Laser-induced nonlinear optical rectification in a two-dimensional quantum pseudodot system

We make a rigorous exploration of profiles of nonlinear optical rectification (NOR) coefficient of impurity doped quantum dots (QDs) in presence and absence of noise. We have exploited Gaussian white noise in the present study. The quantum dot is doped with Gaussian impurity. Noise has been introduced to the system additively and multiplicatively. A perpendicular magnetic field serves as a confinement source and a static external electric field has been applied. The NOR profiles have been monitored as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, relaxation time, Al concentration, dopant potential, and noise strength assume different values. In addition, the role of mode of application of noise (additive/multiplicative) on the NOR profiles has also been examined thoroughly. The NOR profiles are found to be endowed with interesting observations such as shift of peak position and maximization/minimization of peak intensity. However, presence of noise prominently alters the features of NOR profiles through some interesting manifestations and often induces one photon resonance enhancement. Furthermore, the mode of application of noise (additive/multiplicative) also controls the NOR profiles in disparate as well as often contrasting manners. The observations indicate possibilities of tailoring the NOR coefficient of doped QD systems in presence of noise which bears tremendous technological importance.

In this paper, we calculated the electronic and optical properties of the harmonic oscillator and single and double anharmonic oscillators, including higher-order anharmonic terms such as the quartic and sextic under the non-resonant intense laser field. Calculations are made within the effective mass and parabolic band approximations. We have used the diagonalization method by choosing a wave function based on the trigonometric orthonormal functions to find eigenvalues and eigenfunctions of the electron confined within the harmonic and anharmonic oscillator potentials under the non-resonant intense laser field. A two-level approach in the density matrix expansion is used to calculate the linear and third-order nonlinear optical absorption coefficients. Our results show that the electronic and optical properties of the structures we focus on can be adjusted to obtain a suitable response to specific studies or aims by changing the structural parameters such as width, depth, coupling between the wells, and applied field intensity.

Nonlinear optical properties of morse quantum well modulated by THz laser fields

In this paper, the effects of the intense laser field (ILF) and position dependent mass (PDM) on the electronic structure in a Gaussian quantum well are theoretically deduced by using the diagonalization method for obtaining energy levels and corresponding wave functions. We find that, in the case of narrow PDM distribution, the dependence of the energy levels on the effective length of the electron mass distribution becomes more apparent, and the evolution of the dressed mass with ILF is significant. Given this feature, it is more meaningful to take into consideration the PDM of the electron in the low dimensional semiconductor heterostructures under the ILF.

The effects of the intense laser and magnetic fields on the group velocity of light in GaAs/Al0.3Ga0.7As near-surface quantum well

Investigating the valence-band bound states in GaAs/GaAsSb/GaAs V-shaped quantum wells: The role of intense laser fields and position-dependent effective mass

An intense laser field effect on the intersubband transitions in quantum wells is theoretically investigated within the framework of the effective-mass approximation. Results obtained show that intersubbband optical transitions and energy levels in quantum wells can be significantly modified and controlled by an intense laser field.

Investigation of the nonlinear optical rectification coefficient in a multilayered spherical quantum dot

Simultaneous effects of the intense laser field and the electric field on the nonlinear optical properties in GaAs/GaAlAs quantum well

Nonlinear optical rectification in parabolic quantum dots in the presence of electric and magnetic fields

The effects of intense laser radiation on the exciton states in GaAs‐Ga1–xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton‐related photoluminescence peak, and the carriers overlap integral are presented for several configurations of the quantum well size, the strength of the applied electric fields, and the incident laser radiation.

Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential

The effect of the intense laser field on the electronic states and optical properties of n-type double δ-doped GaAs quantum wells

The nonlinear optical rectification of an ellipsoidal quantum dot with impurity in the presence of an electric field

Simultaneous effects of pressure and laser field on donors in GaAs/Ga 1−xAl xAs quantum wells