Micro-nano electro mechanical systems for practical applications

In this paper, we report monolithic integration of MEMS (micro electro mechanical systems) actuators and high-voltage driver circuits into a silicon chip. Driver circuits of up to 40 V were prepared on an 8-/spl mu/m-thick SOI (silicon-on-insulator) wafer by the DMOS (double-diffused metal oxide semiconductor) processes, after which MEMS electrostatic actuators were integrated into an identical SOI layer by post-processing using DRIE (deep reactive ion etching). This technique opens up a new way of high-voltage ASIC (application specific integrated circuit) for MEMS designer. As a prototype application model, we have developed microlens optical scanners and other elementary MEMS electrostatic actuators with multi-channel driver circuits.

Micro-electromechanical systems (MEMS) relays should have high current-carrying capability and high device reliability for high-power applications. The current-carrying capability of MEMS relays is mainly limited by the thickness of metal contacts fabricated by micromachining process. Another significant limiting factor is the high contact resistance resulted from the low driving force, which is provided by microactuators. This paper presents a matrix configuration of electrostatically actuated microcantilever relay arrays that are connected in parallel to shunt high currents to individual relay elements. This method allows the matrix to be configured for different power requirements. The proposed novel hollow suspended spring lowers the driving voltage and enhances the device stability considerably because of its low longitudinal stiffness while high lateral stiffness. The average of pull-in voltages is approximately 39.4 V and the overdamped switching-on time is approximately 180 μs when 42 V of driving voltage is applied. Contact resistance of each relay is less than 1 Ω, and the equivalent contact resistance of the 2 × 2 relay arrays is lower than 250 mΩ. Each relay can operate in over 6.5 × 103 hot-switching cycles without failing at a current of 20 mA with 0.3 μm thick Au contacts, thus the 2 × 2 relay arrays can carry four times currents more than one single relay. Therefore, the proposed MEMS relay arrays are suitable for applications in high-power switching systems that require high reliability and stability, such as space applications.

Inertial MEMS (Micro Electro Mechanical System) sensors are normally sealed in hermetic enclosures. Some are assembled in hermetic packages but wafer level packaging has become much more important in recent years. Anodic bonding can be used to achieve wafer level seals between silicon and glass but most suppliers of inertial sensors screen print glass frit onto silicon cap wafers. After removing the organic vehicle, these patterned cap wafers are sealed to the device wafer prior to wafer singulation and plastic packaging. Anodic and glass frit bonding are both cost-effective. However, they impose size, quality and performance limitations. Wafer level sealing with a metal removes some of these limitations but introduces other concerns. This paper will review the current wafer level hermetic processes followed by a description of a thermocompression metal seal technology that is compatible with IC fabrication.

Crank-shaped and Y-shaped through-hole interconnections (THIs) filled with Au-Sn solder are demonstrated in this study. They are expected to realize more high-density Wafer Level Package (WLP) of electrical devices including MEMS (Micro Electro-Mechanical Systems) and MOEMS (Micro Optical Electro-Mechanical Systems) fields, compared with conventional WLP using THIs consist of strait through-holes. In this paper, formation techniques of Crank-shaped and Y-shaped THIs are reported. In order to make Crank-shaped and Y-shaped through-holes in a substrate, both femtosecond laser irradiation and wet chemical etching are used. Crank-shaped through-holes, having 80 μm opening and laterally 600 μm sifted, are successfully formed in silica, PYREX and sapphire substrates. Y-shaped through-holes, 80 μm opening and 400 μm in deep, are also achieved. Gold(Au)-Tin(Sn) solder was filled into the holes by Molten Metal Suction Method (MMSM). Airtightness of the THIs was examined by Helium leakage test and estimated leakage rate was smaller than 1.0×10-9 Pa·m3/sec, which is enough to be used in the WLP applications.

We present an analysis of the electromechanical behavior and stability of a capacitive-based Micro Electro Mechanical Systems (MEMS) device with non-monotonous stiffness-deflection dependence. As an example, we consider a flexible initially curved double clamped micro beam actuated by a distributed electrostatic force. Since the system exhibits both mechanical snap-through buckling and electrostatic pull-in instability, the equilibrium curve has two bifurcation points implying the existence of multiple equilibrium configurations. The multistability phenomenon described in the present work is a result of interaction between mechanical and electrostatic nonlinearities of the system and differs from the electrostatic pull-in based bistability and mechanical bistability associated with the snap-through buckling. The governing equations of the geometrically nonlinear curved Euler-Bernoulli beam are formulated in the framework of the shallow arch approximation. Actuating force is calculated using second order perturbation solution of the Laplace equation for an electric potential. A coupled electro mechanical model is built by the Rayleigh-Ritz method with linear undamped eigenmodes of a straight beam as base functions. After verification of the model results, we analyze the influence of initial geometry of the beam on the location (in terms of actuation voltage and deflections) of the critical points on the bifurcation diagram. It was found that for snap-through to take place, the initial elevation of the beam should be larger than a certain value whereas the existence of electrical pull-in instability is unconditional. In addition, the stable relative deflection of a curved beam is larger than of initially straight beam. Based on the model results, we present an example of a multistable actuator design. Devices of various configurations were fabricated of single crystal silicon using deep reactive ion etching and the existence of multiple stable states and multiple instability points was demonstrated experimentally.

In recent years, precise metrology up to nanoscale has attracted substantial attention due to an increasing need for ultra-precision measurement systems for micro electro mechanical systems (MEMS) and nano electro mechanical systems (NEMS) calibration. In this paper, an analytical and numerical investigation for the proposed design of a 6-degree-of-freedom (6-dof) universal measurement system, using a relatively simple and inexpensive but highly sensitive set up, is presented. This system utilizes a convex mirror and two flat mirrors, one angled and one vertical, as targets to reflect laser beams onto photo detectors. These targets, placed on the object of interest for metrology applications, change the direction of the reflected beam when there is any movement in the object, which is detected by the photo detectors. The use of convex and angled mirrors greatly enhances the sensitivity of the system. Geometric relationships are established among all the optical components to predict the final intersection points of the laser beams reflected from the targets with the photo detector planes. These relationships are used to establish a Jacobian partial derivative matrix, which is further used to estimate the target pose when the photo detector outputs are given. Numerical simulation of the measurement process is performed using MATLAB®. Assuming the approximate distance from laser beam origin to target and the target to photo detector as 50 mm, and photo detector resolution as 0.1 µm, translations and rotations less than 50 nm and 2 arc sec, respectively, can be measured accurately. The highest amount of sensitivity in translation is obtained along the Z-axis with minimum a measurement of 3.4 nm; the highest amount of sensitivity in rotation is along the pitch-axis with a minimum measurement of 0.145 arc sec. The corresponding low sensitivity axes are X-axis and yaw-axis, with minimum measurements of 35 nm and 2 arc sec, respectively. The sensitivity and the resolution of the system can be increased many times further by increasing the curvature of the convex mirror or by increasing the distance between the target and the detectors. The analytical and simulation results of this work yield a scientific and engineering guideline for the development of meso, micro, as well as nanoscale metrology systems.

The emerging fields of silicon (Si) photonic micro–electromechanical systems (MEMS) and optomechanics enable a wide range of novel high-performance photonic devices with ultra-low power consumption, such as integrated optical MEMS phase shifters, tunable couplers, switches, and optomechanical resonators. In contrast to conventional SiO 2 -clad Si photonics, photonic MEMS and optomechanics have suspended and movable parts that need to be protected from environmental influence and contamination during operation. Wafer-level hermetic sealing can be a cost-efficient solution, but Si photonic MEMS that are hermetically sealed inside cavities with optical and electrical feedthroughs have not been demonstrated to date, to our knowledge. Here, we demonstrate wafer-level vacuum sealing of Si photonic MEMS inside cavities with ultra-thin caps featuring optical and electrical feedthroughs that connect the photonic MEMS on the inside to optical grating couplers and electrical bond pads on the outside. We used Si photonic MEMS devices built on foundry wafers from the iSiPP50G Si photonics platform of IMEC, Belgium. Vacuum confinement inside the sealed cavities was confirmed by an observed increase of the cutoff frequency of the electro-mechanical response of the encapsulated photonic MEMS phase shifters, due to reduction of air damping. The sealing caps are extremely thin, have a small footprint, and are compatible with subsequent flip-chip bonding onto interposers or printed circuit boards. Thus, our approach for sealing of integrated Si photonic MEMS clears a significant hurdle for their application in high-performance Si photonic circuits.

Nanoelectromechanical systems (NEMS) are drawing interest from both technical and scientific communities. These are electromechanical systems, much like microelectromechanical systems, mostly operated in their resonant modes with dimensions in the deep submicron. In this size regime, they come with extremely high fundamental resonance frequencies, diminished active masses,and tolerable force constants; the quality (Q) factors of resonance are in the range Q∼103–105—significantly higher than those of electrical resonant circuits. These attributes collectively make NEMS suitable for a multitude of technological applications such as ultrafast sensors, actuators, and signal processing components. Experimentally, NEMS are expected to open up investigations of phonon mediated mechanical processes and of the quantum behavior of mesoscopic mechanical systems. However, there still exist fundamental and technological challenges to NEMS optimization. In this review we shall provide a balanced introduction to NEMS by discussing the prospects and challenges in this rapidly developing field and outline an exciting emerging application, nanoelectromechanical mass detection.

Recently we have developed novel polyimide adhesive sheet materials (PI sheet) which have advantages such as planarization, via-filling, low shrinkage (low stress) during curing and easy fabrication of multi-layer and cavity structures compared to spin-coating polyimide materials. The PI sheets are expected to be used in wafer level package (WLP) applications such as 5G telecommunication systems (5G) and Micro Electro Mechanical Systems (MEMS). To meet 5G and MEMS requirements, we recently have developed novel low-dielectric loss (low Df) and high mechanical properties PI sheets with good adhesion to Cu and polyimide layers on a substrate. We have achieved Df values of 0.003 and 0.007 at 20GHz for non-photosensitive (NP) PI sheet and photo-sensitive (PS) PI sheet, respectively. The use of low Df PI sheet as a redistribution layer can help realize low transmission loss due to low Df value itself and also to low conductor loss due to good adhesion to the smooth copper surface of the wiring.

Wafer Level Packaging (WLP) has started to shine and played a prominent role in recent years in both semiconductor and Integrated Circuit (IC) field, especially in now thriving Micro-Electro-Mechanical System (MEMS) applications on account of its distinctive operating mechanism and adaptive design variety. In this study, several crucial WLP technologies are disclosed in detail, including Wafer to Wafer (W2W) bonding, wafer level wire bonding, wafer level compound molding and lapping. Simplified and conceptual process flow of MEMS WLP and development approaches are introduced and explained. Furthermore, relevant experimental results and technology characteristics, including glass frit printing and bonding results & shear strength in W2W bonding technology, wire shift & vertical loop height & ball shear & wire pull in wafer level wire bonding technology, Thickness to Thickness Variation (TTV) & wire sweep & warpage in wafer level compound molding technology, have also been extensively demonstrated. After MEMS WLP packaging process, device performance is then determined by the difference of voltage readout with the implementation of Wafer Level Dynamic Test (WLDT) before and after Highly Accelerated Stress Test (HAST), and the wafer device yield is also presented.

This paper presents pedagogical issues and experience in teaching the introduction to MEMS (Micro Electro-Mechanical System) course to a group of engineering students, primarily Mechanical Engineering students. The paper draws upon the author’s experience in teaching the MEMS course. Since MEMS is highly inter-disciplinary, the presentation of various relevant topics in MEMS, which may or may not be familiar to a mechanical engineering student, is of critical importance. These topics vary from physics, electrochemistry, materials, and electronic engineering, to various areas in mechanical engineering. An integrated approach for the presentation of subjects, especially in design and fabrication, was found to be very helpful. Moreover, the paradigm shift from the macro world, that most students are familiar and comfortable with, to the micro world is significant and needs to be emphasized. The author found the concept of scaling law, when shifting to the micro world, to be essential in the presentation of MEMS to engineering students in order for them to comprehend the size factor in MEMS. In addition, understanding and appreciation of the strengths and limitations of MEMS are also critical in learning MEMS. Finally, a good textbook will facilitate the learning process of such vast subject. A bibliography of useful textbooks and reference books used by the author will be listed at the end of this paper.

Microelectromechanical systems (MEMS) have played key roles in many important areas, for example transportation, communication, automated manufacturing, environmental monitoring, health care, defense systems, and a wide range of consumer products. MEMS are inherently small, thus offering attractive characteristics such as reduced size, weight, and power dissipation and improved speed and precision compared to their macroscopic counterparts. Integrated circuit (IC) fabrication technology has been the primary enabling technology for MEMS besides a few special etching, bonding and assembly techniques. Microfabrication provides a powerful tool for batch processing and miniaturizing electromechanical devices and systems to a dimensional scale that is not accessible by conventional machining techniques. As IC fabrication technology continues to scale toward deep submicrometer and nanometer feature sizes, a variety of nanoelectromechanical systems (NEMS) can be envisioned in the foreseeable future. Nanoscale mechanical devices and systems integrated with nanoelectronics will open a vast number of new exploratory research areas in science and engineering. NEMS will most likely serve as an enabling technology, merging engineering with the life sciences in ways that are not currently feasible with microscale tools and technologies.

Micro electro mechanical systems (MEMS) have experienced an explosive growth over the past few years driven mainly by its physical properties and its promising technological applications in many different fields, particularly in space and Radio Frequency (RF) systems. MEMS technology exhibits greater advantages over the existing semiconductor switches. In this paper, electro-thermal performances of a two hot arms actuator MEMS switch have been investigated. The switch is designed using CST Microwave Studio. Some mathematical equations have been developed to see the temperature distribution of the hot arms as voltage applied on it. Based on this thermal distribution, the linear thermal expansion of the hot arms and the air gap used in this switch is expressed mathematically. The developed equations have been solved and analyzed using the MATLAB software. This analysis shows that this MEMS switch has a wider range of linear operation and has extremely higher breakdown voltage.

Diversity of application fields and properties of new materials generate new failure mechanisms in Micro electro Mechanical Systems (MEMS). Now if we take into account the lessons from the past in microelectronics, we note that failure analysis played a major rule not only in development time reduction but also in qualification and reliability evaluation Most of the researches which have been done in MEMS reliability are about new material properties and fabrication technologies. Only a few fault detection methods have been introduced for fault detection in MEMS. Some of these methods can be used only for special MEMS. Additionally most of them need a precise model of system. In this paper a new intelligent method is proposed for fault detection in MEMS. In addition some parts of proposed neural network are changed in order to implement it as a BIST mechanism.

MEMS (Micro Electro Mechanical Systems) technology is becoming a crucial enabling technology for optical and RF telecommunication applications due to the performance, cost and integration advantages. All-optical switches and silicon optical benches for optical network systems and RF MEMS components such as RF MEMS switches, tunable capacitors, high Q inductors, and thin film bulk acoustic resonators for miniaturized single chip RF transceivers are discussed. Despite all the promising aspects, practical problems to be addressed for successful commercialization are not trivial. By reviewing optical and RF MEMS research activities and some of the implementation examples, key success factors of MEMS components for the commercialization are discussed.