LITHOSCALE features accomplish dual exposure and high-resolution patterning

Abstract

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The concept of dual layer pattering as an alternative to POR in interconnect formation has been evaluated on maskless exposure technology. The novel dielectric materials negative tone PBO were used for the concept prove. The process optimization was conducted by varying the exposure and spin coating paraments. The lowest feature size accomplished was even <4 μm proving the two–step structures with FT of the first layer 50% of the dual layer FT. This new concept represents contribution to the improved CoO setup in the advanced packaging processes.