With the evolution of semiconducting industries, thermomechanicalfailure induced in a multilayered structure with a high aspect ratioduring manufacturing and operation has become one of the criticalreliability issues. In this work, the effect of thermomechanical stresson the failure of multilayered thin films on Si substrates was studiedusing analytical calculations and various thermomechanical tests.The residual stress induced during material processing was calculatedbased on plate bending theory. The calculations enabled the predictionof the weakest region of failure in the thin films. To verify ourprediction, additional thermomechanical stress was applied to inducecracking and interfacial delamination by various tests. We assumedthat, when accumulated thermomechanical-residual and externally appliedmechanical stress becomes larger than a critical value the thin-filmcracking or interfacial delamination will occur. The test resultsagreed well with the prediction based on the analytical calculationin that the film with maximum tensile residual stress is the mostvulnerable to failure. These results will provide useful analyticaland experimental prediction tools for the failure of multilayeredthin films in the device design stage.