the detection of very weak light signals at high-speed or to precisely measure the time of arrival of single photons. Arrays of Single-Photon Avalanche Diodes (SPAD) are ideal candidates when high sensitivity is required together with high frame-rate or precise photon-timing resolution. We designed a linear 32x1 SPAD array using a high-voltage CMOS technology able to provide both good SPAD performance and fast electronics. During frame acquisition all pixels work in parallel, each of them being equipped with anything necessary for photon counting. The array architecture is capable of fully parallel operation of all pixels allowing free running acquisition at high frame-rate. With a low-speed 10 MHz clock frequency, one pixel is read out in 100 ns while the whole array is readout in 320 ns, corresponding to a frame-rate of 312.5 kframe/s. The frame-rate can top to 4 Mframe/s with a clock of 128 MHz. The photon timing modality employs the photon time-of-arrival information provided by each of the 32 outputs. All 32 "timing" outputs feed external Time-Correlated Photon Counting boards. The Full-Width at Half- Maximum using very short laser pulses is 55 ps with few kcps counting rate.

A portable and sensitive time-resolved biosensor for capturing very low intensity light emission is a promising avenue to study plant delayed fluorescence. These weak emissions provide insight on plant health and can be useful in plant science as well as in the development of accurate feedback indicators for plant growth and yield in applications of agricultural crop cultivation. A field-based delayed fluorescence device is also desirable to enable monitoring of plant stress response to climate change. Among basic techniques for the detection of rapidly fluctuating low intensity light is photon counting. Despite its vast utility, photon counting techniques often relying on photomultiplier tube (PMT) technology, having restricted use in agricultural and environment measurements of plant stress outside of the laboratory setting, mainly due to the prohibitive cost of the equipment, high voltage nature, and the complexity of its operation. However, recent development of the new generation solid-state silicon photomultiplier (SiPM) single photon avalanche diode array has enabled the availability of high quantum efficiency, easy-to-operate, compact, photon counting systems which are not constrained to sophisticated laboratories, and are accessible owing to their low-cost. In this contribution, we have conceived, fabricated and validated a novel SiPM-based photon counting device with integrated plug-and-play excitation LED, all housed inside a miniaturized sample chamber to record weak delayed fluorescence lifetime response from plant leaves subjected to varying temperature condition and drought stress. Findings from our device show that delayed fluorescence reports on the inactivation to the plant’s photosystem II function in response to unfavorable acute environmental heat and cold shock stress as well as chronic water deprivation. Results from our proof-of-concept miniaturized prototype demonstrate a new, simple and effective photon counting instrument is achieved, one which can be deployed in-field to rapidly and minimally invasively assess plant physiological growth and health based on rapid, ultra-weak delayed fluorescence measurements directly from a plant leaf.

In this paper we present a novel single-photon detector specifically designed for Non-Line-Of-Sight (NLOS) imaging applications within the framework of the DARPA REVEAL program. The instrument is based on a linear 16 × 1 Complementary Metal-Oxide-Semiconductor (CMOS) Single-Photon Avalanche Diode (SPAD) array operated in fast-gated mode by a novel fast-gating Active Quenching Circuit (AQC) array, which enables the detectors with sub-ns transitions thanks to a SPAD-dummy approach. The detector exhibits a timing resolution better than 50 ps (Full Width at Half Maximum - FWHM) at a measurement repetition rate up to 40 MHz, and provides 16 independent outputs compatible with commercial Time-Correlated Single-Photon Counting (TCSPC) instrumentation. The instrument has been experimentally characterized and operated in preliminary NLOS imaging acquisitions where a 40 × 60 cm hidden object is successfully reconstructed by scanning over a grid of 150 × 150 positions.

Single-Photon Avalanche Diodes (SPADs) are an emerging pixel technology able to detect the arrival of single photons. Arrays of SPADs can be used to image a scene in binary frames, indicating whether there has been a photon detection in a pixel during a very short frame exposure (e.g., few microseconds). Like many imaging technologies, SPAD sensors suffer from false photon hits, called Dark Count (DC), which increase the photon count, resulting in abnormally bright pixels, called hot pixels. Correction methods used for common CCD/CMOS sensors, such as dark frame subtraction, are ineffective for SPADs, which have non-linear response in observed counts due to their 1-bit quantization. Thus, we derive an analytical model of the count bias introduced by DC, which is signal-dependent, and provide a pixel-wise, closed-form DC correction algorithm. Remarkably, our correction is optimal in expectation, meaning that on average it removes perfectly the distortion. We validate our method on real SPAD acquisitions and synthetic data, showing that it significantly improves image reconstruction.

A time-gated 4×128 Single Photon Avalanche Diode (SPAD) line array with a 512-channel Time-to-digital converter (TDC) has been designed and fabricated in a 0.35 μm high voltage CMOS technology for pulsed Raman spectroscopy. In Raman spectroscopy the SPAD array can be designed as a line array with a high fill factor because electronics can be designed on either side of the SPAD array. In this paper cross talk measurements of the array have been carried out to investigate the probability of the cross talk between adjacent SPADs in an array with high density. Measurements showed a cross talk probability of 0.11% with a pitch of adjacent SPADs of 32 μm. In addition, the largest probability of the cross talk was measured to occur with a short delay.

We report on the design and characterization of a multipurpose 64 × 32 CMOS single-photon avalanche diode (SPAD) array. The chip is fabricated in a high-voltage 0.35-μm CMOS technology and consists of 2048 pixels, each combining a very low noise (100 cps at 5-V excess bias) 30-μm SPAD, a prompt avalanche sensing circuit, and digital processing electronics. The array not only delivers two-dimensional intensity information through photon counting in either free-running (down to 10-μs integration time) or time-gated mode, but can also perform smart light demodulation with in-pixel background suppression. The latter feature enables phase-resolved imaging for extracting either three-dimensional depth-resolved images or decay lifetime maps, by measuring the phase shift between a modulated excitation light and the reflected photons. Pixel-level memories enable fully parallel processing and global-shutter readout, preventing motion artifacts (e.g., skew, wobble, motion blur) and partial exposure effects. The array is able to acquire very fast optical events at high frame-rate (up to 100 000 fps) and at single-photon level. Low-noise SPADs ensure high dynamic range (up to 110 dB at 100 fps) with peak photon detection efficiency of almost 50% at 410 nm. The SPAD imager provides different operating modes, thus, enabling both time-domain applications, like fluorescence lifetime imaging (FLIM) and fluorescence correlation spectroscopy, as well as frequency-domain FLIM and lock-in 3-D ranging for automotive vision and lidar.

A novel compact analog counter for high density SPAD array imagers

Conventional sensors for hyperspectral imaging are limited by noise when operated in low illumination conditions. Recent advances in single-photon avalanche diode (SPAD) arrays provide image sensors capable of single photon counting imaging. Such devices provides camera systems which can operate under low illumination levels and high frame rates, with fully digital in-pixel processing capabilities. Here, we present a hyperspectral imaging system based on low level illumination of a target scene using nine LEDs, each with different emission wavelengths. The backscattered light is captured by a SPAD camera, which can recover spectral information based on the number of photon counts received for each illumination wavelength.

Developing large arrays of single-photon avalanche diodes (SPADs) with on-chip time-correlated single-photon counting (TCSPC) capabilities continues to be a difficult task due to stringent silicon real estate constraints, high data rates and system complexity. As an alternative to TCSPC, time-gated architectures have been proposed, where the numbers of photons detected within different time gates are used as a replacement to the usual time-resolved luminescence decay. However, because of technological limitations, the minimum gate length implement is on the order of nanoseconds, longer than most fluorophore lifetimes of interest. However, recent FLIM measurements have shown that it is mainly the gate step and rise/fall time, rather than its length, which determine lifetime resolution. In addition, the large number of photons captured by longer gates results in higher SNR. In this paper, we study the effects of using long, overlapping gates on lifetime extraction by phasor analysis, using a recently developed 512×512 time-gated SPAD array. The experiments used Cy3B, Rhodamine 6G and Atto550 dyes as test samples. The gate window length was varied between 11.3 ns and 23 ns while the gate step was varied between 17.86 ps and 3 ns. We validated the results with a standard TCSPC setup and investigated the case of multi-exponential samples through simulations. Results indicate that lifetime extraction is not degraded by the use of longer gates, nor is the ability to resolve multi-exponential decays.

We developed a system for acquiring 3D depth-resolved maps by measuring the Time-of-Flight (TOF) of single photons. It is based on a CMOS 32 × 32 array of Single-Photon Avalanche Diodes (SPADs) and 350 ps resolution Time-to-Digital Converters (TDCs) into each pixel, able to provide photon-counting or photon-timing frames every 10 µs. We show how such a system can be used to scan large scenes in just hundreds of milliseconds. Moreover, we show how to exploit TDC unwarping and refolding for improving signal-to-noise ratio and extending the full-scale depth range. Additionally, we merged 2D and 3D information in a single image, for easing object recognition and tracking.

This paper presents the design of a CMOS time-to-digital converter (TDC) used in a direct time-of-flight laser radar line receiver consisting of an array of single-photon avalanche diodes (SPADs) and 256 TDCs. The TDCs use the Nutt interpolation method, where the start/stop fine interpolators are based on a cyclic converter architecture. The cyclic converters use a delay-line-based time interval amplifier to double the quantization residue after each quantization cycle. The time amplifier, and the entire TDC array, does not need any biasing nor does the TDC results need any post-processing to provide sub-100-ps precision and uniformity across the TDC array, therefore making the design very robust and appealing for large designs where hundreds of TDCs are needed on a single chip. Fabricated in a 0.35μm CMOS technology, a single TDC channel occupies an area of 0.03 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and consumes a power of 1.17 mW @ 100 kHz measurement rate. The TDC has a measurement range of 640 ns, and with a resolution of 15 bits, the LSB is 20 ps. Linearity is ensured by the Nutt interpolation method while the rms single-shot precision of the TDC channel is 72 ps. Thus, when LIDAR applications are considered, the TDC is capable of providing a range of 96 m with a precision of 1 cm without any post-processing or calibration.

We report on a device capable of imaging second-order spatio-temporal correlations g(2)(x, τ) between photons. The imager is based on a monolithic array of single-photon avalanche diodes (SPADs) implemented in CMOS technology and a simple algorithm to treat multiphoton time-of-arrival distributions from different SPAD pairs. It is capable of 80 ps temporal resolution with fluxes as low as 10 photons s−1 at room temperature. An important application might be the local imaging of g(2) as a means of confirming the presence of true Bose–Einstein macroscopic coherence (BEC) of cavity exciton polaritons.

We present a novel structured light technique that uses Single Photon Avalanche Diode (SPAD) arrays to enable 3D scanning at high-frame rates and low-light levels. This technique, called “Single-Photon Structured Light”, works by sensing binary images that indicates the presence or absence of photon arrivals during each exposure; the SPAD array is used in conjunction with a high-speed binary projector, with both devices operated at speeds as high as 20 kHz. The binary images that we acquire are heavily influenced by photon noise and are easily corrupted by ambient sources of light. To address this, we develop novel temporal sequences using error correction codes that are designed to be robust to short-range effects like projector and camera defocus as well as resolution mismatch between the two devices. Our lab prototype is capable of 3D imaging in challenging scenarios involving objects with extremely low albedo or undergoing fast motion, as well as scenes under strong ambient illumination.

Quantum imaging and microscopy profit from entangled photons to surpass the boundaries of classical optics, thus improving image resolution. Thanks to their single-photon sensitivity, readout noise absence, low-voltage operation and high frame-rate, detectors based on Single-Photon Avalanche-Diodes (SPADs) are particularly suited for this application field. We discuss strengths and weaknesses of different SPAD based architectures (classified in SiPMs, SPAD arrays, or SiPM arrays), highlighting those to be exploited as quantum imagers. As just SPAD arrays are capable of spatial resolution at single-SPAD level and, through the possible implementation of quantum-specific on-chip processing, we identified them as the forefront detector type for quantum imaging and microscopy.